Low-power AlGaInP red light semiconductor laser with superlattice electron barrier layer and preparation method of low-power AlGaInP red light semiconductor laser

An electronic blocking layer and superlattice technology, applied in the field of optoelectronics, can solve the problems of large light absorption, no stress compensation involved, and low slope efficiency, etc., and achieve the effects of increasing optical gain, reducing heat generation, and improving slope efficiency

Pending Publication Date: 2022-04-22
Shandong Huaguang Optoelectronics Co. Ltd.
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Problems solved by technology

However, the first confinement layer is completely grown alternately with superlattice. In order to reduce the influence of side film absorption on photoelectric conversion efficiency, the first confinement layer needs a certain thickness, so more layers are required, and the number of growth layers in this patent i

Method used

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  • Low-power AlGaInP red light semiconductor laser with superlattice electron barrier layer and preparation method of low-power AlGaInP red light semiconductor laser
  • Low-power AlGaInP red light semiconductor laser with superlattice electron barrier layer and preparation method of low-power AlGaInP red light semiconductor laser

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[0080] Example 1

[0081] Preparation method of a small power AlGaInP red light semiconductor laser having a superlattice electron barrier layer, comprising the following steps:

[0082] S1, place the GaAs substrate in the MOCVD device growth chamber, H 2 Heat up to 720± bake at 10°C and add AsH 3 , the surface heat treatment of gaAs substrates;

[0083] S2, the temperature is slowly reduced to 680± 10 °C, the cooling rate is not higher than 30 °C / min, through TMGa and AsH 3 , a GaAs buffer layer is grown on a GaAs substrate; the doping source of the GaAs buffer layer is Si 2 H 6 The doping concentration of si atoms is 2×10 18 atoms / cm 3 The thickness of the GaAs buffer layer is 0.2 μm.

[0084] S3, keep the temperature at 680± 10 °C, into ph 3 , by aborting access to AsH 3 And TMGa achieved a growth pause in the GaAs buffer layer, stopping for 5 seconds, and depleting the As atoms in the reaction chamber.

[0085] S4, which maintains the temperature at 680± 10 °C, passes into TMG...

Example Embodiment

[0100] Example 2

[0101] Preparation method of a small power AlGaInP red light semiconductor laser having a superlattice electron barrier layer, comprising the following steps:

[0102] S1, place the GaAs substrate in the MOCVD device growth chamber, H 2 Heat up to 720± bake at 10°C and add AsH 3 , the surface heat treatment of gaAs substrates;

[0103] S2, the temperature is slowly reduced to 680± 10 °C, the cooling rate is not higher than 30 °C / min, through TMGa and AsH 3 , a GaAs buffer layer is grown on a GaAs substrate; the doping source of the GaAs buffer layer is Si 2 H 6 The doping concentration of Si atoms is 2.5×10 18 atoms / cm 3 The thickness of the GaAs buffer layer is 0.15 μm.

[0104] S3, keep the temperature at 680± 10 °C, into ph 3 , by aborting access to AsH 3 And TMGa achieves a growth pause of the GaAs buffer layer, a pause of 10 s, and depletes the As atoms in the reaction chamber.

[0105] S4, which maintains the temperature at 680± 10 °C, passes into TMGa, TM...

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Abstract

The invention provides a low-power AlGaInP red light semiconductor laser with a superlattice electron barrier layer and a preparation method of the low-power AlGaInP red light semiconductor laser. The laser sequentially comprises a substrate, a buffer layer, a lower transition layer, an Al < 0.5 > In < 0.5 > P lower limiting layer, a lower waveguide layer, a first quantum well, a barrier layer, a second quantum well, an upper waveguide layer, a superlattice structure-first upper limiting layer, a corrosion stop layer, an Al < 0.5 > In < 0.5 > P second upper limiting layer, an upper transition layer and a cap layer from bottom to top. The laser can effectively inhibit electron overflow, relieve stress of an active region and improve the growth quality of a limiting layer material; meanwhile, a high light limiting factor is achieved, the light gain is improved, and the purposes of reducing the threshold current and improving the slope efficiency are achieved, so that the low-power AlGaInP red light laser has low working current, and heat generation is reduced.

Description

technical field [0001] The invention relates to a low-power AlGaInP red semiconductor laser with a superlattice electron blocking layer and a preparation method thereof, belonging to the field of optoelectronic technology. Background technique [0002] AlGaInP red semiconductor laser has the characteristics of small size, light weight, low power consumption, direct modulation, high efficiency and reliability. It is used in short-distance all-optical network applications in plastic optical fiber transmission and in medical beauty and laser display. And industrial measurement and other fields have broad application prospects. Due to the low output power (generally less than 100mW), low-power lasers are usually battery-driven, which requires high efficiency, low thermal resistance, and low power consumption for the performance of red lasers. [0003] The operating current of a semiconductor laser at constant power depends on the threshold current (I th ) and slope efficiency ...

Claims

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Application Information

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IPC IPC(8): H01S5/34H01S5/343
CPCH01S5/3406H01S5/3407H01S5/3438H01S5/3436
Inventor 王朝旺刘飞张新于军
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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