GaN-based LED (Light-emitting Diode) epitaxial structure and production method thereof
An epitaxial structure and production method technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as the reduction of luminous efficiency, and achieve the effects of facilitating growth, suppressing electron overflow, and reducing the Droop effect
Inactive Publication Date: 2016-04-20
YANGZHOU ZHONGKE SEMICON LIGHTING
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Problems solved by technology
Due to the unbalanced distribution of electrons in the quantum well, the local area in the quantum well overflows the quantum well due to filling electrons with higher and higher potential energy. This phenomenon is more obvious under high current injection, thus leading to high current injection. The luminous efficiency under
Method used
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Embodiment A
[0025] The low-temperature n-type doped AlGaN layer 104 is grown in a single-layer structure, and the Al composition remains constant along the growth direction, and the Al composition is 0.05-0.25.
Embodiment B
[0027] The low-temperature n-type doped AlGaN layer 104 is grown in a single-layer structure, and the Al composition increases linearly along the growth direction, and its Al composition increases linearly from 0.05 to 0.25 along the growth direction.
Embodiment C
[0029] The low-temperature n-type doped AlGaN layer 104 is grown in a single-layer structure, and the Al composition decreases linearly along the growth direction, and its Al composition decreases linearly from 0.25 to 0.05 along the growth direction.
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Abstract
The invention relates to a GaN-based LED (Light-emitting Diode) epitaxial structure and a production method thereof, which relate to the technical field of semiconductor optoelectronics. The epitaxial structure sequentially comprises a substrate, a buffer layer, an unintentionally doped GaN layer, an n type doped GaN layer, a low temperature n type doped AlGaN layer, a multiple quantum well active layer, an electron blocking layer and a p type doped GaN layer from bottom to top. The low temperature n type doped AlGaN layer is located between the n type doped GaN layer and the multiple quantum well active layer, so that the electron overflow under large current can be effectively inhibited, the uniformity of electron and hole distribution in quantum wells is improved, and the radiative recombination rate of electron holes is increased, therefore, the light output power is improved, and the Droop effect is reduced.
Description
technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, in particular to an epitaxial structure of a GaN-based LED and a production method thereof. Background technique [0002] Gallium Nitride (GaN), as the third-generation direct bandgap semiconductor, has broad application prospects in the field of optoelectronic technology. Semiconductor lighting technology with GaN-based light-emitting diodes (LEDs) as the core is an emerging light source technology. It has outstanding advantages such as high brightness, low power consumption, long life, fast start-up, small size, safety and environmental protection, and is called a new generation of green environmental protection. A new type of lighting source, it is expected to replace traditional incandescent and fluorescent lamps, bringing the second revolution in the history of human lighting. [0003] Although GaN-based LED technology has developed rapidly in recent years, and the epi...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L33/06H01L33/12H01L33/00
CPCH01L33/06H01L33/0075H01L33/12H01L2933/0008
Inventor 戴俊闫其昂王明洋李志聪孙一军王国宏
Owner YANGZHOU ZHONGKE SEMICON LIGHTING
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