GaN-based LED (Light-emitting Diode) epitaxial structure and production method thereof

Abstract

The invention relates to a GaN-based LED (Light-emitting Diode) epitaxial structure and a production method thereof, which relate to the technical field of semiconductor optoelectronics. The epitaxial structure sequentially comprises a substrate, a buffer layer, an unintentionally doped GaN layer, an n type doped GaN layer, a low temperature n type doped AlGaN layer, a multiple quantum well active layer, an electron blocking layer and a p type doped GaN layer from bottom to top. The low temperature n type doped AlGaN layer is located between the n type doped GaN layer and the multiple quantum well active layer, so that the electron overflow under large current can be effectively inhibited, the uniformity of electron and hole distribution in quantum wells is improved, and the radiative recombination rate of electron holes is increased, therefore, the light output power is improved, and the Droop effect is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, in particular to an epitaxial structure of a GaN-based LED and a production method thereof. Background technique [0002] Gallium Nitride (GaN), as the third-generation direct bandgap semiconductor, has broad application prospects in the field of optoelectronic technology. Semiconductor lighting technology with GaN-based light-emitting diodes (LEDs) as the core is an emerging light source technology. It has outstanding advantages such as high brightness, low power consumption, long life, fast start-up, small size, safety and environmental protection, and is called a new generation of green environmental protection. A new type of lighting source, it is expected to replace traditional incandescent and fluorescent lamps, bringing the second revolution in the history of human lighting. [0003] Although GaN-based LED technology has developed rapidly in recent years, and the epi...

AI Technical Summary

Problems solved by technology

Due to the unbalanced distribution of electrons in the quantum well, the local area in the quantum well overflows the quantum well due to filling electrons with higher and higher potential energy. This phenomenon is more obvious under high current injection, thus leading to high current injection. The luminous efficiency under

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