5results about How to "Improve slope efficiency" patented technology

This invention discloses an end-face coated crystal optical element for a laser resonator and its fabrication method, belonging to the field of optical element fabrication. It includes an optical crystal, a high-reflectivity film disposed on one end face of the optical crystal, and a partially transmissive film disposed on the other end face. The high-reflectivity film sequentially includes Y-coatings along the end face of the optical crystal outwards. b F3 First Floor, H f O2 first layer, Y b F3 Second Layer, H f O2 second layer...Y b F3, Q layer, H f O2, Q layer. This invention utilizes Y... b 3+ Sensitization improves pump absorption efficiency and through Y b To E r Energy transfer effectively alleviates high-doped E r The self-termination effect in YAG lasers enables high efficiency and high energy output of 2940nm lasers, making them suitable for fields such as medical aesthetics and precision machining.

The invention discloses a semiconductor laser with a lower waveguide layer for suppressing heat fading, which sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer from bottom to top, the waveguide layer under the low oscillation threshold is any one or any combination of an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInGaN superlattice, an InGaN / AlInN superlattice, a GaN / AlGaN superlattice, a GaN / AlInGaN superlattice and a GaN / AlN superlattice, and the thickness of the waveguide layer under the low oscillation threshold is 5-1000 nm. The waveguide side wall scattering loss and quantum well absorption loss of the laser are reduced, the internal light absorption loss of the laser is reduced, heat fading caused by non-radiative recombination is inhibited, the threshold current of the laser is reduced, and the slope efficiency is improved.

The application provides a semiconductor laser element provided with an ion conjugate layer, and relates to the technical field of semiconductor photoelectric devices, and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top; the ion conjugate layer is arranged between the active layer and the upper wave layer and between the active layer and the lower waveguide layer; the ion conjugate layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization, and then regulate the carrier and Fermi level, improve the small rabbit degeneracy of the laser element, reduce the absorption loss of the free carrier, promote the stimulated radiation to exceed the spontaneous radiation, improve the particle inversion of the non-equilibrium carrier in the resonant cavity of the laser element, reduce the lasing threshold, realize the room-temperature continuous oscillation, improve the slope efficiency of the laser element, reduce the valence band step of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

The invention discloses a gallium nitride-based semiconductor laser chip with a low-oscillation-threshold lower waveguide layer, which sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper coating layer from bottom to top, and is characterized in that the lower waveguide layer is the low-oscillation-threshold lower waveguide layer; the waveguide layer under the low oscillation threshold is any one or any combination of InGaN, GaN, InN and AlInGaN; and the deformation potential distribution of the waveguide layer under the low oscillation threshold value has broken line type distribution. According to the invention, the deformation potential of the lower waveguide layer and the active layer of the laser is regulated and controlled, the carrier delocalization of the active layer and the lower waveguide layer is reduced, the electron hole injection and transport uniformity is improved, the population inversion is accelerated, and the threshold current density is reduced.

The utility model discloses a nitride semiconductor laser, which comprises a heat dissipation heat sink and a laser structure, and is characterized in that the laser structure comprises a first type waveguide layer, a quantum well layer and a second type waveguide layer which are stacked in sequence; wherein the first type is a P type, and the second type is an N type; or, the first type is an N type, and the second type is a P type; the doping concentration of the P-type waveguide layer is gradually changed along the growth direction of the device; the nitride semiconductor laser is obtained by growing and stripping on the gallium surface of the gallium nitride substrate. The gallium-based solar cell is obtained by growing and stripping on a gallium surface, thereby being beneficial to heat scattering and improving the high-power output performance of the device; and meanwhile, in cooperation with gradient doping of the P-type waveguide layer, penetration dislocation can be reduced through staged lattice matching.