Method for making semiconductor laser and spot-size converter by double waveguide technology

Abstract

Disclosed a method for utilizing the dual-waveguide technology to manufacture the semiconductor laser and mode spot switch comprises following steps: on the N type indium phosphide substrate, sequentially extending growing the N type indium phosphide breaker, a lower waveguide layer, a space layer, a active region, and a thinner indium phosphide intrinsic layer, wherein, the indium phosphide intrinsic layer can prevent the oxidation of active region; removing the highest indium phosphide intrinsic layer, partly covering the laser with SiO2, and utilizing the wet corrosion process to etch the upper carinate shape of mode spot switch; utilizing the auto-alignment process to etch the lower carinate shape which comprises a lower waveguide layer, a space layer, a second growth P type indium phosphide coating layer, and a high doping P type indium gallium arsenide ohmic electrode contract layer; utilizing the SiO2 to partly cover the mode spot switch and etching the upper and lower carnate shapes again while the upper carinate shape comprises a active region, a P type indium phosphide coating layer and a high doping P type indium gallium arsenide ohmic electrode contract layer; and decreasing the substrate of extended plate to 100 ª–m, and manufacturing P / N electrodes to be scribed into the tube core of 250í‡500ª–m.

Description

technical field

[0001] The invention relates to a method for manufacturing a semiconductor laser and a mode-spot converter by using a novel double-waveguide technology by conventional wet etching and photolithography techniques. Background technique

[0002] Most modules in optical fiber communication systems are composed of III-V compound semiconductor devices. Each semiconductor device must be connected to at least one optical fiber, so the coupling efficiency between the semiconductor optoelectronic device and the optical fiber is very important. For ordinary glass optical fibers, the refractive index difference between the core layer and the cover layer is very small, generally 5×10 -3 the following. Such a waveguide structure is a weakly guided waveguide, and the distribution of its intrinsic light field is quite diffuse, that is, the intrinsic light spot is relatively large, generally with a diameter of about 8-10 μm. In III-V compound semiconductors, if the refract...

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