2 results about "Indium phosphate" patented technology

The invention discloses a mid-infrared laser based on three-device on-chip integration and a preparation method thereof, relates to the crossing field of a semiconductor laser technology and an optical communication technology, and solves the problem that the existing quantum cascade laser QCL technology cannot give consideration to both high modulation rate and high power. An intermediate infrared laser comprises a QCL unit, an EAM unit and an SOA unit which are sequentially arranged on a substrate. The substrate comprises a semi-insulating InP (Indium Phosphate); the QCL unit, the EAM unit and the SOA unit share the same ridge-shaped waveguide structure and grow through epitaxy butt joint. The method provided by the invention is suitable for a mid-infrared band space communication scene with high requirements on the laser modulation rate, the output power and the single-mode stability.