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6 results about "Indium phosphate" patented technology

Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor. It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.

Modified PEO-based composite solid electrolyte, preparation method thereof and solid-state battery

The invention belongs to the technical field of solid-state electrolytes, and particularly discloses a modified PEO-based composite solid-state electrolyte, a preparation method thereof and a solid-state battery. The modified PEO-based composite solid electrolyte comprises the following components: lithium-doped indium gallium phosphate, PEO and a lithium-based electrolyte, wherein the chemical formula of the lithium-doped indium gallium phosphate is InxGa (1-x) PO4: Li, and x is more than or equal to 0.3 and less than or equal to 0.8. The indium gallium phosphate has an amorphous structure and shows excellent lithium ion transmission performance and conductivity; after lithium ions are further embedded into the indium gallium phosphate with the amorphous structure, the lithium ion conductivity of the indium gallium phosphate can be further improved, and more active sites are provided for transmission of the lithium ions; the lithium-doped indium gallium phosphate is added into the PEO-based solid electrolyte as an inorganic filler, so that the mechanical strength, the ion transmission capability and the conductivity of the PEO-based solid electrolyte can be effectively improved.
Owner:GANZHOU NOVA TECH CO LTD

Intermediate infrared laser based on three-device on-chip integration and preparation method thereof

The invention discloses a mid-infrared laser based on three-device on-chip integration and a preparation method thereof, relates to the crossing field of a semiconductor laser technology and an optical communication technology, and solves the problem that the existing quantum cascade laser QCL technology cannot give consideration to both high modulation rate and high power. An intermediate infrared laser comprises a QCL unit, an EAM unit and an SOA unit which are sequentially arranged on a substrate. The substrate comprises a semi-insulating InP (Indium Phosphate); the QCL unit, the EAM unit and the SOA unit share the same ridge-shaped waveguide structure and grow through epitaxy butt joint. The method provided by the invention is suitable for a mid-infrared band space communication scene with high requirements on the laser modulation rate, the output power and the single-mode stability.
Owner:CHANGCHUN UNIV OF SCI & TECH

A calcium indium phosphate fluorescent matrix material and its preparation method and application

The present invention belongs to the field of rare earth luminescent materials, and specifically discloses a calcium indium phosphate matrix material for phosphor, the chemical formula of which is Ca 3.6 In 3.6 (PO4)6. Furthermore, a method for preparing the calcium indium phosphate matrix material and its use in preparing fluorescent materials are also provided. This invention provides a novel calcium indium phosphate compound that can be used as a matrix material for phosphors. When doped with rare earth ions, it exhibits luminescent properties with high thermal stability.
Owner:CENT SOUTH UNIV

Indium phosphide substrate and method for producing the same

The ratio of the integral intensity of elemental indium present as an oxide to the integral intensity of elemental indium present as indium phosphide is a first integral intensity ratio. The ratio of the integral intensity of elemental indium present as metallic indium to the integral intensity of elemental indium present as indium phosphide is a second integral intensity ratio. The ratio of the integral intensity of elemental phosphorus present as an oxide to the integral intensity of elemental phosphorus present as indium phosphide is a third integral intensity ratio. The ratio of the integral intensity of elemental indium to the integral intensity of elemental phosphorus is a fourth integral intensity ratio. The first integral intensity ratio is 1.10 or more and 3.20 or less. The second integral intensity ratio is 0.05 or more and 0.30 or less. The third integral intensity ratio is 2.90 or more and 11.00 or less. The fourth integral intensity ratio is 1.15 or more and 2.00 or less.
Owner:SUMITOMO ELECTRIC INDUSTRIES LTD