A kind of etching solution and etching method for identifying twins on indium phosphide surface
A technology of etching solution and indium phosphide, which is applied in chemical instruments and methods, preparation of test samples, single crystal growth, etc., can solve problems such as inability to identify wafer twins, difficulty in control, and fast corrosion of indium phosphide. Achieve the effects of controllable corrosion speed, easy identification and cost saving
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Embodiment 1
[0028] The flow chart of the etching method for phosphating indium surface twin graphic identification figure 1 Indicated.
[0029] The 4-inch phosphate (INP) wafer having a thickness of 450 to 460 μm was placed in a wafer box (Cassette), and the mass fraction was placed in a mass fraction of 80% alcohol at 10 ° C for 20 min. Wash the Cassette equipped with the wafer in the overflow groove, rinse 30s in a combination of deionized water overflow rinsing with fast rolling water, and then manually flush 30s; after it will be immersed in volume ratio of Cassette equipped with wafers. It is 30% of hydrochloride, 50% acetic acid, 20% hydrogenated water, wherein the hydrochloric acid is 36% to 38% hydrochloric acid, and the hydrogen oxygen is 30% ~ 32% hydrogenated hydrogen, acetic acid is a mass fraction of 99.7% ~ 100. % Of the acetic acid, shake 180s at the corrosion temperature of 10 ° C; then immediately placed the Cassette equipped with the wafer in the overflow tank, rinse with th...
Embodiment 2
[0032] The 4-inch phosphate (INP) wafer having a thickness of 460 to 470 μm was placed in a wafer box (Cassette), and the wafer was placed in a mass fraction of 98% alcohol at 40 ° C for 30 min; The Cassette equipped with the wafer is placed in the overflow groove, rinsing 120s using deionized water overflow, and is bonded to the fast rolling water, and then manually flush 30s; after it will be immersed in the amount of CassetTe equipped with wafers. Among the solution of hydrochloride, 20% of acetic acid, a solution of hydrogen oxygen water, wherein hydrochloric acid is 36% to 38% hydrochloric acid, and the hydrogen oxygen is 30% to 32% of the hydrogenated hydrogen, acetic acid is 99.7% to 100%. Acetic acid, shake 30s at the corrosive liquid temperature at 40 ° C; then immediately placed the Cassette equipped with the wafer in the overflow groove, rinsing 90s in a combination of the fast-rolled water with deionized water overflow, and then Manual flush 60S; submerged 10s in alcoh...
Embodiment 3
[0035] The 4-inch phosphate (INP) wafer having a thickness of 440 to 450 μm was placed in a wafer box (Cassette), and the mass fraction was placed in a mass fraction of 98% alcohol at 20 ° C for 30 min; The Cassette equipped with the wafer is placed in the overflow groove, rinsing 70s by pulling the fast-rolled water by deionized water overflow, and then manually flushing 30s; after the coalescery is immersed in volume ratio. Among the solution of hydrochloric acid, 70% acetic acid, wherein the hydrochloric acid is 36% to 38% hydrochloric acid, and the acetic acid is 99.7% to 100% acetic acid, and the moisture temperature is shaken at a temperature of 20 ° C; then immediately Put the Cassette equipped with a wafer is placed in the overflow trough, flush 80s in a combination of deionized water overflow and fast rolling, and then manually flush 30s; put it in alcohol to soak 4S, then use hot nitrogen To dry, the drying temperature was 45 ° C, the drying time was 70 s. Under the fluo...
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