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A kind of etching solution and etching method for identifying twins on indium phosphide surface

A technology of etching solution and indium phosphide, which is applied in chemical instruments and methods, preparation of test samples, single crystal growth, etc., can solve problems such as inability to identify wafer twins, difficulty in control, and fast corrosion of indium phosphide. Achieve the effects of controllable corrosion speed, easy identification and cost saving

Active Publication Date: 2021-10-26
广东先导微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the corrosion rate of indium phosphide in hydrochloric acid is too fast and difficult to control, it cannot be used for the identification of wafer twins

Method used

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  • A kind of etching solution and etching method for identifying twins on indium phosphide surface
  • A kind of etching solution and etching method for identifying twins on indium phosphide surface
  • A kind of etching solution and etching method for identifying twins on indium phosphide surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The flow chart of the etching method for phosphating indium surface twin graphic identification figure 1 Indicated.

[0029] The 4-inch phosphate (INP) wafer having a thickness of 450 to 460 μm was placed in a wafer box (Cassette), and the mass fraction was placed in a mass fraction of 80% alcohol at 10 ° C for 20 min. Wash the Cassette equipped with the wafer in the overflow groove, rinse 30s in a combination of deionized water overflow rinsing with fast rolling water, and then manually flush 30s; after it will be immersed in volume ratio of Cassette equipped with wafers. It is 30% of hydrochloride, 50% acetic acid, 20% hydrogenated water, wherein the hydrochloric acid is 36% to 38% hydrochloric acid, and the hydrogen oxygen is 30% ~ 32% hydrogenated hydrogen, acetic acid is a mass fraction of 99.7% ~ 100. % Of the acetic acid, shake 180s at the corrosion temperature of 10 ° C; then immediately placed the Cassette equipped with the wafer in the overflow tank, rinse with th...

Embodiment 2

[0032] The 4-inch phosphate (INP) wafer having a thickness of 460 to 470 μm was placed in a wafer box (Cassette), and the wafer was placed in a mass fraction of 98% alcohol at 40 ° C for 30 min; The Cassette equipped with the wafer is placed in the overflow groove, rinsing 120s using deionized water overflow, and is bonded to the fast rolling water, and then manually flush 30s; after it will be immersed in the amount of CassetTe equipped with wafers. Among the solution of hydrochloride, 20% of acetic acid, a solution of hydrogen oxygen water, wherein hydrochloric acid is 36% to 38% hydrochloric acid, and the hydrogen oxygen is 30% to 32% of the hydrogenated hydrogen, acetic acid is 99.7% to 100%. Acetic acid, shake 30s at the corrosive liquid temperature at 40 ° C; then immediately placed the Cassette equipped with the wafer in the overflow groove, rinsing 90s in a combination of the fast-rolled water with deionized water overflow, and then Manual flush 60S; submerged 10s in alcoh...

Embodiment 3

[0035] The 4-inch phosphate (INP) wafer having a thickness of 440 to 450 μm was placed in a wafer box (Cassette), and the mass fraction was placed in a mass fraction of 98% alcohol at 20 ° C for 30 min; The Cassette equipped with the wafer is placed in the overflow groove, rinsing 70s by pulling the fast-rolled water by deionized water overflow, and then manually flushing 30s; after the coalescery is immersed in volume ratio. Among the solution of hydrochloric acid, 70% acetic acid, wherein the hydrochloric acid is 36% to 38% hydrochloric acid, and the acetic acid is 99.7% to 100% acetic acid, and the moisture temperature is shaken at a temperature of 20 ° C; then immediately Put the Cassette equipped with a wafer is placed in the overflow trough, flush 80s in a combination of deionized water overflow and fast rolling, and then manually flush 30s; put it in alcohol to soak 4S, then use hot nitrogen To dry, the drying temperature was 45 ° C, the drying time was 70 s. Under the fluo...

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Abstract

The invention relates to an etching solution and an etching method for identifying twins on the surface of indium phosphide, belonging to the field of semiconductor materials. The corrosion solution used for twin identification on the surface of indium phosphide of the present invention comprises the following components in volume percentage: 30%-70% of hydrochloric acid, 0%-35% of hydrogen peroxide, and 20%-70% of acetic acid. The present invention is used for the etching method of twin identification on the surface of indium phosphide, comprising the following steps: (1) soaking the indium phosphide wafer with alcohol; (2) washing the surface of the indium phosphide wafer with deionized water; (3) phosphiding The indium wafer is soaked in the corrosive solution; (4) the surface of the indium phosphide wafer is rinsed with deionized water, and the indium phosphide wafer is dried; (5) the surface of the indium phosphide wafer is observed under a fluorescent lamp and the distribution of twins is marked. The corrosion solution and the corrosion method of the invention are used for the identification of twin crystals on the indium phosphide surface, and have high stability, good repeatability and controllable corrosion speed.

Description

Technical field [0001] The present invention relates to an etching liquid and a corrosion method for phosphating indium surface twin identification, belonging to the field of semiconductor materials. Background technique [0002] As an important III-V compound semiconductor material, indium phosphide (INP) has many excellent performance, such as: direct transduction type band structure, width width, high photoelectric conversion efficiency, electronic mobility High and strong radiation resistance. Therefore, indium phosphide is widely used in high-frequency microwave devices and circuits, solar cells, optical fiber communications and other fields. [0003] At present, with the development of a device such as a microelectronic and optoelectronics such as phosphide, a higher requirement is presented, whether or not a twin crystal is especially important in phosphatine. Due to the lowest of the stacked layer of phosphate, it is very prone to twins during the production process of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/40G01N1/32
CPCC30B29/40C30B33/10G01N1/32
Inventor 宋向荣严卫东周铁军马金峰刘火阳詹晨晨
Owner 广东先导微电子科技有限公司
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