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Integration method for electric absorption modulation laser and modular spot converter

A mode-spot converter and electro-absorption modulation technology, which is applied to lasers, laser components, semiconductor lasers, etc., to achieve high internal quantum efficiency, reduce growth times, and reduce device costs

Inactive Publication Date: 2010-04-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0016] At present, there have been no reports on monolithic integrated devices of semiconductor DFB lasers, electroabsorption modulators and mode-spot converters in the world.

Method used

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  • Integration method for electric absorption modulation laser and modular spot converter
  • Integration method for electric absorption modulation laser and modular spot converter
  • Integration method for electric absorption modulation laser and modular spot converter

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Embodiment

[0098] see again figure 1 As shown, the present invention relates to an integrated method of an electroabsorption modulated laser and a mode spot converter, comprising the following manufacturing steps:

[0099] (1) The 2-inch n-InP substrate undergoes strict decontamination (heating and boiling with ethanol, trichlorethylene, acetone, and ethanol in sequence) → pickling (soaking in concentrated sulfuric acid for 1 to 2 minutes) → water washing (rinsing with deionized water More than 50 times) → after drying treatment, put it into the growth chamber, the growth temperature is 655°C, the growth pressure is 22mbar, and the graphite boat rotates at 75-80 rpm. Growth rate 0.4~0.7nm / s;

[0100] (2) On the n-type indium phosphide substrate (100) epitaxially grow n-type indium phosphide buffer layer (0.5μm thick), lower waveguide layer (thickness 50nm, bandgap wavelength 1.1μm), 0.2μm phosphide Indium space layer, thin 1.1Q layer (30nm);

[0101] (3) Using PECVD technology to grow...

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Abstract

The invention relates to an integration method of electric adsorption modulation laser and mode speckle converter, which comprises: growing n-type indium phosphate buffer layer on the substrate; corroding the upper 1.1Q layer on the chip, to grow buffer layer; growing silica dioxide protective layer on the whole chip, and corroding the silica dioxide protective layer at two ends of mode speckle converter; pouring low-energy phosphate ion; growing the silica dioxide protective layer again; heating, keeping warm, anneal on the chip; corroding silica dioxide protective layer; using relative lightetching plate to mask the laser and modulator, to form the upper ridge and lower ridge on the converter; growing p-type indium phosphate and indium gallium arsenic phosphate etching stop layer; etching ridge pilot structure; depositing medlin at two sides of laser and modulator; opening the electrode windows of laser and modulator; etching the electrode images on the laser and modulator to splashthe P electrode and remove the P electrode; extending the substrate, and splashing n electrode; slicing the sample to form tubular chip.

Description

technical field [0001] The present invention relates to an integrated method for fabricating an electroabsorption modulated laser and a mode spot converter by means of selective area growth (SAG), quantum well hybridization (QWI) and asymmetric double waveguide (ATG) technologies, using commonly used wet etching and photolithography techniques . Background technique [0002] With the development of modern information society, the high-speed transmission, processing and storage of ultra-large capacity and long-distance information is a key technology. Whether it is the backbone network of long-distance communication, wide area network, or local area network of short-distance communication, access network, short-distance data connection optical switching, etc., a large number of high-performance and low-cost optoelectronic devices are required to support the network functions. The development of monolithically integrated multifunctional photonic devices is the key to reducing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00
Inventor 侯廉平王圩朱洪亮周帆
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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