A method for synthesizing indium phosphide by liquid phosphorus injection

Abstract

The invention relates to a method for synthesizing indium phosphide by liquid phosphorus injection, which belongs to the field of semiconductor technology. The method converts gaseous phosphorus into liquid phosphorus through a condenser, injects liquid phosphorus into indium solution, and prevents Phosphorus gasification makes liquid phosphorus and liquid indium melt instantaneously react, and can synthesize indium phosphide solution at a relatively low temperature, high efficiency, high purity ratio, and large capacity, which is conducive to the growth of phosphorus-rich indium phosphide polycrystalline, easy Growth of indium phosphide single crystals. Including: indium cleaning, phosphorus charging, furnace charging, condenser connection, synthesis, crystal preparation and other steps.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to the preparation of indium phosphide, in particular to a method for synthesizing indium phosphide by using liquid phosphorus and liquid indium. Background technique [0002] Indium phosphide (InP) is a III-V group compound semiconductor material composed of group III element indium (In) and group V element phosphorus (P). It has a very important strategic position in the field of semiconductor materials and is the current optoelectronic Irreplaceable semiconductor materials for devices and microelectronics. Compared with germanium and silicon materials, InP has many advantages: direct transition energy band structure, high electro-optical conversion efficiency; high electron mobility, easy to make semi-insulating materials, suitable for making high-frequency microwave devices and circuits; working temperature High; strong radiation resistance; high conversion efficiency as a ...

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Problems solved by technology

[0005] (1) Horizontal Bridgman method (HB) and horizontal gradient solidification method (HGF): InP materials are synthesized by horizontal Bridgman method (HB) and horizontal gradient solidification method (HGF). In terms of technology, the greater the synthesis amount, the shorter the synthesis time. Generally, it takes about 24 hours to synthesize 1.5KgInP polycrystal with HB / HGF technology, so the contamination of Si is more obvious (its source is the quartz tube wall); the carrier concentration of InP polycrystal provided in the industry is at least 6× 1015cm-3, which has adverse effects on the preparation of high-performance microelectronic devices and optoelectronic devices, and the possibility of "exploding tubes" is also high

No matter what kind of synthetic boat it is, it is very difficult to increase the weight of In, and increasing the diameter of the quartz tube will inevitably require a larger diameter autoclave, and the cost will also increase rapidly

[0006] (2) Phosphorus injection synthesis technology: Phosphorus injection synthesis technology is to inject gasified phosphorus vapor into indium melt to synthesize indium phosphide melt. Since this method relies on the pressure difference between the inside and outside of the quartz phosphorus container to inject phosphorus Steam, once the pressure difference is not properly controlled, it is easy to cause foaming; on the other hand, part of the phosphorus vapor is not absorbed by the indium melt, which affects the synthesis effect on the one hand, and on the other hand, the lost phosphorus vapor volatilizes into the furnace body, feeding the furnace Body cleaning is a big hassle

Synthesis and crystal growth are carried out in a "two-step" method, which greatly increases the possibility of material contamination and increases the cost of material preparation

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