58 results about "Indium(III) chloride" patented technology

The invention relates to an anhydrous indium chloride synthesizing method. The method adopts the following process steps: pre-treatment, vacuum chlorination, sublimation and purification, and formation of a finished anhydrous indium chloride product. According to the method, the high-purity anhydrous indium chloride is synthesized by adopting totally nontoxic agents and raw materials by using vacuum high-temperature chlorination and distilled purification technology; the product has high purity, high yield and no toxicity; by detecting the synthesized high-purity anhydrous indium chloride product, the impurity content is below 5ppm, and the purity reaches above 99.995 percent; and the trace impurity produced in the synthesizing process is blown out in a form of dust and then is hydrolyzedand absorbed under the sealed condition, the liquid enters an indium metal reclaiming link, the process flow avoids toxic agents, and the product is further purified by the unique vacuum sublimation technology.

The invention provides a method for preparing indium oxide nanoparticles of porous structures. The method specifically comprises the following steps: by taking indium chloride and dodecylamine as raw materials, performing a hydrothermal reaction, and performing calcination treatment, thereby obtaining the indium oxide nanoparticles of the porous structures. The method is simple in production process, free of expensive surfactant and relatively low in cost, and the prepared indium oxide can be used as a gas sensitive material, has good gas sensitivity on formaldehyde gases due to the porous structures, and thus has long-term application prospects in formaldehyde gas detection.

The invention discloses a method for preparing copper indium selenium sulfur powder or thin film used in a thin-film solar cell. The method comprises the following steps: firstly copper chloride and indium chloride are dispersed in an organic solvent and subjected to ultrasonic dispersion to obtain dispersion liquid; after being added with sodium sulfide and selenium powder, the dispersion liquid is stirred to be uniform to obtain a mixed solution; then the mixed solution is transferred to a reactor to perform reaction after completion of the constant volume and the sealing, after the reaction is completed, suction filtration is performed, residue is washed by deionized water and anhydrous ethyl alcohol sequentially, then is dried in volume to obtain CuIn (S, Se)2 powder; or the mixed solution is transferred to the reactor, then a glass substrate is added into, liquid phase deposition is performed after the completion of the constant volume and the sealing, the deposited glass substrate is washed by deionized water and anhydrous ethyl alcohol sequentially, and then is dried in volume to obtain CuIn (S, Se)2 thin film. According to the method, adopted devices are simple, the prepared CuIn (S, Se)2 powder or thin film is excellent in performance, and good in stability; the industrial production can be realized; a band gap of the CuIn (S, Se) 2 can be continuously adjustable within the range of 1.21-1.45 eV by controlling the content of an S element.