58 results about "Indium(III) chloride" patented technology

The invention discloses a preparation method and application of a ZnIn2S4-graphene composited photochemical catalyst. The preparation method comprises the following steps of: placing graphite oxide into a reducibility alcohol agent for ultrasonic dispersion; adding zinc sulfate and indium chloride into the reducibility alcohol agent, stirring and dissolving; adding thioacetamide into two systems after the two systems are mixed; transferring the mixed systems into a hydrothermal kettle for a reaction; and after the reaction is finished, carrying out vacuum filtration on the obtained product, washing, vacuumizing and grinding to obtain a nano ZnIn2S4-graphene composited photochemical catalyst. In the invention, grapheme is taken as a supporting material, and a solvothermal synthesis method is adopted to further prepare the nano ZnIn2S4-graphene composited photochemical catalyst. The catalyst prepared by using the method in the invention has the advantages of wide visible light responding range and high photocatalysis activity, can be used for transformation and use of solar energy and comprehensive ecological improvement, such as air purification, sewage disposal, hydrogen production through photodegradation, preparation of alcohol or hydrocarbon chemical fuels and the like by the photocatalysis and reduction of CO2.

The invention discloses a method for synthesizing copper-indium-selenium nanocrystalline and relates to a solar cell material. The invention provides a method for synthesizing copper-indium-selenium nanocrystalline with simple technological steps. The method comprises the following steps: mixing dodecyl mercaptan and oleyl amine to obtain a mixed solvent; adding an elementary substance selenium, and dispersing to obtain an evenly dispersed elementary substance solution; adding cuprous chloride and indium chloride into an oleic acid-octadecylene mixed solvent, heating while stirring, vacuumizing, so that the vacuum degree of the system is lower than -0.1 MPa, and introducing nitrogen to obtain an oleic acid-octadecylene composition of cupric salts and indium salts in the nitrogen atmosphere, wherein the oleic acid-octadecylene composition of cupric salts and indium salts is a light-brown transparent solution; and injecting the prepared selenium solution into the oleic acid-octadecylene composition of cupric salts and indium salts, heating to carry out the reaction, centrifugating to obtain a precipitate, and respectively washing the precipitate with methenyl chloride and ethanol at least once to obtain the copper-indium-selenium nanocrystalline.

The invention provides a preparation method of indium oxide air-sensitive material having loaded gold nanoparticles in a hollow and hierarchical structure.The preparation method concretely comprises following steps: obtaining hollow indium oxide in a hierarchical structure in that indium chloride and L-cysteine as raw material and trisodium citrate as a surface active agent undergo a hydrothermal reaction and are subjected to calcination treatment; and finally obtaining indium oxide air-sensitive material having loaded gold nanoparticles in the hollow and hierarchical structure by using chloroauric acid as raw material, sodium borohydride as a reductant, L-lysine as an additive and loading the surface with precious metal gold nanoparticles. The preparation method of indium oxide air-sensitive material having loaded gold nanoparticles in the hollow and hierarchical structure has a simple production process; and indium oxide air-sensitive material has the hollow and hierarchical structure and is loaded with precious metal gold nanoparticles so that novel air-sensitive material with high sensitivity is acquired.

The invention provides a core shell nanometer crystal of gold and copper-indium-diselenide and a preparation method of the core shell nanometer crystal, and relates to a core shell nanometer material. The core shell nanometer crystal of the gold and copper-indium-diselenide is in a core shell structure, wherein a core is a gold nano particle and a shell layer is a copper-indium-diselenide CuISe2 shell layer. The preparation method comprises the following steps of: mixing triphenylphosphine gold chloride with oleyl amine; heating and vacuumizing; introducing nitrogen gas and raising the temperature to react to obtain an oleyl amine solution of colloid nano gold; adding selenium powder into the oleyl amine; heating and vacuumizing; introducing the nitrogen gas and raising the temperature toreact to obtain the oleyl amine solution of the selenium; adding cuprous chloride and indium chloride into an oleyl amine solvent; heating and vacuumizing; introducing the nitrogen gas and raising the temperature to react to obtain an oleyl amine compound of a copper salt and an indium salt; injecting the oleyl amine solution of the colloid nano gold into the oleyl amine solution of the selenium;keeping heating and agitating to obtain a turbid solution; injecting the turbid solution into the oleyl amine compound of the copper salt and the indium salt; keeping heating to react and centrifuging; and washing sediment with trichloromethane and ethanol at least once to obtain the core shell nanometer crystal of the gold and copper-indium-diselenide.

The invention discloses a preparation method for preparing metallic indium nanometer particle ink, which comprises the following steps: (1) dissolving indium chloride in polyalcohol, and adding stabilizing agents; (2) dissolving sodium-containing reducing agents in a polyalcohol solution to be prepared to a reducing agent solution; (3) fast injecting the reducing agent solution obtained in the second step into the solution prepared in the first step for reaction when the reducing agent solution is still hot, and obtaining metallic indium nanometer particles through centrifugation, washing and drying; and (4) dissolving the metallic indium nanometer particles in a special solvent for preparing the nanometer particle ink. The invention also discloses an application method of the metallic indium nanometer particle ink to the preparation of copper-indium sulfide films. The invention has the advantages of simple reaction, easy implementation of the reaction reaction, low cost, high yield and the like, and prepared films have compact and smooth surfaces, crystal grains have large dimension, and the films do not have obvious impure phases.

The invention relates to an appearance-controllable indium oxide powder and a low-temperature hydrothermal synthesis method thereof and belongs to the technical field of inorganic chemical synthesis. The low-temperature hydrothermal synthesis method comprises the following steps: taking indium nitrate or indium chloride as an indium source, urea as an alkaline source, nitric acid or hydrochloric acid as a hydrolysis inhibitor and polyacrylic acid (PAA) and sodium dodecyl sulfonate (SDS) as a double template agent, and reacting for 8-12 hours under a hydrothermal condition at 80-95 DEG C; performing suction filtration and washing a product, and roasting to obtain In2O3 power. Cubic, flower-shaped, spherical and hollow spherical products formed by primary particles as In2O3 single crystals can be obtained by regulation and control of PAA and SDS consumption; the obtained In2O3 power belongs to a cubic crystal system. The obtained products are made into a side heat type gas sensor element for gas sensitive performance detection; when the working temperature of a device made of the cubic In2O3 power is 100 DEG C, the gas-sensitive property of 100-ppm nitromethane is good, a sensitivity value is higher than 500, the response time is about 1-2 s, and the quick detection on flammable and explosive nitromethane gas at a relatively low temperature can be realized.

The invention discloses a preparation method of a nanometer composite N-doped graphene-ZnIn2S4 material responded by visible light. The preparation method comprises the following steps: placing graphite oxide and urea in a reducing alcohol agent for ultrasonic dispersion, then transferring the graphite oxide and the urea after the ultrasonic dispersion to a hydrothermal reaction kettle for reaction, performing vacuum filtration, washing and vacuum drying on a product so as to obtain N-doped graphene, adding the N-doped graphene to the reducing alcohol agent for the ultrasonic dispersion, adding zinc sulfate and indium chloride to the reducing alcohol agent to be stirred and dissolved, then mixing two kinds of systems, adding thioacetamide, then transferring the mixture of the systems and the thioacetamide to the hydrothermal reaction kettle for reaction, and performing vacuum filtration, washing and vacuum drying on the product so as to obtain nanometer composite N-doped grapene-ZnIn2S4 material. According to the preparation method disclosed by the invention, the N-doped graphene is used as a carrier material, and the nanometer composite N-doped graphene-ZnIn2S4 material is prepared by using a solvent thermal synthesis method in two steps.

The present invention discloses a method for removing arsenic from an acid solution, and relates to the technical field of hydrometallurgy, wherein TiO2 and nH2O can be adopted to carry out absorption removal of trivalent arsenic and pentavalent arsenic from a H2SO4 solution containing 10 mg/L-30 g/L of arsenic and a HCl solution containing 10 mg/L-30 g/L of arsenic, and acidity of an acid solution is 0.5-150 g/L. The adopted removal method can comprises: carrying out nature infiltration through an ion exchange column, carry out vacuum filtration, stirring according to a liquid-solid ratio, and carrying out pressure filtration with a pressure filter, wherein a 10-20% NaOH solution is adopted to wash and regenerate TiO2 absorbing arsenic and nH2O absorbing arsenic, an arsenic absorption effect is not reduced, the alkali washing solution is treated to obtain a sodium arsenate crystal containing more than 50% of arsenic, Zn<2+> and In<3+> are not be absorbed during arsenic removal processes of a zinc sulfate solution and an indium chloride solution, and arsenic and germanium are absorbed in a Ge-containing solution. With the method, arsenic can be effectively recovered, the problem of secondary pollution of arsenic in other methods is solved, and a certain economic value is produced.

The invention relates to the technical field of a functional material, in particular to a method for preparing ITO powder by a spray thermolysis method. Required InCl3.4H2O and SnCl2.2H2O are calculated according to the conversion mixture ratio of m(In2O3):m(SnO2) being 9:1 in the final ITO product; indium chloride and stannous chloride are weighed and are dissolved into deionized water, so that the two kinds of metal salts can be uniformly mixed in the molecular range to be prepared into a precursor solution; in the process, little hydrochloric acid at a proportion of 1:1 is dripped for preventing hydrolysis; the precursor solution is added into an ultrasonic sprayer for spray making; the air is used as carrier gas; atomized liquid drips are introduced into a microwave wave tubular heating furnace; the carrier gas feeds spray drips into a microwave heating cavity to be heated through a catheter; the spray drips are subjected to evaporation, pyrolysis, drying, crystallization and nucleation; finally, thermolysis is performed to produce the ITO powder. The method provided by the invention has the advantages that the ultrasonic wave spraying is used for being combined with the microwave pyrolysis one-step method; the prepared ITO powder has good dispersibility, high purity and small and uniform dimension distribution.

The invention relates to a method for preparing a super-hydrophobic indium antimonide film by deposition in ionic liquid in the field of micro/nano technology. The method comprises the following steps of: putting a substrate into 1-methyl-3-ethylimidazole bis(trifluoromethylsulfonyl)imide salt solution containing indium chloride and antimony chloride and performing electrochemical deposition to obtain a film; and performing surface chemical modification on the film to obtain the super-hydrophobic indium antimonide film. The contact angle of water drops of the deposited indium antimonide film subjected to surface chemical modification is more than 150 degrees, and the rolling angle is less than 20 degrees. The method is simple and practicable and can be suitable for the surfaces of various conductive substrates.

The invention discloses a method for synthesizing indium gallium selenide nanocrystal and a film thereof from a polyalcohol solution. The method comprises the following steps: putting 40ml of triethylene glycol into a three-neck flask, adding 0.45mmol Se powder, and magnetically stirring; adding nitrogen and 25-100mu L of dodecyl mercaptan and 0.1-1.2ml of ethylenediamine solution to obtain an anion precursor solution; putting 10ml of triethylene glycol into the flask, adding indium chloride tetrahydrate and 0.1mmol/mL gallium chloride solution, and performing ultrasonic dissolution to obtain a cation precursor solution; slowly heating the anion solution in the three-neck flask to 220-260 DEG C; quickly injecting the cation precursor solution; keeping the temperature at 200-240 DEG C and performing reflux for 30min; cooling to room temperature to obtain a solution of (In(1-x)Gax)2Se3 nanocrystal; and performing purification and extraction to obtain a solid-state film of indium gallium selenide nanocrystal. According to the method disclosed by the invention, the reaction process is safe and reliable, the cost is low, the method is easy to operate, the product is stable, the stoichiometric ratio of In, Ga and Se is adjustable, and the repeatability is relatively good.

The invention discloses a preparation method of a nano indium phosphate photocatalyst. The preparation method comprises the following steps: dropwise adding an ammonium phosphate solution into an indium chloride solution during stirring at a rotating speed of 200 to 400 r/s, then continuously stirring the solutions at the same rotating speed for 55 to 65 minutes after dropwise adding is completed, thus forming colloid, centrifugally separating the colloid, washing the colloid with distilled water for 3 to 5 times, and drying, thus obtaining the nano indium phosphate photocatalyst. The catalyst is high in dispersivity, high in stability and excellent in photocatalysis performance; the visible photocatalysis efficiency is substantially improved when compared with that of a conventional catalyst such as TiO2.

The invention discloses a preparation method of a halloysite loaded indium phosphate catalyst. The preparation method comprises the following steps: acidizing halloysite, dissolving an aluminum oxide structure of halloysite to be favorable for loading; adding the processed halloysite into an indium chloride solution, adding an ammonium phosphate solution dropwise so as to cover a colloid on the surface of the halloysite, finally centrifuging, separating, washing and drying to obtain the halloysite loaded indium phosphate catalyst. The adsorption action between the uneven surface of the halloysite and an indium phosphate colloid particle is utilized, an indium phosphate nanoparticle is loaded on the surface of the halloysite, and the fixing of the catalyst is promoted.

The invention relates to a method for depositing and preparing a super-hydrophobic indium antimonide thin film, belonging to the field of micro-nano technologies. The method comprises the steps: placing a substrate in 1-methyl-3-ethyl imidazolium bis(trifluoromethyl sulfonyl) imide solution containing indium chloride and antimonic chloride to carry out electrochemical deposition to obtain a thin film, and carrying out surface chemical modification on the thin film to obtain the super-hydrophobic indium antimonide thin film. After surface chemical modification of the indium antimonide thin film obtained by deposition, the contact angle of water drop is more than 150 degrees and the roll angle is smaller than 20 degrees. The method is simple and feasible, and is suitable for various conductive substrate surfaces.

The invention discloses a method for preparing copper indium selenium sulfur powder or thin film used in a thin-film solar cell. The method comprises the following steps: firstly copper chloride and indium chloride are dispersed in an organic solvent and subjected to ultrasonic dispersion to obtain dispersion liquid; after being added with sodium sulfide and selenium powder, the dispersion liquid is stirred to be uniform to obtain a mixed solution; then the mixed solution is transferred to a reactor to perform reaction after completion of the constant volume and the sealing, after the reaction is completed, suction filtration is performed, residue is washed by deionized water and anhydrous ethyl alcohol sequentially, then is dried in volume to obtain CuIn (S, Se)2 powder; or the mixed solution is transferred to the reactor, then a glass substrate is added into, liquid phase deposition is performed after the completion of the constant volume and the sealing, the deposited glass substrate is washed by deionized water and anhydrous ethyl alcohol sequentially, and then is dried in volume to obtain CuIn (S, Se)2 thin film. According to the method, adopted devices are simple, the prepared CuIn (S, Se)2 powder or thin film is excellent in performance, and good in stability; the industrial production can be realized; a band gap of the CuIn (S, Se) 2 can be continuously adjustable within the range of 1.21-1.45 eV by controlling the content of an S element.

The invention provides a preparation method of core-shell InP/ZnS nanorods, comprising: in inert atmosphere, mixing indium chloride or indium oxide, trioctyl phosphine oxide, dodecylamine and tri-n-octylphosphine to obtain mixed liquid, heating and degassing in vacuum, heating in the inert atmosphere to form transparent indium precursor solution; in inert atmosphere, preparing tris(trimethylsilyl)phosphine precursor with tris(trimethylsilyl)phosphine, diphenyl ether and biphenyl; in inert atmosphere, heating the indium precursor solution to 290-320 DEG C, injecting the tris(trimethylsilyl)phosphine precursor into the indium precursor solution, adjusting the temperature to 295-305 DEG C, and reacting to obtain an InP nanorods; in inert atmosphere, injecting zinc fatty acid and 1-dodecanethiol into InP nanorod solution under heating to prepare the core-shell InP/ZnS nanorods.

The invention provides a preparation method of a large-particle-size indium oxide, which comprises the following steps of: respectively flowing an indium chloride solution and an ammonia aqueous solution into a membrane microreactor for coprecipitation reaction, and dripping the obtained seed crystal solution into the indium chloride solution and the ammonia aqueous solution in parallel flow underthe heating condition, so as to obtain a reaction solution; then centrifuging, washing and drying the reaction solution in sequence to obtain a precursor powder, and roasting to obtain the large-particle-size indium oxide. According to the preparation method of a large-particle-size indium oxide, a precipitation method is used for preparing slurry as seed crystal liquid, indium chloride and the ammonia aqueous solution are dripped in parallel subsequently to promote the growth process of particles, the large-particle-size indium oxide particles are prepared through a seed crystal induction method, and the particle size regulation and control range of the indium oxide particles is expanded; Compared with the prior method for greatly improving the roasting temperature to obtain the particles with larger particle size, the preparation method of a large-particle-size indium oxide simplifies the process flow, saves energy, which is more convenient to operate and easy to amplify, and can prepare the indium oxide with the particle size of more than or equal to 30nm at the roasting temperature of 300-500 DEG C.