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Method for depositing and preparing super-hydrophobic indium antimonide thin film from ionic liquid

A technology of superhydrophobicity and ionic liquid is applied in the field of deposition and preparation of superhydrophobic indium antimonide thin films from ionic liquids, which can solve the problems of demand, harsh deposition conditions, strict preparation conditions, etc. performance effect

Inactive Publication Date: 2012-10-10
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantage is that the reaction needs to be carried out in a glove box, the electrodeposition needs to be carried out above 80°C, and the deposition conditions are harsh
Its disadvantage is that the method requires vacuum device and high temperature treatment, the preparation conditions are strict, and the energy consumption is large.

Method used

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  • Method for depositing and preparing super-hydrophobic indium antimonide thin film from ionic liquid
  • Method for depositing and preparing super-hydrophobic indium antimonide thin film from ionic liquid
  • Method for depositing and preparing super-hydrophobic indium antimonide thin film from ionic liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] ① Electrochemical deposition:

[0022] Weigh 0.1383 grams of anhydrous indium chloride and 0.1427 grams of anhydrous antimony chloride, dissolve in 25 milliliters of ionic liquid 1-methyl-3-ethylimidazole bistrifluoromethylsulfonylimide salt, and prepare a concentration of 25mM solution.

[0023] Put the platinum-coated glass substrate into acetone for ultrasonic cleaning, take it out and dry it for use.

[0024] Immerse the cleaned substrate in the above-mentioned ionic liquid solution, use a silver electrode as a reference electrode, and a platinum electrode as an auxiliary electrode, perform electrochemical deposition at a voltage of -1.25V, take it out after 20 hours, and clean it with acetone and deionized water. After drying, a deposited film was obtained.

[0025] ② Chemical modification of film surface:

[0026] The deposited film was immersed in an ethanol solution of 1-decyl phosphoric acid with a concentration of 10 mM, kept for 2 hours, taken out, washed ...

Embodiment 2

[0031] ① Electrochemical deposition:

[0032] Weigh 0.0553 gram of anhydrous indium chloride and 0.0571 gram of anhydrous antimony chloride, dissolve them in 25 milliliters of ionic liquid 1-methyl-3-ethylimidazole bistrifluoromethylsulfonylimide salt, and prepare a concentration of 10mM solution.

[0033] The conductive glass substrate was ultrasonically cleaned in acetone and then taken out to dry for use.

[0034] Immerse the cleaned substrate in the above-mentioned ionic liquid solution, use the silver electrode as the reference electrode, and the platinum electrode as the auxiliary electrode, carry out electrochemical deposition at a voltage of -1.35V, take it out after 6 hours, and wash it with acetone and deionized water. After drying, a deposited film was obtained.

[0035] ② Chemical modification of film surface:

[0036] The deposited film was immersed in an ethanol solution of 1-tetradecylphosphoric acid with a concentration of 10 mM, kept for 2 hours, taken out,...

Embodiment 3

[0038] ① Electrochemical deposition:

[0039] Weigh 0.2766 grams of anhydrous indium chloride and 0.2854 grams of anhydrous antimony chloride, dissolve them in 25 milliliters of ionic liquid 1-methyl-3-ethylimidazole bistrifluoromethylsulfonylimide salt, and prepare a concentration of 50mM solution.

[0040] The copper substrate was ultrasonically cleaned in acetone and then taken out to dry for use.

[0041] The cleaned substrate was immersed in the above-mentioned ionic liquid solution, with a silver electrode as a reference electrode and a platinum electrode as an auxiliary electrode, and electrochemical deposition was carried out at a voltage of -1.45V. After 4 hours, it was taken out and cleaned with acetone and deionized water. After drying, a deposited film was obtained.

[0042] ② Chemical modification of film surface:

[0043] The deposited film was immersed in a n-hexane solution of perfluorooctyltrichlorosilane with a concentration of 2mM, kept for 2 hours, taken...

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Abstract

The invention relates to a method for depositing and preparing a super-hydrophobic indium antimonide thin film, belonging to the field of micro-nano technologies. The method comprises the steps: placing a substrate in 1-methyl-3-ethyl imidazolium bis(trifluoromethyl sulfonyl) imide solution containing indium chloride and antimonic chloride to carry out electrochemical deposition to obtain a thin film, and carrying out surface chemical modification on the thin film to obtain the super-hydrophobic indium antimonide thin film. After surface chemical modification of the indium antimonide thin film obtained by deposition, the contact angle of water drop is more than 150 degrees and the roll angle is smaller than 20 degrees. The method is simple and feasible, and is suitable for various conductive substrate surfaces.

Description

[0001] The invention is based on the patent application number: 201110009738.0, the patent application name is: "Method for preparing superhydrophobic indium antimonide thin film from ionic liquid deposition", the patent applicant is: Shanghai Jiaotong University, and the patent application date is: 2011-01 -18 divisional patent applications. technical field [0002] The invention relates to a method in the field of micro-nano technology, in particular to a method for depositing and preparing a superhydrophobic indium antimonide thin film from an ionic liquid. Background technique [0003] The wettability of a solid surface is usually measured by the contact angle, and a surface with a water contact angle greater than 150° is usually called a superhydrophobic surface. The contact angle of the liquid mainly depends on the surface free energy and microscopic geometric shape of the solid. Since long alkyl chain carboxylic acids, long alkyl chain thiols and fluorosilanes have lo...

Claims

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Application Information

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IPC IPC(8): C25D3/56C25D5/48
Inventor 李梅路庆华
Owner SHANGHAI JIAO TONG UNIV
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