This invention belongs to the field of micro-nano technology and
electron beam
lithography application technology, specifically relating to a
diffraction-based
waveguide electronic beam
exposure method and
system that balances high speed with sub-nanometer writing field stitching errors. The method includes: designing a test pattern based on an AR
waveguide structure and actual task
exposure time; conducting
exposure experiments based on the test pattern, testing and recording the stitching error values at the writing field boundaries and four corner positions, and establishing a stitching error
database under different writing field correction values; obtaining a
coefficient matrix and initial error through polynomial fitting based on the stitching error
database under different writing field correction values; and obtaining correction variables for preset
design values based on the
coefficient matrix and the initial error, and correcting the exposure accordingly. This invention provides an easily implemented
electron beam writing field pre-calibration method that can truly meet the dual requirements of high-precision and high-efficiency exposure in industrial production.