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Method for preparing super-hydrophobic indium antimonide film by deposition in ionic liquid

A super-hydrophobic, ionic liquid technology, applied in the micro-nano field, can solve the problems of demand, harsh deposition conditions, strict preparation conditions, etc., and achieve the effect of simple and easy method and remarkable hydrophobic performance.

Inactive Publication Date: 2011-07-20
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantage is that the reaction needs to be carried out in a glove box, the electrodeposition needs to be carried out above 80°C, and the deposition conditions are harsh
Its disadvantage is that the method requires vacuum device and high temperature treatment, the preparation conditions are strict, and the energy consumption is large.

Method used

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  • Method for preparing super-hydrophobic indium antimonide film by deposition in ionic liquid
  • Method for preparing super-hydrophobic indium antimonide film by deposition in ionic liquid
  • Method for preparing super-hydrophobic indium antimonide film by deposition in ionic liquid

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] ① Electrochemical deposition:

[0021] Weigh 0.1383 grams of anhydrous indium chloride and 0.1427 grams of anhydrous antimony chloride, dissolve in 25 milliliters of ionic liquid 1-methyl-3-ethylimidazole bistrifluoromethylsulfonylimide salt, and prepare a concentration of 25mM solution.

[0022] Put the platinum-coated glass substrate into acetone for ultrasonic cleaning, then take it out and dry it for use.

[0023] Immerse the cleaned substrate in the above-mentioned ionic liquid solution, use a silver electrode as a reference electrode, and a platinum electrode as an auxiliary electrode, perform electrochemical deposition at a voltage of -1.25V, take it out after 20 hours, and clean it with acetone and deionized water. After drying, a deposited film was obtained.

[0024] ② Chemical modification of film surface:

[0025] The deposited film was immersed in an ethanol solution of 1-decyl phosphoric acid with a concentration of 10 mM, kept for 2 hours, taken out, wa...

Embodiment 2

[0030] ① Electrochemical deposition:

[0031] Weigh 0.0553 gram of anhydrous indium chloride and 0.0571 gram of anhydrous antimony chloride, dissolve them in 25 milliliters of ionic liquid 1-methyl-3-ethylimidazole bistrifluoromethylsulfonylimide salt, and prepare a concentration of 10mM solution.

[0032] The conductive glass substrate was ultrasonically cleaned in acetone and then taken out to dry for use.

[0033] Immerse the cleaned substrate in the above-mentioned ionic liquid solution, use the silver electrode as the reference electrode, and the platinum electrode as the auxiliary electrode, carry out electrochemical deposition at a voltage of -1.35V, take it out after 6 hours, and wash it with acetone and deionized water. After drying, a deposited film was obtained.

[0034] ② Chemical modification of film surface:

[0035] The deposited film was immersed in an ethanol solution of 1-tetradecylphosphoric acid with a concentration of 10 mM, kept for 2 hours, taken out,...

Embodiment 3

[0037] ① Electrochemical deposition:

[0038] Weigh 0.2766 grams of anhydrous indium chloride and 0.2854 grams of anhydrous antimony chloride, dissolve them in 25 milliliters of ionic liquid 1-methyl-3-ethylimidazole bistrifluoromethylsulfonylimide salt, and prepare a concentration of 50mM solution.

[0039] The copper substrate was ultrasonically cleaned in acetone and then taken out to dry for use.

[0040] The cleaned substrate was immersed in the above-mentioned ionic liquid solution, with a silver electrode as a reference electrode and a platinum electrode as an auxiliary electrode, and electrochemical deposition was carried out at a voltage of -1.45V. After 4 hours, it was taken out and cleaned with acetone and deionized water. After drying, a deposited film was obtained.

[0041] ② Chemical modification of film surface:

[0042] The deposited film was immersed in a n-hexane solution of perfluorooctyltrichlorosilane with a concentration of 2mM, kept for 2 hours, taken...

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Abstract

The invention relates to a method for preparing a super-hydrophobic indium antimonide film by deposition in ionic liquid in the field of micro / nano technology. The method comprises the following steps of: putting a substrate into 1-methyl-3-ethylimidazole bis(trifluoromethylsulfonyl)imide salt solution containing indium chloride and antimony chloride and performing electrochemical deposition to obtain a film; and performing surface chemical modification on the film to obtain the super-hydrophobic indium antimonide film. The contact angle of water drops of the deposited indium antimonide film subjected to surface chemical modification is more than 150 degrees, and the rolling angle is less than 20 degrees. The method is simple and practicable and can be suitable for the surfaces of various conductive substrates.

Description

technical field [0001] The invention relates to a method in the field of micro-nano technology, in particular to a method for depositing and preparing a superhydrophobic indium antimonide thin film from an ionic liquid. Background technique [0002] The wettability of a solid surface is usually measured by the contact angle, and a surface with a water contact angle greater than 150° is usually called a superhydrophobic surface. The contact angle of the liquid mainly depends on the surface free energy and microscopic geometric shape of the solid. Since long alkyl chain carboxylic acids, long alkyl chain thiols and fluorosilanes have low surface free energy, they are often used to modify micro-nano composite materials. structure, resulting in a superhydrophobic surface that cannot be wetted by water. [0003] Found through literature retrieval to prior art, I-Wen Sun et al. published article " Electrodeposition of Indium Antimonide from the Water-Stable 1-Ethyl-3 -methylimid...

Claims

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Application Information

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IPC IPC(8): C25D3/56C25D5/48
Inventor 李梅路庆华
Owner SHANGHAI JIAO TONG UNIV
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