A preparation method of copper indium sulfide selenide powder or film for thin film solar cells

A technology of solar cells and copper indium sulfide selenide, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as complex heat treatment process and harsh preparation conditions, and achieve improved sunlight utilization rate, low raw material cost, and simple equipment Effect

Active Publication Date: 2016-08-10
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention prepares CuIn(S, Se) for the non-vacuum process in the prior art 2 The method of thin film has defects such as harsh preparation conditions and complicated heat treatment process. The purpose is to provide a non-vacuum preparation of CuIn(S,Se) 2 The method of film or powder, the method adopts simple equipment, cheap raw materials, low production cost, simple process flow, no pollution, easy to realize industrial production; the prepared CuIn(S,Se) 2 The film or powder has good light absorption properties, and the light absorption band can be changed by adjusting the amount of S element; especially the prepared CuIn(S,Se) 2 The surface of the film is regular, the film has good adhesion, is not easy to fall off, and has good stability

Method used

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  • A preparation method of copper indium sulfide selenide powder or film for thin film solar cells
  • A preparation method of copper indium sulfide selenide powder or film for thin film solar cells
  • A preparation method of copper indium sulfide selenide powder or film for thin film solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Weighing: Weigh 0.8805g InCl on an electronic analytical balance (reading accuracy 0.1mg) 3 ·4H 2 O, 0.5115g CuCl 2 ·2H 2 O, and transfer it to a beaker containing 30mL ethanolamine, and cover it with plastic wrap.

[0039] Dispersion: Put the beaker into the ultrasonic dispersing machine, and disperse for about 30min under the ultrasonic power of 300W to obtain the dispersion.

[0040] Constant volume: Weigh 0.2880g Na on an electronic analytical balance 2 S·9H 2 O, 0.3792g Se powder was added to the dispersion, and stirred uniformly to obtain a mixed solution; the dispersed mixed solution was transferred to a 100mL reactor and the volume was adjusted to about 80% of the reactor volume with ethanolamine.

[0041] Heat treatment: After capping the reaction kettle, screw it tightly and place it in a thermostat for reaction at 180℃ for 15h.

[0042] Filtration and washing: After the furnace is cooled to room temperature, the reaction product is vacuum-filtered and washed several t...

Embodiment 2

[0045] Weighing: Weigh 0.8805g InCl on an electronic analytical balance 3 ·4H 2 O, 0.5115g CuCl 2 ·2H 2 O, transfer it to a beaker containing about 30mL ethanolamine, and cover it with plastic wrap.

[0046] Dispersion: Put the beaker into the ultrasonic dispersing machine, and disperse for about 30min under the ultrasonic power of 300W to obtain the dispersion.

[0047] Constant volume: Weigh 0.7200g Na on an electronic analytical balance 2 S·9H 2 O. 0.2370g of Se powder was added to the dispersion and stirred evenly to obtain a mixed solution; the mixed solution after dispersion was transferred to a 100mL reactor and the volume was adjusted to about 80% of the reactor volume with ethanolamine.

[0048] Heat treatment: After capping the reaction kettle, screw it tightly and place it in a thermostat for reaction at 180℃ for 15h.

[0049] Filtration and washing: After the furnace is cooled to room temperature, the product is vacuum-filtered and washed several times with deionized water ...

Embodiment 3

[0052] Weighing: Weigh 0.8805g InCl on an electronic analytical balance 3 ·4H 2 O, 0.5115g CuCl 2 ·2H 2 O, and transfer it to a beaker containing 30 mL of ethylenediamine, and cover it with plastic wrap.

[0053] Dispersion: Put the beaker into the ultrasonic dispersing machine, and disperse for about 30min under the ultrasonic power of 300W to obtain the dispersion.

[0054] Constant volume: Weigh 1.1520g Na on the electronic analytical balance 2 S·9H 2 O, 0.0948g Se powder was added to the dispersion and stirred evenly to obtain a mixed solution; the dispersed mixed solution was transferred to a 100mL reactor, and at the same time, a 25mm×75mm ITO transparent conductive glass substrate was added, and the volume was filled with ethanolamine to the reactor. About 80% of the volume.

[0055] High-temperature deposition: cover the reactor tightly and seal it, put it in a thermostat for 15h at 180℃.

[0056] Filtration and washing: After the furnace is cooled to room temperature, the gla...

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Abstract

The invention discloses a method for preparing copper indium selenium sulfur powder or thin film used in a thin-film solar cell. The method comprises the following steps: firstly copper chloride and indium chloride are dispersed in an organic solvent and subjected to ultrasonic dispersion to obtain dispersion liquid; after being added with sodium sulfide and selenium powder, the dispersion liquid is stirred to be uniform to obtain a mixed solution; then the mixed solution is transferred to a reactor to perform reaction after completion of the constant volume and the sealing, after the reaction is completed, suction filtration is performed, residue is washed by deionized water and anhydrous ethyl alcohol sequentially, then is dried in volume to obtain CuIn (S, Se)2 powder; or the mixed solution is transferred to the reactor, then a glass substrate is added into, liquid phase deposition is performed after the completion of the constant volume and the sealing, the deposited glass substrate is washed by deionized water and anhydrous ethyl alcohol sequentially, and then is dried in volume to obtain CuIn (S, Se)2 thin film. According to the method, adopted devices are simple, the prepared CuIn (S, Se)2 powder or thin film is excellent in performance, and good in stability; the industrial production can be realized; a band gap of the CuIn (S, Se) 2 can be continuously adjustable within the range of 1.21-1.45 eV by controlling the content of an S element.

Description

Technical field [0001] The invention relates to a preparation method of copper indium sulfur selenium powder or thin film for thin film solar cells, and belongs to the field of photoelectric functional materials. Background technique [0002] Energy is the driving force of social development, and the innovation of energy technology is driving the progress of human society. Solar energy is considered to be one of the most potential energy sources in the future, and the use of solar energy is mainly to use solar energy to generate electricity. At present, solar cells have developed to the second generation-thin film solar cells. Among them, copper indium selenide (CIS, CIGS, CISSe, etc.) thin film solar cells have high light absorption coefficient, good photoelectric conversion efficiency, stable performance, and no light. It has advantages such as attenuation phenomenon, good low-light power generation performance, and strong resistance to radiation, which are favored by scientif...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 段学臣段文杰李历历朱奕漪蒋波刘梓琪
Owner CENT SOUTH UNIV
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