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Method for preparing copper indium selenium sulfur powder or thin film used in thin-film solar cell

A technology for solar cells and copper indium sulfide selenium, which is applied to circuits, electrical components, semiconductor devices, etc., can solve the problems of complex heat treatment process and harsh preparation conditions, and achieves improved utilization of sunlight, low cost of raw materials, and short process flow. Effect

Active Publication Date: 2013-10-02
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention prepares CuIn(S, Se) for the non-vacuum process in the prior art 2 The method of thin film has defects such as harsh preparation conditions and complicated heat treatment process. The purpose is to provide a non-vacuum preparation of CuIn(S,Se) 2 The method of film or powder, the method adopts simple equipment, cheap raw materials, low production cost, simple process flow, no pollution, easy to realize industrial production; the prepared CuIn(S,Se) 2 The film or powder has good light absorption properties, and the light absorption band can be changed by adjusting the amount of S element; especially the prepared CuIn(S,Se) 2 The surface of the film is regular, the film has good adhesion, is not easy to fall off, and has good stability

Method used

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  • Method for preparing copper indium selenium sulfur powder or thin film used in thin-film solar cell
  • Method for preparing copper indium selenium sulfur powder or thin film used in thin-film solar cell
  • Method for preparing copper indium selenium sulfur powder or thin film used in thin-film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Weighing: Weigh 0.8805g InCl on an electronic analytical balance (reading accuracy 0.1mg) 3 4H 2 O, 0.5115g CuCl 2 2H 2 O, and transferred it to a beaker containing 30 mL of ethanolamine and covered it with plastic wrap.

[0039] Dispersion: put the beaker into an ultrasonic disperser, and disperse for about 30 minutes under an ultrasonic power of 300W to obtain a dispersion.

[0040]Constant volume: weigh 0.2880g Na on the electronic analytical balance 2 S·9H 2 O. Add 0.3792g of Se powder into the dispersion liquid, stir evenly to obtain a mixed liquid; transfer the dispersed mixed liquid into a 100mL reactor and use ethanolamine to set the volume to about 80% of the reactor volume.

[0041] Heat treatment: cover the reaction kettle, tighten it and seal it, put it in a constant temperature box and react at 180°C for 15h.

[0042] Suction filtration and washing: After cooling to room temperature with the furnace, the reaction product was vacuum filtered and washed...

Embodiment 2

[0045] Weighing: Weigh 0.8805g InCl on an electronic analytical balance 3 4H 2 O, 0.5115g CuCl 2 2H 2 O, transfer it to a beaker with about 30 mL of ethanolamine and cover it with plastic wrap.

[0046] Dispersion: put the beaker into an ultrasonic disperser, and disperse for about 30 minutes under an ultrasonic power of 300W to obtain a dispersion.

[0047] Constant volume: weigh 0.7200g Na on the electronic analytical balance 2 S·9H 2 O. Add 0.2370g of Se powder into the dispersion liquid, stir evenly to obtain a mixed liquid; transfer the dispersed mixed liquid into a 100mL reactor and use ethanolamine to set the volume to about 80% of the reactor volume.

[0048] Heat treatment: cover the reaction kettle, tighten it and seal it, put it in a constant temperature box and react at 180°C for 15 hours.

[0049] Suction filtration and washing: After cooling to room temperature with the furnace, the product was successively vacuum-suctioned and washed several times with dei...

Embodiment 3

[0052] Weighing: Weigh 0.8805g InCl on an electronic analytical balance 3 4H 2 O, 0.5115g CuCl 2 2H 2 O, and transfer it to a beaker containing 30 mL of ethylenediamine, and cover it with plastic wrap.

[0053] Dispersion: Put the beaker into an ultrasonic disperser, and disperse for about 30 minutes under an ultrasonic power of 300W to obtain a dispersion.

[0054] Constant volume: weigh 1.1520g Na on the electronic analytical balance 2 S·9H 2 O. Add 0.0948g of Se powder into the dispersion liquid, stir evenly to obtain a mixed liquid; transfer the dispersed mixed liquid into a 100mL reaction kettle, add an ITO transparent conductive glass substrate with a specification of 25mm×75mm at the same time, and use ethanolamine to fix the volume to the reaction kettle About 80% of the volume.

[0055] High-temperature deposition: cover the reaction kettle, tighten it and seal it, put it in a constant temperature box and deposit at a constant temperature of 180°C for 15 hours. ...

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Abstract

The invention discloses a method for preparing copper indium selenium sulfur powder or thin film used in a thin-film solar cell. The method comprises the following steps: firstly copper chloride and indium chloride are dispersed in an organic solvent and subjected to ultrasonic dispersion to obtain dispersion liquid; after being added with sodium sulfide and selenium powder, the dispersion liquid is stirred to be uniform to obtain a mixed solution; then the mixed solution is transferred to a reactor to perform reaction after completion of the constant volume and the sealing, after the reaction is completed, suction filtration is performed, residue is washed by deionized water and anhydrous ethyl alcohol sequentially, then is dried in volume to obtain CuIn (S, Se)2 powder; or the mixed solution is transferred to the reactor, then a glass substrate is added into, liquid phase deposition is performed after the completion of the constant volume and the sealing, the deposited glass substrate is washed by deionized water and anhydrous ethyl alcohol sequentially, and then is dried in volume to obtain CuIn (S, Se)2 thin film. According to the method, adopted devices are simple, the prepared CuIn (S, Se)2 powder or thin film is excellent in performance, and good in stability; the industrial production can be realized; a band gap of the CuIn (S, Se) 2 can be continuously adjustable within the range of 1.21-1.45 eV by controlling the content of an S element.

Description

technical field [0001] The invention relates to a method for preparing copper indium sulfide selenium powder or film used for thin film solar cells, belonging to the field of photoelectric functional materials. Background technique [0002] Energy is the driving force of social development, and the innovation of energy technology drives the progress of human society. Solar energy is considered to be one of the most potential energy sources in the future, and the utilization of solar energy mainly uses solar energy to generate electricity. At present, solar cells have been developed to the second generation - thin-film solar cells, among which copper indium selenide (CIS, CIGS, CISSe, etc.) thin-film solar cells have high light absorption coefficient, good photoelectric conversion efficiency, stable performance, no light Attenuation phenomenon, low-light power generation performance, strong radiation resistance and other advantages are favored by scientific research institut...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 段学臣段文杰李历历朱奕漪蒋波刘梓琪
Owner CENT SOUTH UNIV
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