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Method and device for extracting metal indium in LCD by virtue of chloridizing volatilization with PVC as a chloridizing agent

A technology of chlorination volatilization and chlorination agent, applied in the direction of improvement of process efficiency, etc., can solve the problem of being unable to get rid of heat treatment, etc., and achieve the effect of ingenious design, simple process method and low operating cost

Active Publication Date: 2015-09-16
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As a widely used engineering plastic, PVC contains nearly 60% chlorine in its monomer, and it is easy to produce dioxins when heated, but the end of PVC life cycle cannot get rid of heat treatment.

Method used

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  • Method and device for extracting metal indium in LCD by virtue of chloridizing volatilization with PVC as a chloridizing agent

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 1.25g of PVC powder was loaded into the first quartz reactor 8 of the first electric furnace 5, and 100g of desiliconized LCD glass substrate powder was loaded into the second quartz reactor 10 of the second electric furnace 7. At this time, Cl:In (molar ratio) was 11:1. Fill the second group of scrubbing bottles 12 with 1 mol / L sodium hydroxide solution. Feed N at a rate of 0.1L / min 2 After 5 minutes, the temperature of the second electric furnace 7 is first raised to 500°C. After the temperature stabilizes, the first electric furnace 5 begins to heat up to 400°C. From the first electric furnace 5 heating up, start timing 30min and the reaction finishes. The indium chloride produced by the reaction will volatilize and condense into the lower end of the second quartz reactor 10 and the quartz wool 11 . At this moment, the mass of recovered indium chloride was 0.46g, and the recovery rate of In was 97.50%.

Embodiment 2

[0022] 1.02g of PVC powder was loaded into the first quartz reactor 8 of the first electric furnace 5, and 100g of desiliconized LCD glass substrate powder was loaded into the second quartz reactor 10 of the second electric furnace 7. At this time, Cl:In (molar ratio) is 9:1. Fill the second group of scrubbing bottles 12 with 1 mol / L sodium hydroxide solution. Feed N at a rate of 0.1L / min 2 After 5 minutes, the temperature of the second electric furnace 7 is first raised to 500°C. After the temperature stabilizes, the first electric furnace 5 begins to heat up to 400°C. From the first electric furnace 5 heating up, start timing 30min and the reaction finishes. The indium chloride produced by the reaction will volatilize and condense into the lower end of the second quartz reactor 10 and the quartz wool 11 . Through detection and calculation, the mass of recovered indium chloride at this time is 0.36g, and the recovery rate of In is 74.20%.

Embodiment 3

[0024] 1.25g of PVC powder was loaded into the first quartz reactor 8 of the first electric furnace 5, and 100g of desiliconized LCD glass substrate powder was loaded into the second quartz reactor 10 of the second electric furnace 7. At this time, Cl:In (molar ratio) was 11:1. Fill the second group of scrubbing bottles 12 with 1 mol / L sodium hydroxide solution. Feed N at a rate of 0.1L / min 2 After 5 minutes, the temperature of the second electric furnace 7 is first raised to 600°C. After the temperature stabilizes, the first electric furnace 5 begins to heat up to 300°C. From the first electric furnace 5 heating up, start timing 30min and the reaction finishes. The indium chloride produced by the reaction will volatilize and condense into the lower end of the second quartz reactor 10 and the quartz wool 11 . At this time, the quality of indium chloride recovered was 0.38g, and the recovery rate of In was 80.54%.

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Abstract

The invention discloses a method and a device for extracting metal indium in LCD by virtue of chloridizing volatilization with PVC as a chloridizing agent. The method comprises the steps of (1) putting PVC powder into the first quartz reactor of a first electric furnace and putting desiliconized LCD glass substrate powder into the second quartz reactor of a second electric furnace, (2) introducing N2, firstly increasing the temperature of the second electric furnace to the range of 500+ / -100 DEG C, after the temperature is stable, starting increasing the temperature of the first electric furnace to the range of 400+ / -100 DEG C, next, continuing reacting for 20-40 minutes, volatilizing and condensing the indium chloride generated through the reaction to the lower end of the second quartz reactor, and trapping and collecting silica wool. The method is capable of realizing the recovery of the indium from the LCD glass substrate powder; as a result, a new way for effectively treating the waste LCD and the PVC can be developed.

Description

technical field [0001] The invention relates to a method and a device for recycling metal indium in waste LCDs, and belongs to the technical field of metal recycling and utilization. Background technique [0002] With its excellent physical and chemical properties, acid resistance, wear resistance and self-lubricating properties, indium is widely used in high-tech fields such as national defense and military, aerospace, and optoelectronic information. At present, chemical methods are mainly used to extract the by-products such as smelting dust and slag with extremely low content of associated minerals (one is the iron removal process of hot acid leaching of vitriol, and the other is the process of iron removal of goethite by hot acid leaching). Complicated and expensive. In addition, indium trichloride (InCl 3 ) is the basic raw material for the production of ITO thin films and III-V semiconductor materials and the synthesis of organic indium series compounds. About 75% of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B7/00C22B58/00
CPCY02P10/20
Inventor 关杰王帅任浩华袁昊郭耀广高桂兰苏瑞景梁波周媛吉杰
Owner SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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