9 results about "Indium(III) hydroxide" patented technology

The present invention relates to the technical field of target manufacturing and provides a MOS target, a method for manufacturing the same, and a thin-film transistor. The manufacturing method includes the steps of: co-precipitating a mixed salt solution of three types of ions, In, Ga, and Sn, a precipitating agent, and a complexing agent, washing and concentrating the mixture to obtain high-purity indium gallium tin hydroxide colloid; hydrothermally reacting the high-purity indium gallium tin hydroxide colloid with an auxiliary agent, washing and drying the mixture to obtain first indium gallium tin oxide powder; performing a calcination treatment on the first indium gallium tin oxide powder to obtain second indium gallium tin oxide powder; ball-milling the second indium gallium tin oxide powder, a dispersant, an antifoaming agent, and pure water to obtain a slurry; casting the slurry to obtain a molded body; and sintering the molded body under high-oxygen conditions to obtain a MOS target. This invention combines coprecipitation, hydrothermal reaction, and calcination to precisely control the oxygen content of the powder, resulting in slight deoxygenation. This prevents the deoxygenation of In2O3 during the sintering process of the molded body, which would otherwise affect the conductivity of the target by generating In2O or InO.

A composition of an indium oxide catalyst including an alkali metal dopant and a method for producing an indium oxide catalyst including an alkali metal dopant. The alkali metal dopant can include Li + , Na + , K + , Rb + , Cs + , and Fr + cations. The method for producing an indium oxide catalyst including an alkali metal dopant includes mixing a solution of an indium salt with a base to form precipitated indium hydroxide (100), contacting the precipitated indium hydroxide with a solution including an alkali metal salt to produce an indium hydroxide solution (102), and calcining the indium hydroxide solution to form indium oxide; thereby forming an indium oxide catalyst including an alkali metal dopant (104).

This invention relates to the field of trace gas leak detection, specifically to a highly sensitive and fast-response hydrogen sensor based on palladium single-atom doping, its preparation method, and its application. The method includes the following steps: preparing indium hydroxide material using indium ions, anhydrous ethanol, ammonia, and deionized water; then doping palladium ions into the indium hydroxide solution to obtain a palladium ion-doped indium hydroxide solution; reducing the solution with sodium borohydride; centrifuging to obtain palladium cluster-doped indium hydroxide material; subsequently calcining the palladium cluster-doped indium hydroxide composite material at high temperature to obtain a palladium single-atom-doped indium oxide composite material; and finally transferring the palladium single-atom-doped indium oxide onto an electrode substrate surface to obtain the hydrogen sensor. This invention, through improvements to key processes, effectively solves the problems of poor selectivity in pure indium oxide gas sensors and slow response speed in palladium nanoparticle-doped hydrogen sensors, achieving rapid and highly sensitive trace detection of hydrogen.

The application provides application of a high-dispersion metal-oxide M-In2O3 bifunctional catalyst in a reaction of selective hydrogenation of 4,6-dinitroresorcinol into 4,6-diaminoresorcinol, and the catalyst is prepared by the following method: (1) preparing an indium precursor solution, then obtaining an indium hydroxide mixed solution by a precipitation method, and preparing a carrier In2O3 through filtration, washing, drying, calcination and reduction; (2) dispersing the carrier In2O3 in anhydrous ethanol, then depositing metal atoms M on the carrier In2O3 by using an atomic layer deposition technology (ALD), and obtaining the M-In2O3 bifunctional catalyst. The high-dispersion metal-oxide M-In2O3 bifunctional catalyst has higher 4,6-diaminoresorcinol selectivity, higher atomic utilization rate and higher catalytic activity.

The invention relates to an indium hydroxide photocatalyst containing hydroxyl vacancy and a preparation method and application thereof, and the preparation method of the catalyst comprises the following steps: (1) preparing a clear sodium oleate aqueous solution by using deionized water, slowly adding a compound containing In < 3 + > into the clear sodium oleate aqueous solution to obtain a mixed solution with floccules, and then adjusting the pH value of the mixed solution to 3-6; and (2) carrying out hydrothermal reaction on the mixed solution obtained in the step (1), centrifuging, washing and drying to obtain the indium hydroxide containing the hydroxyl vacancy. The catalyst disclosed by the invention has a relatively wide light absorption range, the CO2 reduction capacity of the catalyst under a xenon lamp is greatly improved, the catalyst shows excellent selectivity of reducing CO2 into ethanol, and meanwhile, the photocatalyst has low resistivity, rapid carrier transfer capacity, high photon-generated carrier separation capacity and low carrier recombination rate; the good CO2 reduction cycle stability is realized, and the like.

The invention discloses a method for plating indium on the surface of a copper back plate for recycling a target material. The method comprises the following steps: adjusting the pH value of a sodium chloride solution to 1-3.5 by using an acid solution to obtain an electrolyte; an inert cathode plate is used as a cathode, and a copper back plate is used as an anode; and controlling the electrolytic voltage to be 0.1-5V, carrying out an electrolytic reaction to obtain an indium-containing electrolyte and an indium layer deposited on the surface of the inert cathode plate, and finally recovering indium in the indium-containing electrolyte and the indium layer to obtain an indium hydroxide precipitate. By means of low-voltage selective electrolysis, efficient anode dissolution and cathode directional deposition of indium are achieved, physical mixing or chemical co-dissolution of copper and indium is avoided, the purity of recycled metal indium is high, corrosion to a copper backboard base body is small, operation is easy, automatic line production is facilitated, the recycling efficiency is high, the working voltage is low, energy consumption is small, cost is low, and toxic waste gas is avoided. The electrolyte can be recycled, the waste liquid amount is small, and pollution is avoided.

The application provides an In4Sn3O 12 Target material and preparation method thereof. The target material of the application has a density of greater than or equal to 99.2%, a resistivity of less than or equal to 8*10 ‑4 Ω*cm, and high uniformity. The application also provides a preparation method of the In4Sn3O 12 Target material. The method uses indium and tin as raw materials, dissolves the raw materials by acid to obtain a mixed metal salt solution, drops the mixed metal salt solution into ammonia water to precipitate indium hydroxide and tin hydroxide, dries the indium hydroxide and tin hydroxide to obtain a mixed powder, and heats and reacts the mixed powder to obtain an In4Sn3O 12 Powder. The In4Sn3O 12 Powder is activated by an organic acid and granulated to obtain a granulated powder, the granulated powder is formed by a mold to obtain a green body, and the green body is sintered to obtain the In4Sn3O 12 Target material.

The application relates to a preparation method of a topological transformation indium hydroxide nanosheet photocatalyst. Indium sulfide is prepared through a hydrothermal method; the indium sulfide is added into ultrapure water, sodium hydroxide is further added, the solution is fully stirred, and a hydrothermal reaction is performed on the solution to obtain orange precipitates; the obtained orange precipitates are washed and vacuum dried to obtain the topological transformation indium hydroxide nanosheet photocatalyst. The topological transformation indium hydroxide nanosheet photocatalyst is applied to degradation of antibiotics under visible light. The method has the beneficial effects that: the indium hydroxide is synthesized through topological transformation of indium sulfide, has stronger visible light absorption capacity, can accelerate separation and migration of photo-generated electron-hole pairs while providing more reaction active sites, makes the catalyst exhibit good catalytic performance, degrades tetracycline under visible light, and the degradation rate is obviously better than that of the indium sulfide, and the method has great development potential in the field of environmental remediation, and the preparation method is simple, the conditions are easy to control, and the method is green and environment-friendly.

The invention discloses a non-noble metal monatomic doped indium oxide catalyst as well as a preparation method and application thereof. The non-noble metal single atom doped indium oxide catalyst comprises an indium oxide carrier and non-noble metal single atoms doped in the indium oxide carrier in a single atom form, and the element types of the non-noble metal single atoms comprise one or combination of more of Fe, Co, Ni, Cu, Zn and Ag. The preparation method comprises the following steps: mixing indium nitrate with non-noble metal nitrate, and carrying out hydrothermal reaction to obtain a non-noble metal monatomic doped indium hydroxide precursor; and then carrying out high-temperature calcination to prepare the non-noble metal monatomic doped indium oxide catalyst. By developing a preparation strategy of the non-noble metal monatomic doped indium oxide catalyst which is low in cost, convenient to use and capable of being synthesized in batches, the problems that an existing catalyst synthesis process is complex and high in cost can be solved, and the catalyst is applied to driving efficient photocatalytic CO2 reduction reaction.