98 results about "Indium(III) hydroxide" patented technology

The invention discloses a making method of ultrafine indium tin oxide powder through liquid phase co-sedimenting method, which is characterized by the following: adopting metal indium with purity more than 99. 99%, SnCl4 .5H2O and ammonia as raw material; making (NH4)2SO4-NH3 .H2O or NH4Cl-NH3 .H2O with pH value at 7. 0-9. 0 as reacting substrate liquid; adding certain quantity of anhydrous alcohol; adopting liquid-phase co-sediment method to make white indium tin hydroxide predecessor; sintering to obtain light yellow green ball shaped ITO powder with even grain size at 20-60nm.

The invention relates to an Nb-doped nano indium tin oxide powder and a method for preparing high density sputtering coating target thereof. The method comprising the following steps: (1) dissolving high pure metals: high pure metal niobium, high pure metal indium and high pure metal tin are respectively dissolved into transparent solutions by inorganic acid; (2) mixing: the obtained transparent solutions are respectively filled into containers according to the proportion; (3) chemical precipitation: the three transparent solutions are made into Nb-doped and heavily tin-doped indium hydroxide nano-powder; (4) washing: the Nb-doped and heavily tin-doped tin indium hydroxide nano-powder is washed by de-ionized water and then precipitated; (5) calcinating: the nano-powder is calcined, and the Nb-doped nano indium tin oxide powder is prepared; (6) granulation: the Nb-doped nano indium tin oxide powder is added with a bonding agent and then dried, so that Nb-doped nano indium tin oxide powder before molding can be prepared; (7) molding: the Nb-doped nano indium tin oxide powder before molding is pressed into early embryo; (8) sintering: the early embryo is sintered under the normal pressure, and the high density sputtering coating target of the Nb-doped indium tin oxide can be prepared; in addition, pressure sintering can be adopted to further improve the density of the target.

The invention relates to a preparing method of a nano-rod-shaped indium oxide (In2O3) gas-sensitive material, and belongs to the technical field of preparation of inorganic nanometer functional materials. The preparing method comprises the steps of with indium(III) chloride tetrahydrate being an indium source, by adopting hexadecyl trimethyl ammonium bromide as surface active agent, conducting a hydrothermal reaction under the alkaline condition of sodium hydroxide to prepare indium hydroxide and finally, conducting thermal roasting to obtain the indium oxide gas-sensitive material of a nano-rod-shaped structure. Finally prepared indium oxide is In2O3 with the cubic phase and of the nano-rod-shaped structure, has very good performance of sensing and detecting both nitrogen dioxide gas andhydrogen sulfide gas and is insensitive to other gases (carbon monoxide, ethyl alcohol, ammonia, hydrogen, formaldehyde and the like); the indium oxide also has low working temperature, a quick response and restoration, very high sensitivity, a low detection limit, high selectivity and high stability. Besides, the indium oxide gas-sensitive material can also be used in the fields of catalyst, battery materials, photoelectric materials and the like.

A method of manufacturing metal hydroxides with high mass, and a method of manufacturing an ITO target are provided. A gas diffusion electrode 20 configured such that a hydrophobic gas diffusion layer 20a and a hydrophilic reaction layer 20b are laminated is installed in an electrolytic bath 1 to partition the electrolytic bath. An electrolytic solution S is stored in such a portion of a settling chamber 11 as to face the reaction layer of the partitioned electrolytic bath, and indium 4 is immersed in the electrolytic solution. A voltage is applied between a cathode defined by the gas diffusion electrode and an anode defined by indium. Oxygen is supplied into such a partitioned air chamber 10 as to face the gas diffusion layer to perform electrolysis. Indium hydroxides are thus deposited in the electrolytic solution.

The invention relates to a zinc oxide negative electrode material of a zinc air cell and a preparation method thereof. The zinc oxide negative electrode material comprises a double-coating-layer structure, the double-coating-layer structure is that an inner coating layer is further evenly distributed between zinc oxide and an outer coating layer, the inner coating layer is a polymer coating layer, polymer used in the polymer coating layer is chosen from one of strong-base-resistant polyacrylic acid polymer, polymethylacrylic acid or acrylic acid polymer and methacrylic acid polymer, and the outer coating layer is an indium hydroxide and/or stannic oxide layer. According to the preparation method of the zinc oxide negative electrode material, a silane coupling agent is utilized to perform surface modification on the surface of zinc oxide, and then hexamine deposition metal oxide and/or hydroxide is utilized to achieve even coating of the outer coating layer. The zinc oxide negative electrode material disclosed by the invention effectively solves the problem of dendritic growth and deformation and the problem that the coating layers are prone to breaking and collapsing due to volume expansion generated by Zn/ZnO crystal transfer; thus, a finished product which has excellent rate capability and long cycle life can be obtained.

The invention discloses a production method for nanometer indium oxide, and relates to the field of materials. According to the method, by a method of completely adopting an organic solvent, the problem of high water consumption and wastewater discharge caused by a method of dissolving metal indium by adopting an inorganic acid solvent is solved; a precursor indium hydroxide is obtained in a mixed solution environment of the organic solvent and water, so that indium oxide powder particles are fine, round, normal, uniform in particle size, narrow in granularity distribution range, unlikely to be agglomerate and high in dispersibility, and can be used for producing a high-density target. The method has the characteristics that a production process is high in environment friendliness and low in wastewater discharge and a product is uniform in granularity and high in dispersibility.

The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.

The invention discloses a high-dispersion metal-oxide bifunctional catalyst and a preparation method and application thereof. The preparation method comprises the following steps: (1) preparing an ethanol aqueous solution of an indium precursor, then adding a proper amount of an ammonia water-ethanol mixed solution under a stirring condition, controlling the reaction temperature to be 60-100 DEG Cin the adding process, after the addition is finished, continuously carrying out heat preservation and stirring for complete reaction to obtain a mixed solution containing indium hydroxide, cooling,carrying out suction filtration, washing, drying and calcining the mixed solution containing indium hydroxide to obtain a carrier In2O3, (2) uniformly dispersing the carrier In2O3 in a proper amount of absolute ethyl alcohol to obtain a dispersion liquid, and depositing metal atoms M on the carrier In2O3 by using an atomic layer deposition technology to obtain an M-In2O3 catalyst, and (3) carryingout thermal reduction on the M-In2O3 catalyst to obtain the high-dispersion metal-oxide bifunctional catalyst. The high-dispersion metal-oxide bifunctional catalyst has the characteristics of high catalytic activity, low reaction temperature, high ethylene selectivity and long service life.

The invention provides a preparation method of indium oxide and a precursor thereof, belonging to the technical field of inorganic materials. According to the method, metal indium is used as a positive electrode, an inert electrode is used as a negative electrode, an aqueous ammonium salt solution is used as an electrolyte for electrolysis, and hydrogen peroxide is added during electrolysis to obtain indium hydroxide, so nitrate is prevented from being reduced to generate nitrite or nitric oxide, and the preparation process is environmentally friendlier; an anolyte circularly flows between a positive chamber and an anolyte storage tank, a catholyte flows through a negative chamber from a catholyte storage tank and then flows to the anolyte storage tank, and NH<4+> is diffused from the positive chamber to the negative chamber through a cation selective permeation membrane, so the stability of the anolyte and the catholyte is ensured, subsequent stable acquisition of nanometer indium oxide powder with uniform granularity is well guaranteed, and zero emission of waste gas and waste water is easy to achieve; meanwhile, the anolyte can still guarantee normal operation of a system underthe condition of a high solid content, so process efficiency is improved, productivity is increased, and production cost is reduced.

The invention relates to a method for preparing a nanometer indium cadmium sulfide-indium hydroxide composite photocatalyst. The chemical formula of the composite photocatalyst is CdIn2S4-In(OH)3. The catalyst is prepared from indium chloride, cadmium chloride, thiourea and deionized water by a hydrothermal method. According to the XRD (X-Ray Diffraction) spectrogram of the catalyst, along with the prolonging of hydrothermal time, the diffraction peak of In(OH)3 of a sample is gradually weakened and the diffraction peak of CdIn2S4 is gradually enhanced to form the CdIn2S4-In(OH)3 composite photocatalyst; no other impurity peak is found in the spectrogram. The method disclosed by the invention has the advantages that the method is simple in process and simple and convenient in operation; the obtained composite photocatalyst has very high photocatalytic activity and is used for performing catalytic reduction on CO2 to obtain methyl formate under the irradiation of ultraviolet light by taking methanol as a solvent, CO2 can be effectively reduced into organic ester and the green conversion is realized.

The invention discloses a method for electrochemically extracting uranium from seawater by using an oxygen vacancy-containing metal oxide, and the method comprises the following steps: adding glycerolinto an indium nitrate isopropanol solution, and transferring into a high-temperature high-pressure reaction kettle to react to obtain a spherical indium hydroxide solid; dissolving the spherical indium hydroxide solid in deionized water, and then transferring into the high-temperature high-pressure reaction kettle to react so as to obtain a flaky indium hydroxide solid; calcining the flaky indium hydroxide solid to obtain calcined In2O3-x with oxygen vacancies; adding the In2O3-x into ethanol, and then adding a membrane solution; uniformly coating carbon paper with the solution, naturally drying, clamping the dried carbon paper by using a gold electrode, and using the dried carbon paper as a working electrode in a three-electrode system, wherein a counter electrode in the three-electrodesystem is a platinum wire, and a reference electrode is a calomel electrode; adding simulated seawater into an electrolytic tank, placing the three-electrode system in the simulated seawater of the electrolytic tank, and stirring the simulated seawater for electrolysis to realize uranium extraction.

The invention relates to the technical field of preparation of inorganic nanomaterials and particularly relates to an indium oxide nanosphere and a preparation method thereof. The invention aims at solving the problems of complex preparation process, high synthesis temperature and long reaction time of the existing preparation method of the indium oxide nanosphere and simultaneously providing a low-cost indium oxide nanosphere material. The preparation method of the indium oxide nanosphere comprises the following steps: firstly, preparing a mixed solution of indium nitrate and urea, adding ethanol and/or ethylene glycol, dissolving and magnetically stirring to obtain a homogeneous colorless transparent solution; secondly, reacting the colorless transparent solution by a solvothermal method and collecting a solvothermal product; thirdly, centrifuging and washing the solvothermal product to obtain an indium hydroxide precursor; and fourthly, carrying out high-temperature roasting to obtain the indium oxide nanosphere. The preparation method has the advantages of simple process, less reactants, low synthesis temperature, short reaction time and low obtained product cost, and can be widely applied.

The coating type alkaline air sensor nanometer thin film forms with weight ratio of(100-90)(0-10) of indium trioxide, metatitanic acid, with the working process starting from adding alkaline water into the solution of InCl3 .4H2O stirring till the deposit of indium hydroxide, centrifugation, filtering, cleaning and drying to get dry gel by adding metatitanic acid after solution of the indium hydroxide with hydrolytic decomposition and glacial acetic acid volatilization, sintering, cooling to get the titan mixed indium oxide particle and grinding, getting the clear liquid after ultrasonic settlement, centrifugation, getting indium trioxide powder. It is simple, with good response and optional feature, high sensitivity, low monitoring limit, quick recovery of response, good stability and low working temperature.