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Non-vacuum preparation method of light absorption layer of copper indium gallium sulfur selenium (CIGSSe) thin film solar cell

A thin-film solar cell, copper indium gallium sulfide selenide technology, applied in coatings, circuits, electrical components, etc., can solve the problems of impurity residues, complex solution preparation, etc., to achieve uniform distribution, simple solution preparation process, and no residue of impurity ions Effect

Inactive Publication Date: 2014-02-26
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
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Problems solved by technology

[0007] In order to solve the problems of complex solution preparation and residual impurities in the light-absorbing layer of copper indium gallium sulfide selenium thin film solar cells prepared by non-vacuum liquid phase method, the purpose of the present invention is to provide a new type of alcohol solution to prepare copper indium gallium sulfide selenium thin film Method for light absorbing layer of solar cell

Method used

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  • Non-vacuum preparation method of light absorption layer of copper indium gallium sulfur selenium (CIGSSe) thin film solar cell
  • Non-vacuum preparation method of light absorption layer of copper indium gallium sulfur selenium (CIGSSe) thin film solar cell

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Experimental program
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Effect test

Embodiment 1

[0056] Preparation of organic precursor solution: according to Cu in the light absorbing layer 0.7 In 0.7 Ga 0.3 S 0.2 Se 1.8 In the stoichiometric ratio of copper, indium and gallium, 0.35mmol cuprous oxide (Cu 2 O), 0.7mmol indium hydroxide (In(OH) 3 ), 0.3mmol gallium hydroxide (Ga(OH) 3 ) was dissolved in 10mL of a mixed organic solvent of isopropanol, thioacetic acid, ethylene glycol, and ethanolamine, wherein the volume ratio of isopropanol, thioacetic acid, ethylene glycol, and ethanolamine was 5:2:2:1, at room temperature Stir to obtain a clear, transparent, stable organic precursor solution containing copper, indium, gallium, and sulfur;

[0057] Preparation of CIGSSe precursor film: The organic precursor solution was spin-coated to prepare a CIGSSe precursor film on a molybdenum-coated glass substrate and dried on a heating plate at 300 °C;

[0058] Annealing treatment of CIGSSe thin film: anneal the precursor thin film at 500°C for 30 minutes in a selenium at...

Embodiment 2

[0061] Preparation of organic precursor solution: according to Cu in the light absorbing layer 1.0 In 0.7 Ga 0.3 S 0.6 Se 1.4 In the stoichiometric ratio of copper, indium and gallium, 1.0mmol copper oxide (CuO), 0.7mmol indium hydroxide (In(OH) 3 ), 0.3mmol gallium acetylacetonate (Ga(C 5 h 7 o 2 ) 3 ) was dissolved in 10mL of methanol, thioacetic acid, and diethanolamine in a mixed organic solvent, wherein the volume ratio of methanol, thioacetic acid, and diethanolamine was 7:2:1, and stirred at room temperature to obtain clear, transparent, stable copper, indium, and Organic precursor solutions of gallium and sulfur;

[0062] Preparation of CIGSSe precursor film: The organic precursor solution was spin-coated to prepare a CIGSSe precursor film on a molybdenum-coated stainless steel substrate and dried on a heating plate at 300 °C;

[0063] Annealing treatment of CIGSSe thin film: anneal the precursor film at 500°C for 30 minutes in a sulfur and selenium atmosphere...

Embodiment 3

[0065] Preparation of organic precursor solution: according to Cu in the light absorbing layer 0.8 In 0.8 Ga 0.2 S 0.6 Se 1.4 In the stoichiometric ratio of copper, indium and gallium, 0.4mmol cuprous oxide (Cu 2 O), 0.8mmol indium hydroxide (In(OH) 3 ), 0.2mmol gallium acetylacetonate (Ga(C 5 h 7 o 2 ) 3 ) was dissolved in 10mL of a mixed organic solvent of ethanol, thioacetic acid, ethylenediamine, and glycerol, wherein the volume ratio of ethanol, thioacetic acid, ethylenediamine, and glycerol was 6.8:2:1:0.2, at room temperature Stir to obtain a clear, transparent, stable organic precursor solution containing copper, indium, gallium, and sulfur;

[0066] Preparation of CIGSSe precursor film: The organic precursor solution was pulled to prepare a CIGSSe precursor film on a molybdenum-coated glass substrate and dried on a heating plate at 300 °C;

[0067] Annealing treatment of CIGSSe film: anneal the precursor film at 500°C for 30 minutes in an atmosphere of hydro...

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Abstract

The invention relates to a non-vacuum preparation method of a light absorption layer of a copper indium gallium sulfur selenium (CIGSSe) thin film solar cell. The method comprises the following steps: according to the stoichiometric ratio of Cu to In to Ga in CuxInyGa(1-y)SzSe(2-z), dissolving a copper-containing compound, an indium-containing compound and a gallium-containing compound in an organic alcohol solution containing a complexing agent and a sulfur-containing micromolecule reagent, adding a certain viscosity modifier and solution modifier and forming a clear, transparent and stable organic precursor solution, wherein the x is greater than or equal to 0.6 and less than or equal to 1, the y is greater than or equal to 0 and less than or equal to 1, the z is greater than or equal to 0 and less than or equal to 2, the copper-containing compound is at least one of copper oxide, cuprous oxide, copper hydroxide and copper acetylacetonate, the indium-containing compound is at least one of indium oxide, indium hydroxide and indium acetylacetonate and the gallium-containing compound is at least one of gallium oxide, gallium hydroxide and gallium acetylacetonate; depositing a precursor thin film on a conducting layer of a substrate by using the organic precursor solution; and annealing the precursor thin film in the atmosphere of chalcogen to form the light absorption layer.

Description

technical field [0001] The invention mainly relates to a preparation method of a light absorption layer of a copper indium gallium sulfide selenide (CIGSSe) thin film solar cell. It belongs to the field of solar cell energy. Background technique [0002] The energy environment is closely related to the survival and development of human society. With the process of economic globalization, energy and environment issues have become common problems that the whole world faces and need to be solved urgently. The development and utilization of clean and renewable energy is the only way to solve energy and environmental problems. Solar energy is a clean, abundant, renewable energy that is not subject to geographical restrictions, and is inexhaustible. It can be seen that the effective development and utilization of solar energy has very important strategic significance. Solar cells are one of the most efficient forms of utilizing solar energy for human beings. Copper indium galli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C26/00H01L31/18H01L31/032
CPCY02P70/50
Inventor 黄富强谢宜桉王耀明
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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