Preparation method of low-density ITO target material
A low-density, target technology, used in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of increased target density, and achieve the effect of overcoming the shrinkage of the green body and the stable bulk density
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[0024] The invention provides a method for preparing a low-density ITO target, which changes the indium-tin composition in the ITO waste target by adding indium hydroxide slurry to the ITO waste target whose ratio of indium oxide to tin oxide is 93:7. ratio, and finally obtain a low-density ITO target with a ratio of indium oxide to tin oxide of 95:5, specifically, the following steps are included:
[0025] S1. Recover the ITO waste target, and pretreat the ITO waste target to obtain the ITO waste target powder:
[0026] The ITO waste target is a high-density magnetron sputtering ITO scrap or residual target, and the ratio of its indium oxide to tin oxide is 93:7; the pretreatment method of the ITO waste target comprises the following steps:
[0027] (1) Soak the spent ITO target in 4-8mol / L hydrochloric acid for 2-4h, and then wash it with pure water (≥18MΩ / cm) until the conductivity is lower than 50μS / cm;
[0028] (2) Control the water and dry the ITO waste target obtained ...
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