Preparation method of low-density ITO target material

A low-density, target technology, used in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of increased target density, and achieve the effect of overcoming the shrinkage of the green body and the stable bulk density

Active Publication Date: 2019-11-22
广东欧莱高新材料股份有限公司 +1
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of preparing a new ITO target, it is difficult to mix the additives such as indium oxide and the pretreated waste target in order to change the proportion, and it is necessary to add an additional organic binder to assist the green body after mixing. And in the subsequent sintering process, due to the presence of the organic binder, the green body shrinks violently, resulting in an increase in the target density, which is a technical difficulty that needs to be overcome when preparing ITO targets, especially low-density ITO targets.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0024] The invention provides a method for preparing a low-density ITO target, which changes the indium-tin composition in the ITO waste target by adding indium hydroxide slurry to the ITO waste target whose ratio of indium oxide to tin oxide is 93:7. ratio, and finally obtain a low-density ITO target with a ratio of indium oxide to tin oxide of 95:5, specifically, the following steps are included:

[0025] S1. Recover the ITO waste target, and pretreat the ITO waste target to obtain the ITO waste target powder:

[0026] The ITO waste target is a high-density magnetron sputtering ITO scrap or residual target, and the ratio of its indium oxide to tin oxide is 93:7; the pretreatment method of the ITO waste target comprises the following steps:

[0027] (1) Soak the spent ITO target in 4-8mol / L hydrochloric acid for 2-4h, and then wash it with pure water (≥18MΩ / cm) until the conductivity is lower than 50μS / cm;

[0028] (2) Control the water and dry the ITO waste target obtained ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation method of a low-density ITO target material, which comprises the following steps: S1, recovering an ITO waste target, and pretreating the ITO waste target to obtain ITO waste target powder; S2, preparing indium hydroxide slurry, mixing a certain amount of indium hydroxide slurry and the ITO waste target powder according to the proportion, and obtaining ITO powder with a new proportion after drying; and S3, pressing and molding the ITO powder to obtain a green body, and sintering the green body to obtain the low-density target material. Compared with the prior art, according to the low-density ITO target material disclosed by the invention, the indium hydroxide slurry is added to change the ratio of indium to tin in the ITO waste target; the property,similar to colloid, of indium hydroxide slurry is utilized; the indium hydroxide powder can be fully mixed with original ITO powder and serves as an adhesive, so a green body cannot shrink in the process of forming indium oxide through indium hydroxide dehydration, the stability of the volume density of the formed green body is guaranteed, and the technical defect that when indium oxide is used asan additive for changing the proportion, the formed green body shrinks is overcome.

Description

technical field [0001] The invention relates to the production field of ITO targets, in particular to a method for preparing low-density ITO targets. Background technique [0002] Indium tin oxide (indium tin oxide) is referred to as ITO, and the finished product is an ITO ceramic target. The main chemical composition of the ITO target is In 2 o 3 -SnO 2 . ITO target is an important photoelectric functional material, and it is also used for the production of electronic sputtering ITO transparent conductive film glass. It is an extremely important electronic ceramic product for the information industry in the era of knowledge economy. At present, the industrial production of ITO thin films is mainly by magnetron sputtering coating of ITO targets, but the utilization rate of sputtering coatings of ITO targets is only 30%, and the remaining unused parts become waste targets. Waste products such as scraps and chips will also be generated during the material production proces...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/622C04B35/626C23C14/35
CPCC04B35/457C04B35/62204C04B35/62605C23C14/35C23C14/3414C04B2235/3286C04B2235/96
Inventor 叶俊峰文宏福
Owner 广东欧莱高新材料股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products