A kind of preparation method of low-density ito target material

Abstract

The invention relates to a method for preparing a low-density ITO target, comprising the following steps: S1, recovering the ITO waste target, and performing pretreatment on the ITO waste target to obtain ITO waste target powder; S2, preparing indium hydroxide slurry , according to the ratio, mix a certain amount of the indium hydroxide slurry with the ITO waste target powder, and dry to obtain a new ratio of ITO powder; S3, press the ITO powder to obtain a green body, and The low-density target is obtained after the green body is sintered. Compared with the prior art, the low-density ITO target of the present invention changes the ratio of indium and tin in the ITO waste target by adding indium hydroxide slurry, and utilizes the colloid-like properties of the indium hydroxide slurry, which can be fully compatible with The original ITO powder is mixed and acts as a binder. The process of dehydrating indium hydroxide to form indium oxide will not shrink the green body, ensuring the stability of the bulk density of the green body after molding, and overcoming the use of indium oxide as a change in the ratio. The technical defect that the green body shrinks when the additive is used.

Description

technical field

[0001] The invention relates to the production field of ITO targets, in particular to a method for preparing low-density ITO targets. Background technique

[0002] Indium tin oxide (indium tin oxide) is referred to as ITO, and the finished product is an ITO ceramic target. The main chemical composition of the ITO target is In 2 o 3 -SnO 2 . ITO target is an important photoelectric functional material, and it is also used for the production of electronic sputtering ITO transparent conductive film glass. It is an extremely important electronic ceramic product for the information industry in the era of knowledge economy. At present, the industrial production of ITO thin films is mainly by magnetron sputtering coating of ITO targets, but the utilization rate of sputtering coatings of ITO targets is only 30%, and the remaining unused parts become waste targets. Waste products such as scraps and chips will also be generated during the material production proces...