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A kind of preparation method of low-density ito target material

A low-density, target technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve problems such as increase in target density

Active Publication Date: 2022-02-08
OMAT ADVANCED MATERIALS (GUANGDONG) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of preparing a new ITO target, it is difficult to mix the additives such as indium oxide and the pretreated waste target in order to change the proportion, and it is necessary to add an additional organic binder to assist the green body after mixing. And in the subsequent sintering process, due to the presence of the organic binder, the green body shrinks violently, resulting in an increase in the target density, which is a technical difficulty that needs to be overcome when preparing ITO targets, especially low-density ITO targets.

Method used

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Embodiment

[0024] The invention provides a method for preparing a low-density ITO target, which changes the indium-tin composition in the ITO waste target by adding indium hydroxide slurry to the ITO waste target whose ratio of indium oxide to tin oxide is 93:7. ratio, and finally obtain a low-density ITO target with a ratio of indium oxide to tin oxide of 95:5, specifically, the following steps are included:

[0025] S1. Recover the ITO waste target, and pretreat the ITO waste target to obtain the ITO waste target powder:

[0026] The ITO waste target is a high-density magnetron sputtering ITO scrap or residual target, and the ratio of its indium oxide to tin oxide is 93:7; the pretreatment method of the ITO waste target comprises the following steps:

[0027] (1) Soak the spent ITO target in 4-8mol / L hydrochloric acid for 2-4h, and then wash it with pure water (≥18MΩ / cm) until the conductivity is lower than 50μS / cm;

[0028] (2) Control the water and dry the ITO waste target obtained ...

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PUM

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Abstract

The invention relates to a method for preparing a low-density ITO target, comprising the following steps: S1, recovering the ITO waste target, and performing pretreatment on the ITO waste target to obtain ITO waste target powder; S2, preparing indium hydroxide slurry , according to the ratio, mix a certain amount of the indium hydroxide slurry with the ITO waste target powder, and dry to obtain a new ratio of ITO powder; S3, press the ITO powder to obtain a green body, and The low-density target is obtained after the green body is sintered. Compared with the prior art, the low-density ITO target of the present invention changes the ratio of indium and tin in the ITO waste target by adding indium hydroxide slurry, and utilizes the colloid-like properties of the indium hydroxide slurry, which can be fully compatible with The original ITO powder is mixed and acts as a binder. The process of dehydrating indium hydroxide to form indium oxide will not shrink the green body, ensuring the stability of the bulk density of the green body after molding, and overcoming the use of indium oxide as a change in the ratio. The technical defect that the green body shrinks when the additive is used.

Description

technical field [0001] The invention relates to the production field of ITO targets, in particular to a method for preparing low-density ITO targets. Background technique [0002] Indium tin oxide (indium tin oxide) is referred to as ITO, and the finished product is an ITO ceramic target. The main chemical composition of the ITO target is In 2 o 3 -SnO 2 . ITO target is an important photoelectric functional material, and it is also used for the production of electronic sputtering ITO transparent conductive film glass. It is an extremely important electronic ceramic product for the information industry in the era of knowledge economy. At present, the industrial production of ITO thin films is mainly by magnetron sputtering coating of ITO targets, but the utilization rate of sputtering coatings of ITO targets is only 30%, and the remaining unused parts become waste targets. Waste products such as scraps and chips will also be generated during the material production proces...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/457C04B35/622C04B35/626C23C14/35
CPCC04B35/457C04B35/62204C04B35/62605C23C14/35C23C14/3414C04B2235/3286C04B2235/96
Inventor 叶俊峰文宏福
Owner OMAT ADVANCED MATERIALS (GUANGDONG) CO LTD
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