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Preparation method of nanometer indium hydroxide

An indium hydroxide, nano-scale technology, applied in the field of ITO target materials, can solve the problems of increasing washing difficulty and washing water consumption, increasing preparation cost and operation steps, poor uniformity of indium hydroxide products, etc., so as to reduce washing difficulty. and washing water consumption, reducing the difficulty of wastewater treatment, and reducing the production of ammonium nitrate mother liquor

Active Publication Date: 2019-08-23
先导薄膜材料(安徽)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the above method will produce a large amount of ammonium nitrate mother liquor, which will produce a large amount of nitrogen-containing wastewater after washing, which increases the difficulty of wastewater treatment; at the same time, it must be under the action of a dispersant to obtain a small particle size product, which increases the preparation cost and operation on the one hand. Steps, on the other hand, increase the impurities in the slurry, thereby increasing the washing difficulty and washing water consumption; in addition, the uniformity of the indium hydroxide product prepared by it is not good

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  • Preparation method of nanometer indium hydroxide

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preparation example Construction

[0031] The invention provides a method for preparing nanoscale indium hydroxide, comprising the following steps:

[0032] a) passing ammonia gas into the indium nitrate aqueous solution to obtain a precursor slurry;

[0033] b) After washing the precursor slurry, it is spray-dried to obtain indium hydroxide powder.

[0034] According to the present invention, ammonia gas is introduced into the indium nitrate aqueous solution to obtain the precursor slurry.

[0035] In the present invention, the method of obtaining the indium nitrate aqueous solution is not particularly limited, and can be obtained in a manner well known to those skilled in the art; in some embodiments, the indium nitrate solid is mixed with water to obtain an indium nitrate aqueous solution; in other In the embodiment, the indium nitrate solution is diluted with water to obtain an indium nitrate aqueous solution. In the present invention, the molar concentration of indium in the indium nitrate aqueous soluti...

Embodiment 1

[0049] Dilute the indium nitrate solution with water until the molar concentration of indium is 2 mol / L, and feed ammonia gas at 60 mL / min while stirring at 40°C until the pH of the slurry is 10, stop the aeration, and age at 25°C for 8 hours. The slurry was transferred to a storage tank, washed with a filter press, and deionized water with a conductivity of 10 μs / cm was added for circular washing until the conductivity of the slurry was 19.0 μs / cm. Afterwards, a double-flow spray dryer is used for spray drying, with an inlet air temperature of 300°C and an outlet air temperature of 150°C to obtain indium hydroxide powder without sieving.

[0050] After testing, the purity of the obtained indium hydroxide product is 99.99%; the specific surface area is 47.2m 2 / g, D50 is 0.28μm; product moisture content is 0.1%.

[0051] see figure 1 , figure 1 It is the SEM image (magnification is 3000 times) of the product obtained in Example 1 of the present invention; it can be seen tha...

Embodiment 2

[0054] Dilute the indium nitrate solution with water until the molar concentration of indium is 0.4 mol / L, feed ammonia gas at 20 mL / min with stirring at 25°C until the pH of the slurry is 7.5, stop the aeration, and age at 40°C for 8 hours. The slurry was transferred to a storage tank, washed with a filter press, and deionized water with a conductivity of 10 μs / cm was added for circular washing until the conductivity of the slurry was 17.6 μs / cm. Afterwards, a double-flow spray dryer was used for spray drying, with an inlet air temperature of 250° C. and an outlet air temperature of 120° C. to obtain indium hydroxide powder without sieving.

[0055] After testing, the purity of the obtained indium hydroxide product is 99.99%; the specific surface area is 50.02m 2 / g, D50 is 0.48μm; the water content of the product is 0.80%.

[0056] see image 3 , image 3 It is the SEM image (magnification is 3000 times) of the product obtained in Example 2 of the present invention; it ca...

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Abstract

The invention provides a preparation method of nanometer indium hydroxide. The preparation method comprises the following steps: a) introducing ammonia gas into an aqueous indium nitrate solution to obtain a precursor slurry; and b) washing the precursor slurry, and performing spray drying to obtain an indium hydroxide powder. The preparation method provided by the invention can reduce the production of an ammonia nitrate mother liquor, reduce the washing difficulty and the consumption of washing water, reduce the generation of nitrogen-containing wastewater and reduce the wastewater treatmentdifficulty; the preparation method allows the nano-level product to be obtained without a dispersant, so the preparation cost is reduced, the operation steps are simplified, and impurities in the slurry are reduced, thereby the washing difficulty and the consumption of washing water are reduced; and the obtained product has small particle size and a good uniformity, and does not need to be sieved, so the preparation process is simplified.

Description

technical field [0001] The invention relates to the technical field of ITO targets, in particular to a preparation method of nanoscale indium hydroxide. Background technique [0002] Indium Hydroxide (In(OH) 3 ) is an extended product of indium, which is a precursor for manufacturing indium oxide or compound powder containing indium oxide, and can be used to manufacture ITO targets for sputtering that form ITO films (composite oxides with indium-tin as the main component). [0003] ITO film is a transparent electrode film widely used in display devices such as solar cells and liquid crystal displays. With the rapid development of global digital technology, today's optoelectronic equipment is gradually developing in the direction of personalization, ultra-large and special-shaped flat-panel displays, and the demand for transparent conductive films such as sputtering targets has increased significantly. Indium hydroxide is used as the precursor of the main raw material for f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00
CPCC01G15/00C01P2004/03C01P2004/51C01P2004/62C01P2006/12C01P2006/80C01P2006/82
Inventor 凤吾生朱刘何坤鹏张莉兰
Owner 先导薄膜材料(安徽)有限公司
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