Nb-doped nano indium tin oxide powder and method for preparing high density sputtering coating target thereof

A technology of oxide powder and sputtering coating, which is applied in the field of powder metallurgy and ceramics, can solve the problems of poor performance of ITO film, and achieve the effect of low cost, uniform composition and improved conductivity

Inactive Publication Date: 2009-11-18
BEIHANG UNIV +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

The mechanism is that the sintering agent forms a liquid at high temperature (such as Bi 2 o 3 A liquid phase is formed at a temperature of about 830°C) and coated on the surface of ITO particles, thereby preventing the sublimation of ITO, and the existence of liquid helps the substance to move and shrink. However, adding sintering agent will always bring impurities to make The performance of ITO film deteriorates

Method used

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  • Nb-doped nano indium tin oxide powder and method for preparing high density sputtering coating target thereof

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Embodiment 1

[0052] The invention discloses a method for preparing niobium-doped nano-indium tin oxide powder and its high-density sputtering coating target, comprising the following steps:

[0053] Step 1: First, dissolve the high-purity niobium raw material into a transparent solution of niobium hydrofluoric acid niobium nitrate with a mixed solution of hydrofluoric acid and nitric acid; Aqua regia dissolves high-purity tin raw material into tin chloride transparent solution.

[0054] Step 2: Divide the above transparent solutions into respective containers according to the ratio of In:Sn:Nb=100:8.6:0.3.

[0055] Step 3: The above three kinds of transparent solutions are mixed in a 5000mL three-necked beaker according to the mass ratio of niobium, tin and indium in the ratio of In:Sn:Nb=100:8.6:0.3 by homogeneous co-precipitation method, and the order of mixing is as follows: : first indium nitrate salt solution is mixed with urea and deionized water, and the mass ratio of the three is ...

Embodiment 2

[0062] The invention discloses a method for preparing niobium-doped nano-indium tin oxide powder and its high-density sputtering coating target, comprising the following steps:

[0063] Step 1: First, dissolve the high-purity niobium raw material into a transparent solution of niobium nitrate hydrofluoric acid with a mixed solution of hydrofluoric acid and nitric acid; Dissolve high-purity tin raw materials into tin chloride transparent solution.

[0064] Step 2: Divide the above transparent solutions into respective containers according to the ratio of In:Sn:Nb=100:9.6:0.5.

[0065] Step 3: The above three kinds of transparent solutions are mixed in a 5000mL three-necked beaker according to the mass ratio of niobium, tin and indium in the ratio of In:Sn:Nb=100:9.6:0.5 by homogeneous co-precipitation method, and the order of mixing is as follows: : first indium nitrate salt solution is mixed with urea and deionized water, and the mass ratio of the three is In:(NH 2 ) 2 CO:H...

Embodiment 3

[0072] The invention discloses a method for preparing niobium-doped nano-indium tin oxide powder and its high-density sputtering coating target, comprising the following steps:

[0073] Step 1: First, dissolve the high-purity niobium raw material into a transparent solution of niobium hydrofluoric acid niobium nitrate with a mixed solution of hydrofluoric acid and nitric acid; Aqua regia dissolves high-purity tin raw material into tin chloride transparent solution.

[0074] Step 2: Divide the above transparent solutions into respective containers according to the ratio of In:Sn:Nb=100:10.6:0.7.

[0075] Step 3: The above three transparent solutions are mixed in a 5000mL three-necked beaker according to the mass ratio of niobium, tin and indium in the ratio of In:Sn:Nb=100:10.6:0.7 by homogeneous co-precipitation method, and the order of mixing is as follows: : first indium nitrate salt solution is mixed with urea and deionized water, and the mass ratio of the three is In:(NH ...

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Abstract

The invention relates to an Nb-doped nano indium tin oxide powder and a method for preparing high density sputtering coating target thereof. The method comprising the following steps: (1) dissolving high pure metals: high pure metal niobium, high pure metal indium and high pure metal tin are respectively dissolved into transparent solutions by inorganic acid; (2) mixing: the obtained transparent solutions are respectively filled into containers according to the proportion; (3) chemical precipitation: the three transparent solutions are made into Nb-doped and heavily tin-doped indium hydroxide nano-powder; (4) washing: the Nb-doped and heavily tin-doped tin indium hydroxide nano-powder is washed by de-ionized water and then precipitated; (5) calcinating: the nano-powder is calcined, and the Nb-doped nano indium tin oxide powder is prepared; (6) granulation: the Nb-doped nano indium tin oxide powder is added with a bonding agent and then dried, so that Nb-doped nano indium tin oxide powder before molding can be prepared; (7) molding: the Nb-doped nano indium tin oxide powder before molding is pressed into early embryo; (8) sintering: the early embryo is sintered under the normal pressure, and the high density sputtering coating target of the Nb-doped indium tin oxide can be prepared; in addition, pressure sintering can be adopted to further improve the density of the target.

Description

(1) Technical field: [0001] The invention relates to a preparation method of a powder and a target material, in particular to a method for preparing a niobium-doped nano-indium tin oxide (note: hereinafter, nano-indium tin oxide is referred to as ITO) powder and a high-density sputtering coating target material, belonging to powder Metallurgy and ceramic technology fields. (two) background technology: [0002] Various displays such as liquid crystal displays (LCD) and mobile phone screens and optoelectronic devices such as solar cells require transparent conductive films as transparent conductive electrode materials, and the transparency and conductivity of the film are one of the key factors for the performance of the optoelectronic devices . Among various transparent conductive films, indium tin oxide transparent conductive film (note: hereinafter referred to as ITO film) has the best performance. Therefore, it is widely used in the above optoelectronic devices. The met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622C23C14/34C23C14/06
CPCC23C14/086C23C14/3414
Inventor 张维佳郑伟张静沈燕龙赵而敬
Owner BEIHANG UNIV
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