38 results about "Nb doped" patented technology

A flow field plate or bipolar plate for a fuel cell that includes a metal oxide coating that makes the bipolar plate conductive, hydrophilic and stable in the fuel cell environment. Non-limiting examples of suitable doped coatings Ta doped TiO₂, Nb doped TiO₂ and F doped SnO₂. In an alternate embodiment, the metal oxide is a non-stoichiometric metal oxide that includes oxygen vacancies in the lattice structure that provides the conductivity. Non-limiting examples of suitable non-stoichiometric metal oxides include TiO_2−x and TiO_2+y.

The described embodiments provide an energy storage device that includes a positive electrode including a material that stores and releases ion, a negative electrode including Nb-doped TiO₂(B), and a non-aqueous electrolyte containing lithium ions. The described embodiments provide a method including the steps of combining at least one titanium compound and at least one niobium compound in ethylene glycol to form a precursor solution, adding water into the precursor solution to induce hydrolysis and condensation reactions, thereby forming a reaction solution, heating the reaction solution to form crystallized particles, collecting the particles, drying the collected particles, and applying a thermal treatment at a temperature >350° C. to the dried particles to obtain Nb-doped TiO₂(B) particles.

The invention relates to a preparation method of neodymium-doped titanium base tin dioxide-antimony electrode. The method comprises the following steps: 1) the pretreatment of electrode substrate: polishing, alkaline cleaning and pickling; 2) the preparation of masking liquid: dissolving SnCl4.5H2O, SbCl3 and Nd(NO3)3 according to a ratio of 100:15:1 in solvent to obtain the masking liquid; 3) thepreparation of electrode coating by using immersion method: (1) completely soaking the titanium electrode substrate in the masking liquid for 1min; (2) withdrawing the titanium electrode substrate, blowing away the excessive masking liquid with a blow drier; (3) drying in a baking oven at 100-120 DEG C for 10min to volatilize all the solvent; (4) placing the substrate in a muffle furnace to perform thermal oxidation at 550 DEG C for 15min; (5) cooling to room temperature, dipping again, drying, performing thermal oxidation and repeating the above steps for 15 times to obtain the Nb-doped Ti/Sb-SnO2 electrode. The Nb-doped Ti/Sb-SnO2 electrode prepared by the method of the invention has high oxygen evolution potential, catalytic performance and electricity.

The present invention concerns a core-shell composite material comprising:

• • a core consisting of Nb-doped TiO₂ of formula TiNbO_x; and
  • a shell consisting of a homogeneous layer of Pt or Pt alloy of 1 to 50 ML in thickness.

The core-shell composite material may in particular find application in fuel cells.

The invention relates to an Nb-doped nano indium tin oxide powder and a method for preparing high density sputtering coating target thereof. The method comprising the following steps: (1) dissolving high pure metals: high pure metal niobium, high pure metal indium and high pure metal tin are respectively dissolved into transparent solutions by inorganic acid; (2) mixing: the obtained transparent solutions are respectively filled into containers according to the proportion; (3) chemical precipitation: the three transparent solutions are made into Nb-doped and heavily tin-doped indium hydroxide nano-powder; (4) washing: the Nb-doped and heavily tin-doped tin indium hydroxide nano-powder is washed by de-ionized water and then precipitated; (5) calcinating: the nano-powder is calcined, and the Nb-doped nano indium tin oxide powder is prepared; (6) granulation: the Nb-doped nano indium tin oxide powder is added with a bonding agent and then dried, so that Nb-doped nano indium tin oxide powder before molding can be prepared; (7) molding: the Nb-doped nano indium tin oxide powder before molding is pressed into early embryo; (8) sintering: the early embryo is sintered under the normal pressure, and the high density sputtering coating target of the Nb-doped indium tin oxide can be prepared; in addition, pressure sintering can be adopted to further improve the density of the target.

Multiferroic articles including highly resistive, strongly ferromagnetic strained thin films of BiFe_0.5Mn_0.5O₃ (“BFMO”) on (001) strontium titanate and Nb-doped strontium titanate substrates were prepared. The films were tetragonal with high epitaxial quality and phase purity. The magnetic moment and coercivity values at room temperature were 90 emu/cc (H=3 kOe) and 274 Oe, respectively. The magnetic transition temperature was strongly enhanced up to approximately 600 K, which is approximately 500 K higher than for pure bulk BiMnO₃.

The invention provides an Nb-doped YBCO (Yttrium Barium Copper Oxide) super-conducting film and a preparation method. The super-conducting film is prepared by mixing a nano-particle BYNO (Ba2YNbO6) with a double perovskite structure into a YBCO film, wherein an Nb material is 1 to 10% of total quantity of a material of a metal cation. The preparation method comprises the following steps of: preparing a YBCO precursor solution; preparing an Nb precursor solution; preparing an Nb-doped YBCO precursor solution; coating same on a gel film; roasting at a low temperature; and sintering at a high temperature. The preparation method provided by the invention is simple and easy to carry out; a mixture ratio of doped materials can be randomly controlled; and furthermore, raw materials are cheap and easy to obtain, vacuum equipment is not needed, and low cost is ensured; a prepared film has higher critical transition temperature, critical current density and an excellent biaxial texture.

The invention discloses a high-toughness Nb doped W/TiC composite material and a preparation method thereof, wherein the high-toughness Nb doped W/TiC composite material comprises the following elements in percentage by mass: 1-3% of Nb, 1% of TiC, and the balance of W; and the preparation method comprises the following steps: W powder, Nb powder and TiC powder are put in a ball milling tank for ball milling 4 hours to obtain a composite powder body; the composite powder body is pressed by the pressure of 300 MPa to obtain a pressed shape; and the pressed shape is put in a high-temperature sintering furnace for sintering to obtain the Nb doped W/TiC composite material. The composite material can effectively improve the toughness of a tungsten-based material.

The invention discloses a method for preparing a graphene-Nb-doped TiO<2> nanotube heterostructure photocatalyst. The photocatalyst is responded in a visible light region, and belongs to the technicalfield of photocatalysis. The preparation method comprises the steps: by using isopropanol as a solvent, and tetrabutyl titanate as a precursor, and preparing a supported nano-titanium dioxide catalyst modified on the niobium surface by using a solvothermal method; and then coupling with graphene oxide in an alkaline hydrothermal process to form composite material of the titanium dioxide nanotubemodified on the niobium surface on uniformly supporting reduced graphene sheet, that is the graphene-Nb-doped TiO<2> nanotube heterostructure photocatalyst. In the invention, the photocatalyst, prepared by doping TiO<2>, structuring a tubular structure and the co-modification strategy of composite graphene, has a wide visible light spectral response range, rich surface active sites and high chargeseparation ability. The photocatalytic degradation efficiency reaches 95.2%, which has good industrial application prospects.

The invention discloses a Nb-doped Ni-Co-Mn-Li ion battery positive electrode material and a preparation method thereof. The chemical formula of the Nb-doped Ni-Co-Mn-Li ion battery positive electrodematerial is LiaNixCoyMnzNbbO2, wherein 1<=a<=1.2, 0.3<=x<=0.98, 0.01<=y<=0.6, 0.001<=z<=0.6, b=4/5-a/5-3x/5-3y/5-3z/5, and 0.00001<=b<=0.2. According to the Nb-doped Ni-Co-Mn-Li ion battery positiveelectrode material, monocrystalline Co/Mn composite precursor and Nb compound are premixed at ultrahigh speed, the mixture of the monocrystalline Co/Mn composite precursor and the Nb compound are mixed at high speed with common polycrystalline Ni/Co/Mn precursor to improve the mixed effects; due to the high mechanical strength, the crystalline composite precursor can be mixed at ultrahigh speed and avoid being shattered; meanwhile, the monocrystalline composite precursor can play the role of collision medium to fully scatter the Nb compound and accordingly to fully mix doping elements with major elements.

The invention relates to a preparation method of a lithium-rich manganese-based positive electrode material. The preparation method comprises the following steps of: (1) dissolving a niobium carboxylic acid derivative in deionized water to prepare a solution with the pH value of 1-3; (2) mixing a lithium-rich manganese-based material with the solution of the niobium carboxylic acid derivative formixing, and stirring and heating the mixture to a temperature of 55-80 DEG C, preferably 60-65 DEG C to form a suspension; (3) adding a lithium source, a complexing agent and a dispersing agent according to a molar ratio of 1:1-3:0.01-0.5 into the suspension, performing heating at a temperature of 60-100 DEG C for 10h to form a lithium-rich manganese-based material coated with a Li-Nb precursor; and (4) performing calcination of the lithium-rich manganese-based material coated with the Li-Nb precursor at a temperature of 500-900 DEG C for 5-15h to obtain a manganese-based positive electrode material. The method employs the mild acidity of the solution of the niobium carboxylic acid derivative to construct Li+/H+ structure defects at the surface of the lithium-rich manganese-based material,and performs addition of the lithium source and the high-temperature solid-phase reaction to construct an Nb-doped/LiNbO3-coated dual-shell surface reconstruction layer so as to obviously improve theelectrochemical performance of the lithium-rich manganese-based material.

The invention provides a method for improving Fe-Se superconducting transition temperature by Nb doping. The method includes: mixing iron powder and selenium powder in an agate mortar, and performingfull grinding to obtain uniform mixed powder; then pressing the ground powder into tablets and conducting vacuum sealing in a quartz tube; putting the well sealed quartz tube into a tubular sinteringfurnace, and conducting sintering by one-step sintering process to obtain an FeSe block material, and then performing grinding into powder in a mortar; subjecting pure Nb powder and the FeSe powder obtained in step one to grinding and mixing according to an atomic percentage ratio of x:1, x=0.02-0.08, thus obtaining mixed powder; and subjecting the mixed powder obtained in the second step to tabletting, placing the product in a tubular furnace, conducting vacuum pumping, and introducing high purity argon into the tube for secondary sintering, and then carrying out furnace cooling so as to obtain an Nb-doped FeSe superconducting block. Nb doping can increase the superconducting transition temperature of FeSe to 13.6K.

The invention relates to a rapid response wide frequency channel laser detector made of oxide heterogeneous junction material, comprising: a strontium titanic niobate-doped substrate and a lanthanum manganate-doped film layer epitaxially grown on the substrate, thus forming a Nb doped -lanthanum manganate doped oxide heterogeneous junction; or expitaxially growing an insulating layer on the strontium titanic niobate-doped mono-crystalline substrate, and expitaxially growing a lanthanum manganate- doped film on the insulating layer, thus forming a strontium titanic niobate doped-insulating layer-lanthanum manganate doped oxide heterogeneous junction; the first electrode is arranged on the lanthanum manganate-doped film, the second electrode is arranged on the substrate, and the two electrodes are connected with one end of an electrode lead each, and one end of one electrode lead and one end of the other electrode compose a signal output end. As the light irradiates the laser detector, it directly generates a voltage signal without any auxiliary power supply and electronic circuit. Its response waveband ranges from ultraviolet to far infrared, able to respond to fly-second wide laser pulse, and the voltage pulse generated by the laser pulse has front edge less than 1.5ns, half width less than 2ns and full width equal to only several ns.

The invention discloses Mg-Nb doped bismuth titanate microwave dielectric ceramic. The chemical formula of the Mg-Nb doped bismuth titanate microwave dielectric ceramic is MgxBi[4-x]Ti[3-x]NbxO12, wherein x ranges from 0.1 to 0.4. A preparation method comprises the steps that the raw materials of Bi2O3, TiO2, (MgCO3)4.Mg(OH)2.5H2O and Nb2O5 are mixed according to the stoichiometric ratio of MgxBi[4-x]Ti[3-x]NbxO12 of which the x ranges from 0.1 to 0.4 and ball-milled for 6 h, drying is conducted at 90 DEG C, and grinding and sieving are conducted; synthesis is conducted at 800 DEG C, secondary ball milling is conducted for 12 h, drying, grinding and sieving are conducted, 7 wt% of polyvinyl alcohol water solution is additionally added for granulation, compression column homogenization is conducted, mashing, grinding and sieving are conducted, and compression molding is conducted to form a green body, the green body is subjected to heat preservation for 1 h at 650 DEG C, and organic matter eliminating is conducted; sintering is conducted at 1,000 DEG C to 1,100 DEG C, and the Mg-Nb doped bismuth titanate microwave dielectric ceramic is obtained. According to the Mg-Nb doped bismuth titanate microwave dielectric ceramic and the preparation method thereof, the Mg-Nb doped bismuth titanate microwave dielectric ceramic with a high dielectric constant is obtained at low sintering temperature, dielectric loss of bismuth titanate is reduced, the product performance is improved, the best sintering temperature is 1,050 DEG C, epsilon r equals to 125, and Q*f equals to 632 GHz.

The invention provides a photocatalytic reagent which has the chemical composition of any one of TiO2, La-doped TiO2, Nb-doped TiO2 and Bi-doped TiO2. The invention also discloses equipment applying the photocatalytic reagent on aluminized paper. A waste gas outlet is formed in a photocatalytic reactor; ultraviolet lamp tubes are arranged on the inner side wall of the photocatalytic reactor on two sides of the waste gas outlet; a rotatable rod is arranged at a position, which is 3-8cm away from the ultraviolet lamp tubes; multiple hot air inlets are formed in the bottom of the photocatalytic reactor; and aluminized paper belt roller shafts are arranged on two sides of the photocatalytic reactor. The experiment proves that the degradation rate of formaldehyde and TVOC is increased along with the prolonged illumination time, the concentration of the formaldehyde is reduced along with the prolonged illumination time, the degradation rate of the formaldehyde and TVOC is not influenced by the coating thickness of the photocatalytic reagent, the photocatalytic reagent has repeatability on degradation, and the degradation rate of the photocatalytic reagent on the formaldehyde is not less than 85 percent.

The invention discloses an Nb-doped YxYb1-xBCO superconductive film and a preparation method thereof, and belongs to the technical field of YBCO superconductive film modification. The method which allows Nb to be doped in a YxYb1-xBCO film comprises the following steps: 1, preparing a YBCO precursor solution; 2, preparing a Yb precursor solution; 3, preparing a YxYb1-xBCO precursor solution; 4, preparing an Nb precursor solution; 5, preparing an Nb-doped YxYb1-xBCO precursor solution; 6, coating a gel film; 7, sintering at a low temperature; and 8, sintering at a high temperature. The method has the advantages of simplicity, easy implementation, discretionary control of the proportion of a dopant, cheap and easily available raw materials, no need of vacuum equipment, and low cost, and the prepared film has a high phase purity, a high critical transition temperature and a good surface.

The invention discloses an electronic skin and a preparation method thereof. The electronic skin includes a mica substrate, a 50% Nb-doped BaTiO3 semiconductor thin film layer covering the mica substrate, and a platinum electrode covering the semiconductor thin film layer, the thickness of the mica substrate is 0.02-20 [mu]m, the thickness of the semiconductor thin film layer is 5-200 nm, and thethickness of the metal electrode is 5-200 nm. The electronic skin can sense temperature, stress, deformation and light, has the advantages of flexible, low weight, low thickness, low power consumption, highly sensitive stress induction, low-temperature and organic solvent resistance and the like, and further has the characteristics of good low-temperature and flexural fatigue resistance; and the preparation process of electronic skin is simple, a mature coating process can be compatible with a semiconductor process, photoetching and ion etching can be realized, thus the efficiency is higher, device miniaturization and integration are more convenient, and industrialized promotion is easy.

Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.

The invention discloses a preparation method for an Nb-doped Li4T5O12 nano material. The preparation method comprises the following steps of a, adding ethanol into backflow equipment; b, adding compounds of lithium chloride, niobium chloride and titanium in sequence into a solvent in the equipment, constructing the equipment, stirring until a solution is clarified, and then continuing to stir the solution; c, heating the solution in the step b firstly until backflow is started, then adjusting the temperature for backflow to 24-36 hours, ending the backflow after gel is formed, and taking out the gel after the gel is cooled; d, drying the gel under the temperature of 200-250 DEG C, and removing the solvent to obtain an Nb-doped lithium titanate precursor; and e, calcining the Nb-doped lithium titanate precursor obtained in the step d under the temperature of 650-750 DEG C to obtain the Nb-doped Li4T5O12 negative electrode material. The raw materials and the technology of the preparation method are simple; the particle size of the obtained product is small, and the dispersivity is high; the Nb-doped Li4T5O12 nano material is relatively high in specific charge and discharge capacity and relatively stable in cycle performance.

The invention discloses an inorganic perovskite light-absorbing material (La<1-a-b-c-d>YDyBi<c>Er<d>)M<0.5>Mn<0.5>O<3> and a preparation method thereof. The preparation method comprises the following steps: preparing a precursor solution; (2) preparing sol-gel; (3) coating a bottom electrode with the sol-gel, placing the bottom electrode into a drying oven at the temperature of 90 to 110 DEG C for drying, and keeping the temperature at 600 to 1,000 DEG C for thermal treatment; and (4) preparing an indium-doped zinc oxide electrode on an upper surface of deposited sol-gel. Through adoption of the preparation method, the (La<1-a-b-c-d>YDyBi<c>Er<d>)M<0.5>Mn<0.5>O<3> is prepared by a sol-gel method, and a highly-stable lead-free perovskite solar light-absorbing material layer of which a band gap width is adjustable between 1.3eV and 2.2eV is prepared on a Nb-doped SrTiO<3> substrate. Short-circuit current is between 5 and 7.55mA/cm<2>, and an open-circuit voltage is between 0.24 to 0.55V. The material has the characteristics of simple preparation process, high chemical stability, freeness from environmental pollution elements, and band gap width being adjustable in a relatively large range; the power conversion efficiency can be approximate to 8 percent; and other photovoltaic absorbing layer materials are effectively supplemented and adjusted.