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Fast response broad band laser detector made by oxide heterojunction material

A laser detector and heterojunction technology, applied in the field of laser detectors, can solve problems such as insufficient response band, insufficient optical response of the detector, and inability to detect and measure laser pulse pulse laser waveform, etc., and achieve high sensitivity , the preparation method is simple

Inactive Publication Date: 2008-11-26
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although people have developed many different types of laser detectors such as pyroelectricity, photoelectricity, pyroelectricity, etc., the work for novel laser detectors is still people's interest and ongoing work, and the applicant is also in this regard Obtained the following patents for laser detectors, such as patent number: ZL89202869.6; patent number: ZL89220541.5; patent number: ZL90202337.3, patent number: ZL90205920.3; The photoresponse of the detector is not fast enough, and the response band is not wide enough.
[0003] People have done a lot of research on the magnetoresistance properties of doped lanthanum manganate materials, and recently people have also observed the photoelectric properties of doped lanthanum manganate films (such as literature 1, Time dependence of laser-inducedthermoelectric voltages in La 1-x Ca x MnO 3 and YBa 2 Cu 3 o 7-δ thin films, P.X.Zhang et al., Appl.Phys.Lett., Vol.84, No.21, 4026(2002)), but the pulse width of its photoresponse is on the order of ms, so it cannot be used to detect and measure laser pulses Pulse laser waveform with width less than ms

Method used

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  • Fast response broad band laser detector made by oxide heterojunction material
  • Fast response broad band laser detector made by oxide heterojunction material
  • Fast response broad band laser detector made by oxide heterojunction material

Examples

Experimental program
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Effect test

Embodiment 1

[0023] refer to figure 1 , to prepare a laser detector with a two-layer structure of doped strontium niobate titanate-doped lanthanum manganate. The following is combined with the specific preparation process to describe in detail the structure of the fast-response broadband laser detector made of oxide heterojunction materials in the present invention. To explain:

[0024] Laser molecular beam epitaxy equipment is selected, and the substrate is 1×1cm 2 SrNb 0.01 Ti 0.99 o 3 Doped strontium niobate titanate 1, on which a 300nm thick La 0.7 Sr 0.3 MnO 3 Photoresponsive material layer 2, forming La 0.7 Sr 0.3 MnO 3 / SrNb 0.01 Ti 0.99 o 3 Two-layer oxide heterostructure samples, with 1×0.5cm 2 La 0.7 Sr 0.3 MnO 3 / SrNb 0.01 Ti 0.99 o 3 The sample is used as the detector core; the second electrode 4 of about φ2mm is welded on the surface of strontium niobate titanate doped with indium, and the second electrode 4 of about φ2mm is welded on the surface of La 0.7 ...

Embodiment 2

[0028] Using laser molecular beam epitaxy equipment, on SrNb with a diameter of φ25mm 0.1 Ti 0.9 o 3 Direct epitaxial growth of 100 nm thick La on substrate 1 0.7 Sr 0.3 MnO 3 Thin film photoresponsive material layer 2, prepared La 0.7 Sr 0.3 MnO 3 / SrNb 0.1 Ti 0.9 o 3 The two-layer heterostructure sample was used as a chip, and a sample with a diameter of φ25mm was used as a chip, and the chip was deposited on La by magnetron sputtering. 0.7 Sr 0.3 MnO 3 The outer circle of the thin film 2 prepares a silver electrode 3 with a width of 0.5mm, SrNb 0.1 Ti 0.9 o 3 A circular silver electrode 4 with a diameter of 10 mm is prepared in the center of the substrate 1, and the assembly is the same as that of the laser detector with a two-layer structure prepared in Example 1.

Embodiment 3

[0030] Select laser molecular beam epitaxy device for use, make according to embodiment 1, in 1 * 1cm 2 SrNb 0.005 Ti 0.995 o 3 800nm ​​thick La was epitaxially grown on substrate 1 0.95 Ba 0.05 MnO 3 Thin film photoresponsive material layer 2, forming La 0.95 Ba 0.05 MnO 3 / SrNb 0.005 Ti 0.995 o 3 Two-layer heterostructure chip, in La 0.95 Ba 0.05 MnO 3 One edge of the thin film layer is vacuum-evaporated with a 0.5mm wide platinum first electrode 3, and the rest is the same as the structure of the fast-response broadband laser detector made of oxide heterojunction materials prepared according to Example 1.

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Abstract

The invention relates to a rapid response wide frequency channel laser detector made of oxide heterogeneous junction material, comprising: a strontium titanic niobate-doped substrate and a lanthanum manganate-doped film layer epitaxially grown on the substrate, thus forming a Nb doped -lanthanum manganate doped oxide heterogeneous junction; or expitaxially growing an insulating layer on the strontium titanic niobate-doped mono-crystalline substrate, and expitaxially growing a lanthanum manganate- doped film on the insulating layer, thus forming a strontium titanic niobate doped-insulating layer-lanthanum manganate doped oxide heterogeneous junction; the first electrode is arranged on the lanthanum manganate-doped film, the second electrode is arranged on the substrate, and the two electrodes are connected with one end of an electrode lead each, and one end of one electrode lead and one end of the other electrode compose a signal output end. As the light irradiates the laser detector, it directly generates a voltage signal without any auxiliary power supply and electronic circuit. Its response waveband ranges from ultraviolet to far infrared, able to respond to fly-second wide laser pulse, and the voltage pulse generated by the laser pulse has front edge less than 1.5ns, half width less than 2ns and full width equal to only several ns.

Description

technical field [0001] The invention relates to a laser detector, in particular to a fast-response broadband laser detector made of oxide heterojunction materials. Background technique [0002] The detection of laser energy, power, pulse width and waveform is not only very important for laser devices and scientific research, but also has a very wide range of applications in military, national defense, production and life. Although people have developed many different types of laser detectors such as pyroelectricity, photoelectricity, pyroelectricity, etc., the work for novel laser detectors is still people's interest and ongoing work, and the applicant is also in this regard Obtained the following patents for laser detectors, such as patent number: ZL89202869.6; patent number: ZL89220541.5; patent number: ZL90202337.3, patent number: ZL90205920.3; Made of electrical materials, the photoresponse of the detector is not fast enough, and the response band is not wide enough. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42G01J11/00
Inventor 吕惠宾黄延红何萌刘立峰周岳亮金奎娟陈正豪程波林杨国桢
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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