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69results about How to "Has a bendable" patented technology

Flexible strain transducer based on carbon nanofiber yarn woven fabric and preparation method thereof

The invention relates to a flexible strain transducer based on carbon nanofiber yarn woven fabric and a preparation method thereof. The preparation method includes the following steps: uniformly spreading a polymer solution or a liquid polymer, and drying the polymer solution or the liquid polymer to prepare base film; connecting the carbon nanofiber yarn woven fabric with extraction electrodes, infiltrating the carbon nanofiber yarn woven fabric into the polymer solution or the liquid polymer, placing the carbon nanofiber yarn woven fabric on the base film, and performing drying treatment; applying the polymer solution or the liquid polymer to the surface of the carbon nanofiber yarn fabric once, and preparing the flexible strain transducer based on the carbon nanofiber yarn woven fabricthrough drying. Final products include the carbon nanofiber yarn woven fabric, two extraction electrodes communicating with the carbon nanofiber yarn woven fabric, and polymer film covering the upperand lower surface of the carbon nanofiber yarn woven fabric. A sensitivity coefficient of is 30-200 when cyclic stretch is performed at elongation ranging from 0 to 5-12%; and a linear correlation coefficient is more than or equal to 0.995 when the elongation is 9% or below when stretch is performed. The preparation method is simple in a process, and low in cost.
Owner:NANTONG TEXTILE & SILK IND TECH RES INST +1

Thinned energy storing device and manufacture process thereof

ActiveCN103824997AHigh electrochemical conversion rateFacilitate integration and applicationPrimary cell manufactureElectrode manufacturing processesFilm materialEnergy conversion efficiency
The invention relates to a thinned energy storing device and a manufacture process thereof. The thinned energy storing device sequentially comprises a lower encapsulating layer, a collector layer, a positive layer, an isolation layer, a negative layer and an upper encapsulating layer from bottom to top, wherein the lower encapsulating layer and the upper encapsulating layer are made of barrier thin-film materials; the collector layer is made of a conducting material; the positive layer is prepared from inorganic active slurry with oxidizability; the isolation layer is made of specialty paper or a plastic film with electrical insulation property; the negative layer is made of a metal film material with reduction property. Compared with the prior art, the thinned energy storing device has the advantages that the process is more simplified, the manufactured thinned energy storing device has no internal pressure and high negative material activity, the electric capacity and the unit area capacity of the thinned energy storing device are improved, and besides, the electrodes and the isolation layer are positioned at the same axis, so that the connection with an energy dissipation device is facilitated, and the energy conversion efficiency is improved.
Owner:江苏恩福赛柔性电子有限公司

Method for preparing transparent conductive film and transparent hetero-junction on flexible substrate

The invention discloses a method for preparing a transparent conducting film and a transparent heterojunction on a flexible substrate, which comprises the following steps: an amorphous film made of n-TCO and p-TCO materials is deposited on the flexible substrate within the temperature range of room temperature to substrate softening temperature through adopting vacuum methods, such as a pulsed laser deposition method, a sputtering method, and the like and a non-vacuum filming preparation method, such as a chemical solution layer, and the like, or a P-TCO film and an n-TCO film are deposited in sequence to prepare the transparent p-n junction. The method is characterized in that through in-situ or ectopic laser annealing, the amorphous film made of n-TCO and p-TCO materials is caused to crystallize or all layers of films of the transparent p-n junction can be caused to crystallize through the laser annealing. The crystallization and the better photoelectric property of the n-TCO film, the P-TCO film and the transparent p-n junction prepared on the flexible substrate can be ensured through making use of the laser annealing technique. The defects that the flexible substrate is not resistant of high-temperature treatment and the TCO film and the heterojunction on various monocrystal and hard substrates can not be curled and folded and is heavy in quantity, and the like can be overcome. And the new use of various TCO films and the transparent p-n junction can be developed.
Owner:ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI

Photoelectric detector and manufacturing method thereof

The invention provides a photodetector and a manufacturing method thereof, wherein a photodetector with a vertical structure is manufactured by sequentially arranging a first electrode, a hole transport layer, a photosensitive active layer containing perovskite, an electron transport layer and a second electrode on a substrate from bottom to top. A PN junction is formed between the perovskite in the photosensitive active layer and the electron transport layer, thus the built-in electric field is constructed, thereby separating holes and electrons generated by the photosensitive active layer from each other only by applying a bias voltage of 0 V between the first electrode and the second electrode, The low driving voltage of the photodetector is realized, which is beneficial to the reduction of the power consumption of the product, and the hole transport layer and the electron transport layer are arranged above and below the photosensitive active layer respectively. The vertical arrangement mode can accelerate the transmission of holes and electrons, thereby increasing the photocurrent of the photodetector and further improving the photoresponsivity of the device. At that same time,each layer of the photodetector can be a flexible material to meet the requirements of portability and versatility.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT

Composite negative electrode material, negative electrode, lithium ion battery and preparation method

The invention particularly discloses a composite negative electrode material, a negative electrode, a lithium ion battery and a preparation method. The preparation method comprises the following steps: carbonizing foam resin of melamine or derivatives thereof to obtain a matrix, and dipping the matrix into molten lithium to obtain the composite negative electrode material. The nitrogen-containingfunctional groups are uniformly distributed in the foam carbon matrix provided by the invention, so that the foam carbon matrix has relatively strong binding energy to lithium, lithium ion flow can behomogenized in a lithium ion deposition process, uniform deposition of metal lithium is facilitated, and formation of nucleation sites for lithium dendritic crystal growth is avoided; meanwhile, thefoam carbon matrix of the three-dimensional network structure further has a high specific surface area, the local current density can be reduced, the deposition uniformity of metal lithium in the matrix is further improved, the hollow structure of the foam carbon matrix serves as an ion transmission channel, carriers are provided in the lithium deposition process, and aggregation of lithium ions/electrons is dispersed. The continuous growth of the lithium dendrites is favorably relieved, so that the effects of inhibiting the lithium dendrites and buffering the volume expansion are achieved.
Owner:HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY

Logic device, logic assembly and manufacturing method of logic device

The invention provides a logic device and a manufacturing method thereof. The logic device comprises a substrate, a heavy metal layer, a ferromagnetic layer, a multiferroic layer and an oxide layer, wherein the heavy metal layer comprises a cross structure of which the outer side is provided with a corresponding electrode; and the resistance of the heavy metal layer is changed by changing the direction of an electric field applied between the oxide layer and the heavy metal layer. Specifically, the substrate is a flexible substrate, and has the advantages of being resistant to extrusion, bendable and the like; and the control of the electric field on a critical current of spin-orbit coupling is realized at the room temperature through a multiferroic material, so that a spin-orbit coupling signal is effectively controlled. The effect of the logic device is changed by using different oxidation state interfaces (oxide layers), and the control of an input voltage on the critical current of the spin-orbit coupling makes a difference, so that an N-type or P-type logic operation function can be achieved; the light, portable and low-power logic device can be obtained; and logic devices can also be combined to obtain a logic assembly integrating N-type and P-type logic functions.
Owner:叶建国
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