Fe-doped ZnO nano-film as well as preparation method and application thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SHAANXI SCI TECH UNIV
- Publication Date
- 2021-02-19
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Abstract
Description
【Technical field】
[0001] The invention belongs to the technical field of metal oxide semiconductor materials, and in particular relates to an Fe-doped ZnO nanometer film and a preparation method and application thereof. 【Background technique】
[0002] As an n-type semiconductor, zinc oxide (ZnO) is widely used in the photocatalytic degradation of organic dyes because of its wide bandgap of 3.37eV, high exciton binding energy of about 60meV, anisotropic growth and environmental protection. catalyst of light. However, ZnO inhibits the photocatalytic efficiency due to the rapid recombination of photogenerated electron-hole pairs. For nanomaterials, doping can significantly change its properties, because the number of atoms after doping is small and most of them are on the surface of nanomaterials.
[0003] At present, the synthesis methods of ZnO nanomaterials include evaporation method, sol-gel method, atomic layer deposition method, vapor phase deposition method, spray pyro...