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Method for preparing transparent conductive film and transparent hetero-junction on flexible substrate

A technology of transparent conductive film and flexible substrate, which is applied in the direction of circuits, electrical components, nonlinear optics, etc., can solve the problems of high process precision, difficulty, and growing p-TCO film, etc., and achieve good photoelectric performance and light weight , to overcome the effect of high temperature treatment

Inactive Publication Date: 2009-05-06
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is novel, requires high precision, and is difficult. At present, laser annealing technology has been used to crystallize n-TCO thin films on flexible substrates and to deposit p-CuCrO on quartz glass substrates at room temperature. 2 / n-ZnO heterojunction and the use of in-situ laser annealing technology to crystallize the report of the film, but there is no report of using laser annealing technology to grow p-TCO film and transparent p-n junction on a flexible substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] N-type TCO targets such as AZO, ITO, etc. prepared or purchased by solid-state reaction methods, sol-gel methods, etc. and p-type TCO targets such as SrCu doped with elements such as Mg, Ca, and K 2 o 2 , CuAlO 2 , CuCrO 2 、CuYO 2 、CuInO 2 Deposit on flexible substrates such as polyethylene terephthalate, polycarbonate, polypropylene, polyimide, etc. by pulsed laser sputtering or magnetron sputtering and other film preparation methods, and the substrate temperature is controlled at room temperature To the softening temperature range of the substrate, while adjusting the experimental conditions such as the film deposition atmosphere and laser energy. In situ or heterotopic crystallization of thin films by laser annealing technology, the energy range of the controlled annealing laser is 30-170mJ / cm 2 . In order to obtain good laser annealing quality, the laser spot energy can be evenly distributed by beam homogenization technology. In addition, the two-dimensional ...

Embodiment 2

[0022] will be composed of Cu(OOCH) 2 4H 2 O, Sr(CH 3 CO 2 ) 2 , CaCO 3 or K 2 CO 3 Different concentrations of SrCu prepared from other raw materials 2 o 2 The precursor sol is used to obtain amorphous films on flexible substrates such as polyethylene terephthalate, polycarbonate, polypropylene, and polyimide by chemical solution methods such as spray pyrolysis, spin coating, or pull-up. The obtained amorphous film is placed in a cavity with a certain degree of vacuum or under a protective atmosphere, and the laser for film annealing is irradiated to the surface of the film through a quartz window. The energy of the laser spot is evenly distributed through the beam homogenization technology; the two-dimensional scanning of the spot on the surface of the film is realized by the automatic control device to crystallize all the different parts of the film. According to the thickness of the required film, repeat the above preparation process 3-4 times.

Embodiment 3

[0024] A single-layer p-type (or n-type) TCO thin film is prepared by pulsed laser sputtering, magnetron sputtering or chemical solution method, and the thin film is crystallized by laser annealing. The n-type (or p-type) TCO thin film is prepared on the p-type (or n-type) TCO thin film by pulse laser sputtering method, magnetron sputtering method or chemical solution method, and the thin film is crystallized by laser annealing. In this way, a transparent p-n junction is obtained.

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Abstract

The invention discloses a method for preparing a transparent conducting film and a transparent heterojunction on a flexible substrate, which comprises the following steps: an amorphous film made of n-TCO and p-TCO materials is deposited on the flexible substrate within the temperature range of room temperature to substrate softening temperature through adopting vacuum methods, such as a pulsed laser deposition method, a sputtering method, and the like and a non-vacuum filming preparation method, such as a chemical solution layer, and the like, or a P-TCO film and an n-TCO film are deposited in sequence to prepare the transparent p-n junction. The method is characterized in that through in-situ or ectopic laser annealing, the amorphous film made of n-TCO and p-TCO materials is caused to crystallize or all layers of films of the transparent p-n junction can be caused to crystallize through the laser annealing. The crystallization and the better photoelectric property of the n-TCO film, the P-TCO film and the transparent p-n junction prepared on the flexible substrate can be ensured through making use of the laser annealing technique. The defects that the flexible substrate is not resistant of high-temperature treatment and the TCO film and the heterojunction on various monocrystal and hard substrates can not be curled and folded and is heavy in quantity, and the like can be overcome. And the new use of various TCO films and the transparent p-n junction can be developed.

Description

technical field [0001] The invention belongs to a method for preparing a transparent conductive film with a flexible substrate and a heterojunction at low temperature. Background technique [0002] With the development of science and technology and the continuous improvement of people's living standards, high-resolution, large-size flat-panel displays, solar cells, energy-saving infrared reflective films, electrochromic windows, etc. are widely used. ) films are in increasing demand. Currently widely used TCO films are mainly n-type, including In 2 o 3 : Sn(ITO), SnO 2 : F(FTO), ZnO: Al(AZO), etc. The research on p-type TCO materials was relatively slow until Professor Kawazoe in Japan reported a new p-type TCO thin film material—CuAlO with a delafossite structure in 1997. 2 , which triggered a global research boom on p-type TCO thin film materials. In the following years, more p-type TCO materials were reported successively, such as CuCrO 2 , CuGaO 2 、CuYO 2 、CuInO...

Claims

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Application Information

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IPC IPC(8): H01L21/34H01L21/36H01L21/428H01L33/00H01L31/18H01S5/32G01N21/00G02F1/15
CPCY02P70/50
Inventor 董伟伟方晓东邵景珍邓赞红陶汝华
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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