48 results about "Delafossite" patented technology

Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO₂ powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO₂, using targets made of the CuBO₂ powders. The CuBO₂ thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO₂ thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO₂ as a channel layer and thin film solar cells with CuBO₂ p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO₂ in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

The invention discloses a low-temperature preparation method for a CuFeO2 crystal material of a delafossite structure, in particular to a low-temperature hydrothermal synthesis method for rapidly preparing the CuFeO2 nanocrystalline material of the delafossite structure. The method comprises the steps that parameters including reaction precursor components, the reaction temperature and the filling rate of a reaction solution in a hydrothermal reaction kettle are regulated and controlled through a low-temperature hydrothermal reaction, reactants including Cu(NO3)2 and FeCl2 react for 12 hours to 48 hours at the temperature ranging from 100 DEG C to 160 DEG C, and then, after a reaction product is processed through centrifugal cleaning and dried, the nanoscale CuFeO2 crystal material is obtained. The low-temperature preparation method for the CuFeO2 crystal material of the delafossite structure is easy to operate, the technological parameters are easy to control, no pollution is caused, the yield is high, and the method can be widely used for photoelectricity functional devices such as transparent conducting oxide.

The invention relates to a plane structure perovskite solar cell and a preparation method thereof. The cell comprises a hole transport layer and a light capture layer, wherein the light capture layer is prepared from an MXZ3-type perovskite material; M is selected from Cs<+>, CH3NH3<+>, CH3CH2NH3<+>, CH(NH2)2<+> or a mixture thereof; X is selected from Pb<2+>, Sn<2+>, Ge<2+> or a mixture thereof; Z is selected from Cl<->, Br<->, I<-> or the mixture thereof; the hole transport layer is prepared from a doped or un-doped ADO2-type semiconductor material with a p-type delafossite structure; A is selected from Cu or Ag; D is selected from one or more of Cr, Ga, Sc, In, Y or Fe; and a doping element is selected from one or two of Mg, Ca, Sr or Ga. A film of the hole transport layer provided by the invention has good electrical conductivity, proper energy level position, high transmittance and low cost; a solar cell device with excellent and stable performance can be obtained; and propulsion of industrialization of the perovskite solar cell is facilitated.

The invention relates to a preparation method of an AgAlO2/TiO2 photocatalytic material. The preparation method comprises the following steps: 1, preparing TiO2 through a sol-gel method; 2, preparing NaAlO2 through the sol-gel method; 3, preparing AgAlO2/TiO2 through an ion-exchange method. According to the invention, P-type delafossite type AgAlO2 and n-type TiO2 are compounded to form an alloplastic photocatalytic material, so that under the condition of improving the yield of photoinduced electron-hole pairs of the material, the electron-hole pairs can be effectively prevented from compounding again, the quantum yield is improved, and then visible light catalytic activity better than that of single AgAlO2 can be represented. The preparation method provided by the invention is mild in reaction conditions, easy to operate, and good in repeatability; and a prepared product is high in crystallinity and uniform in particle size, and the particle diameter is about 100 to 200 nm.

The present invention provides a method for efficiently generating oxygen by electrolyzing water using a copper delafossite compound as an anode. First, in the present invention, a water electrolysis device is prepared. The water electrolysis device comprises a container, a power supply, an anode, a cathode; and an aqueous electrolytic solution. The anode and the cathode are in contact with the aqueous electrolytic solution. The anode has a copper cobalt delafossite compound represented by a chemical formula CuCoO₂. The copper cobalt delafossite compound is in contact with the aqueous electrolytic solution. Then, an electric potential difference is applied between the cathode and the anode using the power supply to generate oxygen on the anode due to electrolysis of water which occurs on the copper cobalt delafossite compound.

The invention relates to a delafossite structure CuFeO2 powder and a preparation method and application thereof. The preparation method comprises the following steps: S1: dissolving bivalent copper salt and trivalent iron salt, adding citric acid and PEG, stirring and dissolving, adjusting the PH value to 2 to 3 with NH3.H2O to obtain a reaction precursor; and S2: drying the reaction precursor, grinding the precursor into powder and performing annealing treatment, wherein the process of the annealing treatment is: in an air atmosphere, raising the temperature to 900 DEG C to 1200 DEG C at a heating rate of 5 DEG C to 15 DEG C/min, keeping the temperature for 4 hours and 6 hours, and then cooling in an inert atmosphere. The preparation method provided by the invention has the advantages ofshort cycle, high purity and suitability for mass preparation and industrial production; and the prepared CuFeO2 has high hole mobility, good photochemical stability and high conduction band energy.

The invention discloses a P-type oxide semiconductor thin-film transistor and a preparing method thereof. The thin-film transistor comprises the components of a heavily doped silicon substrate which is used as a gate electrode; an insulating layer which is an insulating oxide film and is arranged on the gate electrode; an active layer which is a P-type delafossite-structured oxide film and is arranged on the insulating layer; a source electrode and a drain electrode which are Cu films and are arranged on the active layer. The P-type delafossite-structured oxide film is made of CuAlO2, CuInO2 or CuGaO2. The P-type delafossite-structured oxide film which is used as the active layer represents a stable P-type semiconductor characteristic, thereby realizing large valence band maximum frequency bandwidth and high hole mobility. The p-type oxide semiconductor thin-film transistor has a simple structure and furthermore the preparing process of the p-type oxide semiconductor thin-film transistor is compatible with microelectronic technology. Furthermore the p-type oxide semiconductor thin-film transistor has advantages of high chemical stability and excellent electrical property. The p-type oxide semiconductor thin-film transistor has a wide application prospect in organic light-emitting diode displaying, complementary oxide semiconductor electronic circuits and transparent electronic circuits.

The invention relates to a preparation method of a nanoscale infrared transparent conductive film, in particular to a preparation method of an infrared transparent conductive film which is used in the infrared window and is transparent and conductive. The preparation method selects sapphire or silicon (111) as a substrate material for thin film growth; the preparation method of the thin film mainly adopts a high-vacuum magnetron sputtering technology; a co-target sputtering method is provided, wherein the target materials are respectively a Cu2O target and a Al2O3 target, or a Cu target and an Al target; and the obtained thin film is annealed in nitrogen at 500-600 DEG C for 3-5h to complete a preliminary chemical reaction, and then the thin film is annealed at a high temperature of 1000-1200 DEG C for 3-5h to completely react and crystallize. According to the preparation method, by adjusting the power of the two targets to control the compositions of the thin film, the problem of the one-target sputtering method that the ratio of Cu to Al can not be accurately controlled to be 1:1 so as to generate various oxides is solved; and the two-step annealing mode is adopted to avoid the loss of the related copper oxides caused by direct high-temperature annealing, thus the quality of the thin film can be increased.

The invention discloses a preparation method of a CuFeO2 microcrystalline material of a high-purity 3R delafossite structure. The preparation method comprises the steps: adding Cu(NO3)2.3H2O and Fe(NO3)3.9H2O into deionized water, performing magnetic stirring for dissolution so as to obtain a mixed solution, adding a NaOH solution dropwise to the mixed solution, then performing ultrasonic stirringand magnetic stirring sequentially, then adding n-propionaldehyde dropwise, keeping magnetic stirring until formation of a colloidal suspension, adding the colloidal suspension to a reaction vessel,performing a reaction at 100-180 DEG C for 6-24 h, cooling the kettle body naturally to room temperature after completion of the reaction, opening the kettle body, taking out the reaction product, washing the reaction product, and performing drying so as to obtain the CuFeO2 microcrystalline material of a high-purity 3R delafossite structure. The preparation method has simple operation and easilycontrollable process parameters, no pollution, high yield, completely developed grains and uniformly distributed particle size are achieved, the product can be widely applied to photocatalytic decomposition of water for hydrogen production, degradation of pollutants, photocatalytic reduction of CO2, transparent conductive oxides and ferromagnetic materials and other materials and devices with photoelectric conversion functions.

The present invention provides a method for generating oxygen. The method comprises (a) preparing a water electrolysis device comprising a container storing an electrolyte aqueous solution; an anode which is in contact with the electrolyte aqueous solution and includes at least one silver delafossite compound selected from the group consisting of a silver cobalt delafossite compound represented by a chemical formula AgCoO₂ and a silver rhodium delafossite compound represented by a chemical formula AgRhO₂; a cathode which is in contact with the electrolyte aqueous solution; and a power supply, wherein the at least one silver delafossite compound is in contact with the electrolyte aqueous solution, and (b) applying an electric potential difference between the cathode and the anode using the power supply to generate oxygen on the anode due to electrolysis of water which occurs on the at least one silver delafossite compound.

The invention discloses delafossite oxide, a low-temperature fuel cell material and a preparation method. The delafossite oxide is CuM1-xAxO2, 0x0.3 or is compounded proportionally by one and more than one of the above materials, M is trivalent metal ion of B, Y, Cr, Al, Fe, La or In, and A is plus-divalent metal ion of Mg, Ca, Ni, Sr and Zn. A composite material of the delafossite oxide and rare earth oxide is used for the low-temperature oxide fuel cell for the first time. In a temperature interval from 300 DEG C to 600 DEG C, a cell successfully demonstrates and outputs current density of KmA and power density reaching more than 800mw (550C). A new path is provided for developing new-generation commercial efficient fuel cell products.

The invention discloses a room temperature ammonia gas sensor using a p-type delafossite structure oxide as a sensitive material, and a preparation method thereof. According to the present invention,the resistive room temperature ammonia gas sensor with excellent performance is constructed by using the p-type delafossite structure AgAlO2 as the sensitive material of the ammonia gas sensor; by completely utilizing the advantages of high sensitivity, low cost, simple device, easy integration and easy on-site continuous detection of the semiconductor resistor type sensing material and the characteristic of high selectivity of AgAlO2 to ammonia gas at a room temperature, the resistive sensor with characteristics of working at a room temperature, sensitive response to ammonia gas (the detection lower limit can reach 1000000-level), good selectivity, good stability, economy and environmental protection can be constructed, the good sensitive material is provided for ammonia sensors, and thenew application field is provided for P-type wide band gap delafossite structure oxides.

The invention discloses a method for quickly preparing a single-phase delafossite structure CuFeO2 microcrystalline material. The method comprises the steps that Cu(NO3)<2>.3H2O and Fe(NO3)<3>.9H2O are added into deionized water according to the mole ratio of 1:1, magnetic stirring for dissolving is conducted, and thus a mixed solution is obtained; a NaOH solution is dropwise added into the mixedsolution drop by drop, and then ultrasonic stirring and magnetic stirring are conducted in sequence; n-propanal is added into the solution dropwise, and then magnetic stirring is continued till colloidal suspension is formed; and the colloidal suspension is added into a microwave digestion tank, the filling rate of the colloidal suspension is 10-35%, microwave heating is conducted after sealing, after reaction is completed, a reaction product is naturally cooled to the room temperature, the microwave digestion tank is opened to take the reaction product out, and the reaction product is washedand dried to obtain the single-phase delafossite structure CuFeO2 microcrystalline material. According to the method, the reaction time is extremely short, energy consumption is less, operation is easy, technological parameters are easy to control, pollution is avoided, the yield is high, grains are developed completely, particle size distribution is even, and the single-phase delafossite structure CuFeO2 microcrystalline material can be widely applied to the fields of photocatalysis, photovoltaics, transparent conductive oxide, ferroelectric and the like.

Provided is a novel exhaust gas purification catalyst, which uses a Cu-based delafossite oxide, capable of increasing the exhaust gas purification performance compared to the case of using the Cu-based delafossite oxide alone. Proposed is an exhaust gas purification catalyst comprising a delafossite-type oxide represented by a general formula ABO₂ and an inorganic porous material, wherein Cu is contained in the A site of the general formula of the delafossite oxide, one or two or more elements selected from the group consisting of Mn, Al, Cr, Ga, Fe, Co, Ni, In, La, Nd, Sm, Eu, Y, V, and Ti are contained in the B site thereof, and Cu is contained in 3 to 30% relative to the total content (mass) of the delafossite-type oxide and the inorganic porous material.

In a method of manufacturing a catalyst material to be used for burning carbon, a hydrothermal treatment is applied to NaAlO₂ and Ag₂O at a temperature of 150° C. or more to obtain delafossite-type AgAlO₂ containing an Ag compound, and an excess amount of the Ag compound is removed by washing the delafossite-type AgAlO₂ containing the Ag compound. As a result, a manufacturing method of a catalyst material that can burn soot at low temperature can be provided without corroding a honeycomb structure for supporting.

The invention discloses a delafossite structure material, a preparation method thereof and a perovskite solar cell. The delafossite structure material provided by the invention comprises Mg-doped CuGaO2, the delafossite structure material is in the shape of a wafer or a cylinder microscopically, the diameter of the delafossite structure material ranges from 3 nm to 100 nm, and the thickness of thedelafossite structure material ranges from 1 nm to 20 nm. The delafossite structure material can be further used as a hole transport layer to be applied to the perovskite solar cell. The hole transport layer can well solve the problem that the long-term stability of a formal perovskite solar cell is not satisfying. In addition, when the hole transport layer is applied to a trans-perovskite solarcell, the device efficiency of the trans-perovskite solar cell can be further improved.