This invention belongs to the field of
diffusion couple preparation and
phase diagram determination technology, specifically relating to a Co-Hf-Ta ternary
diffusion couple and its preparation method. The method uses pure
metal blocks of Co, Hf, and Ta with a purity of 99.95% as raw materials. After
wire cutting via
electrical discharge machining, the pressing interface is mechanically ground and polished. Subsequently, binary pressing is performed using a
graphite mold and
spark plasma sintering (SPS) process. Then, ternary pressing is performed using the binary pressed block as an intermediate layer to obtain a Co-Hf-Ta ternary
metal block. Afterward, the ternary
metal block is coated with a Ta sheet and placed in a
quartz tube, subjected to
diffusion annealing at 1173 K for 30 days, and then water quenched to obtain the Co-Hf-Ta ternary diffusion couple. The diffusion couple sample is characterized after metallographic hot mounting,
grinding, and
polishing. The results show that the Co-Hf-Ta ternary diffusion couple prepared by this invention has a tight interface, a continuous
diffusion layer, and a stable structure. It can simultaneously obtain diffusion and
phase equilibrium information of Co-Hf, Co-Ta, and Hf-Ta systems, and is suitable for
phase diagram construction and diffusion behavior research of Co-Hf-Ta systems.