Delafossite structure material and preparation method thereof, and perovskite solar cell

A technology of solar cells and structural materials, applied in chemical instruments and methods, circuits, photovoltaic power generation, etc., to achieve the effect of compound reduction, excellent conductivity and thermal stability, and device efficiency improvement

Pending Publication Date: 2020-09-18
SHENZHEN INST OF ADVANCED TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem of the long-term stability of the formal perovskite solar cell and the device efficiency of the reverse perovskite solar cell in the above-mentioned prior art, the present invention provides a delafossite structure material doped with metal elements, and It further provides its preparation method and its application in perovskite solar cells

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  • Delafossite structure material and preparation method thereof, and perovskite solar cell
  • Delafossite structure material and preparation method thereof, and perovskite solar cell
  • Delafossite structure material and preparation method thereof, and perovskite solar cell

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preparation example Construction

[0042] 2. Some embodiments of the present invention provide a method for preparing the above-mentioned delafossite structural material, comprising the steps of:

[0043] (1) Dissolving copper nitrate, gallium nitrate, magnesium nitrate and surfactant in deionized water respectively to form a mixed first solution. Alternatively, the surfactant, copper nitrate and magnesium nitrate are sequentially added to the gallium nitrate solution to form a first mixed solution.

[0044] In the above first solution, the concentrations of copper nitrate, gallium nitrate, magnesium nitrate and surfactant are all in the range of 0.01mol / L-0.1mol / L. When the concentration of each substance in the first solution is lower than 0.01 mol / L, the subsequent reaction will be insufficient. When the concentration of any substance in the first solution is higher than 0.1 mol / L, the size of the subsequent reaction product is large and inhomogeneous.

[0045] The aforementioned nitrates may be anhydrous or...

Embodiment 1

[0085] Preparation of Mg@CuGaO 2 Material.

[0086] Weigh 150mg of Cu(NO 3 ) 2 ·3H 2 O, 200mg of Ga(NO 3 ) 3 ·H 2 O, 20mg of Mg(NO 3 ) 2 , 60 mg of sodium dodecylsulfonate and 68 mg of NaOH were respectively dissolved in 3 mL of deionized water to form a clear first solution with a pH value of 3.5.

[0087] The above solution was mixed and stirred for 2 hours until a uniform solution was obtained, 3 mL of polyethylene glycol was added to the uniform solution, and the stirring was continued until uniformly mixed to form a second solution.

[0088] The obtained solution was poured into a hydrothermal reaction kettle, and then the reaction kettle was placed in an oven at 230° C. for 10 h.

[0089] The reaction product was taken out, washed with deionized water, diluted ammonia water with a concentration of 0.05 mol / L, and absolute ethanol in sequence, and then dried to obtain a powder product.

[0090] The obtained powder product was confirmed to be Mg@CuGaO by X-ray di...

Embodiment 2

[0092] Preparation of Mg@CuGaO 2 nanomaterials.

[0093] Weigh 200mg of Cu(NO 3 ) 2 ·3H 2 O, 250mg of Ga (NO 3 ) 3 ·H 2 O, 10mg of Mg(NO 3 ) 2 , 40 mg of sodium dodecylsulfonate (SDS) and 50 mg of NaOH were respectively dissolved in 5 mL of deionized water to form a clear first solution with a pH value of 3.

[0094] The above solution was mixed and stirred for 4 hours until a uniform solution was obtained, 2 mL of ethylene glycol was added to the uniform solution, and the stirring was continued until uniformly mixed to form a second solution.

[0095] The obtained solution was poured into a hydrothermal reaction kettle, and then the hydrothermal reaction kettle was placed in an oven at 200° C., and reacted for 50 hours to obtain a solid-liquid two-phase reaction product.

[0096] Take out the solid phase reaction product, wash the solid phase reaction product with deionized water, diluted ammonia water with a concentration of 0.01mol / L, and absolute ethanol in sequen...

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Abstract

The invention discloses a delafossite structure material, a preparation method thereof and a perovskite solar cell. The delafossite structure material provided by the invention comprises Mg-doped CuGaO2, the delafossite structure material is in the shape of a wafer or a cylinder microscopically, the diameter of the delafossite structure material ranges from 3 nm to 100 nm, and the thickness of thedelafossite structure material ranges from 1 nm to 20 nm. The delafossite structure material can be further used as a hole transport layer to be applied to the perovskite solar cell. The hole transport layer can well solve the problem that the long-term stability of a formal perovskite solar cell is not satisfying. In addition, when the hole transport layer is applied to a trans-perovskite solarcell, the device efficiency of the trans-perovskite solar cell can be further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a delafossite structural material, a preparation method thereof, and a perovskite solar cell. Background technique [0002] The organic / inorganic hybrid metal halide perovskite solar cell is a new technology in the photovoltaic field that appeared in 2009. It was selected as one of the top ten scientific breakthroughs in 2013 by the American "Science" magazine, and is considered by authorities as a potential important photovoltaic technology. After ten years of development, the efficiency of perovskite solar cells has been increased to 25.2%, catching up with compounds such as polycrystalline silicon solar cells, copper indium gallium selenide (CIGS) and cadmium telluride (CdTe) in terms of efficiency. Thin film solar cells. As a result, it has become the most popular technology branch in the next generation of photovoltaic technology, and has attracted extensiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46C01G15/00
CPCC01G15/00C01P2002/72C01P2004/03C01P2004/04C01P2004/64H10K30/15H10K30/10H10K2102/00Y02E10/549
Inventor 王欢郑雪李江宇
Owner SHENZHEN INST OF ADVANCED TECH
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