Heterojunction semiconductor structure based on gallium oxide and semiconductor device

Abstract

The invention discloses a heterojunction semiconductor structure based on gallium oxide, which structurally comprises at least one gallium oxide base layer and at least one delafossite layer, whereinthe gallium oxide base layer is provided with a plurality of contact surfaces; and the delafossite layer and the gallium oxide base layer form a heterojunction structure through the contact surfaces.By means of the structure, the matching of the forbidden bandwidth, the matching of the conduction band and the matching of the valence band are achieved, and the current transport capacity of the structure is improved; besides, the heterogeneous PN junction structure also realizes the matching of a crystal structure, avoids the formation of a large number of dislocation defects on the contact surface of the heterogeneous PN junction, and improves the forward transport performance of the PN junction, the on-resistance of a device adopting the structure and the performance stability of the device; and finally, the preparation process of the delafossite material is simple, the delafossite material can be directly formed by adopting a similar sol-gel method or a hydrothermal synthesis method,the preparation cost and process of the structure are greatly reduced, and large-scale industrial production is easy to realize.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium oxide-based heterojunction semiconductor structure and a device thereof. Background technique [0002] Seeking wider band gap and higher material performance is an important trend in the development of compound semiconductor materials. Gallium oxide (Ga 2 o 3 ) semiconductor has a large forbidden band width (E g ~4.8eV), high breakdown field strength (E br ~8MV / cm), Baliga high quality factor (εμE br 3 ~3444), low growth cost (melting method to produce single crystal substrate) and other outstanding advantages, it is used for next-generation high-voltage high-power devices (such as Schottky barrier diodes (SBD), field effect transistors (MOSFET)), power One of the preferred materials for IC circuits and solar-blind ultraviolet photoelectric (200-280nm band) detectors. [0003] High-voltage and high-power devices have significant power conversion and energy...

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problems of poor band structure matching, poor crystal structure matching, difficult material preparation process, and high preparation cost in the heterogeneous PN junction structure formed by the above-mentioned P-type material and gallium oxide, the present invention proposes a gallium oxide-based Heterojunction semiconductor structures and their devices

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