846results about How to "Reduce the number of processes" patented technology

A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.

According to present invention, system on panel without complicating the process of TFT can be realized, and a light-emitting device that can be formed by lower cost than that of the conventional light-emitting device can be provided. A light-emitting device is provided in which a pixel portion is provided with a pixel including a light-emitting element and a TFT for controlling supply of current to the light-emitting element; a TFT included in a drive circuit and a TFT for controlling supply of current to the light-emitting element include a gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor film, which overlaps with the gate electrode via the gate insulating film, a pair of second semiconductor films formed over the first semiconductor film; the pair of second semiconductor films are doped with an impurity to have one conductivity type; and the first semiconductor film is formed by semiamorphous semiconductor.

A pixel having a structure in which low voltage drive is possible is provided by a simple process. A digital image signal input from a source signal line is input to the pixel through a switching TFT. At this point, a voltage compensation circuit amplifies the voltage amplitude of the digital image signal or transforms the amplitude, and applies the result to a gate electrode of a driver TFT. On-off control of TFTs within the pixel can thus be performed normally even if the voltage of a power source for driving gate signal lines becomes lower.

Methods and apparatuses for dispensing samples or reagents onto a target object are provided. A dispensing position designating section (62) designates the dispensing position on the target object (50), such as a membrane, based on an image of the target object (50) displayed on a monitoring section (60). A dispensing control section (64) positions the target object and the dispensing device relative to each other so that the designated dispensing position on the target object is placed beneath the dispensing device (10) and controls the dispensing operation of the dispensing device (10). A dispensing position information creating section (68) creates dispensing position information about the dispensing position on the target object (50) which is designated by the dispensing position designating section (62) and to which the dispensing operation has been performed and outputs it to the outside.

It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.

Provided is a method for manufacturing a surface acoustic wave apparatus that can reduce degradation of electric characteristics and also reduce the number of manufacturing processes. The method for manufacturing a surface acoustic wave apparatus includes the steps of: forming an IDT electrode on an upper surface of a piezoelectric substrate, forming a frame member surrounding a formation area in which the IDT electrode is formed on the piezoelectric substrate, and mounting a film-shaped lid member on the upper surface of the frame member so as to be joined to the frame member so that a protective cover, used for covering the formation area and for providing a tightly-closed space between it and the formation area, is formed.

A color filter layer covering both a thin film transistor and a pixel electrode which are formed on a lower substrate. A portion of the color filter layer positioned on the thin film transistor serves a protection layer of the thin film transistor and the other portion of the color filter layer serves a conventional color filter layer which were conventionally formed on an upper substrate opposite to the lower substrate. Therefore, the process number for the LCD is decreased and thus the manufacturing cost of the LCD is reduced.

A semiconductor device is provided, which is capable of improving mounting flexibility relatively and increasing general versatility, as well as realizing heat radiation characteristics and low on-resistance. Moreover, the semiconductor device is provided, which is capable of improving reliability, performing processing in manufacturing processes easily and reducing manufacturing costs. Also, the semiconductor device capable of decreasing the mounting area is provided. A semiconductor chip in which an IGBT is formed and a semiconductor chip in which a diode is formed are mounted over a die pad. Then, the semiconductor chip and the semiconductor chip are connected by using a clip. The clip is arranged so as not to overlap with bonding pads formed at the semiconductor chip in a flat state. The bonding pads formed at the semiconductor chip are connected to electrodes by using wires.

The invention provides a method and device for removing processes applied to an Android platform. The method comprises the steps of calculating the memory amount possibly required in a setting time period in the future by conducting statistics on the memory allocation amount in a previous fixed time period and according to the memory allocation amount after the statistics, and selecting the certain processes in a system to be removed according to the calculated memory amount so as to exchange the processes for more free memory to meet the calculated memory amount. The processes can be recovered to be exchanged for the enough memory within a short time, and the requirement of the system for continuous large-memory allocation is met.

A configuration information management server apparatus is provided with a unit collecting configuration information from the device connected to a network, a unit storing the configuration information collected from the device connected to the network, and a unit comparing already stored information with the collected information and reporting in case there is an abnormality. Moreover, the configuration information management server apparatus is provided with a storage unit for configuration information for validation use for temporarily storing configuration information for validation use for the purpose of configuring the network device, a configuration information comparator unit comparing the collected configuration information with the configuration information for validation use, and a configuration information storage unit storing, in case the configuration information collected in the configuration information comparator unit and the configuration information for validation use match, the collected data in a configuration information historical database.

The present invention relates to a mobile communication system and a tunnel management method thereof. In the tunnel management method, tunnel information update request having a user equipment identifier of the user equipment is received at a serving gateway from a mobility managing device when the user equipment performs handoff. Then, tunnel information is updated by changing address information of data destination for all tunnels having the user equipment identifier.

The invention discloses an array substrate, a display panel, a display apparatus and a manufacturing method. The array substrate comprises a display area and a peripheral circuit area around the display area. The display area is provided with a shading layer, a plurality of touch electrode blocks arranged at intervals in an array on the shading layer, and a plurality of touch signal wires. Each signal wire is arranged corresponding to one touch control electrode block, and each touch control signal wire is electrically connected with one touch control electrode block. The touch control signal wires and the shading layer are arranged in the same layer, the touch control signal wires are insulated from the shading layer, and the touch control signal wires and the shading layer are made from the same material in the same manufacturing technology, the process can be simplified, and the work efficiency can be raised.

The bobbin for the bar antenna includes a core supporting portion into which a bar shaped ferromagnetic core is inserted and supported. The core supporting portion is attached to at least one end of the bar antenna formed by the core around which a conductive wire material is wound. The bobbin further includes a conductive wire material fixing portion for fixing the conductive wire material and a core holding portion for sandwiching the core inserted into the core supporting portion from both sides opposing to each other and firmly pressing by a tension force of the conductive wire material wound thereon.

In the preferred embodiment, the invention provides a modified Shortest Path First routing algorithm for use in a heterogeneous network. The routing algorithm is modified to include predetermined heterogeneous characteristics of the network nodes and to take these characteristics into account when calculating the shortest paths. For example, information may be included in the algorithm which identifies heterogeneous network nodes as it calculates shortest paths. Once a node has been identified as heterogeneous, i.e., capable of supporting at least two protocol sets, this information is carried over into subsequent path entries created by the routing algorithm. The algorithm then uses the encapsulation capability identifier in the calculation of the shortest paths by including the cost of auto-tunneling between heterogeneous nodes to be taken into account when determining the short path.

The invention discloses a production method of an aluminum and copper composite metal band. In the method, the aluminum and copper composite metal band is manufactured by anaerobic continuous casting and rolling of semisolid aluminum or aluminum alloy and a solid copper band. In the production method of the invention, the anaerobic metallurgical combination of the solid copper band and molten aluminum is realized, the aluminum oxidization problem is solved, the combined strength is high, and the aluminum and copper bonding strength is more than or equal to 100MPa; the continuous casting and rolling of the copper band and the molten aluminum are adopted to produce the aluminum and copper composite metal band, so the production efficiency is greatly improved by scores of times and the product quality is stable; the produced aluminum and copper composite metal band retains the original surface quality of the copper band, has a uniformly-thick copper layer and can be deeply processed by cold rolling; and the copper band and the molten aluminum, which comprise different components, can be used, and products are diversified and widely applicable. The method has the advantages that: the production process of the copper and aluminum composite band is advanced and comprises a few working procedures; and the energy-saving, material-saving and economic effects are obvious.

A client apparatus receives a message including a random number from a server apparatus during the handshake of agreement process, creates a biometric negotiation message including the biometric authentication method information and sends the biometric negotiation message to the server apparatus. Then, the client apparatus executes a biometric authentication based on biometric authentication method information notified from the server apparatus and encrypts the random number based on the private key. In addition, the client apparatus generates an authenticator from a result of the biometric authentication, the biometric authentication method information, the encrypted random number, and the client certificate, and sends to the server apparatus an authentication context including these. The server apparatus verifies the authentication context and establishes a secure session in one handshake.

An image processing device includes: a high resolution template frame buffer; a high resolution reference frame buffer; a low resolution template frame buffer; a low resolution reference frame buffer; a low resolution motion vector calculation section; a high resolution motion vector calculation section; and a high resolution layer calculation determination section.

Disclosed are an inexpensive all-solid-state lithium battery and a group of batteries having a small internal resistance. The electrode active material of the battery is formed on the surface of a solid electrolyte (it may be a crystal or a glass material) containing lithium ion such as Li_3.4V_0.6Si_0.4O₄ and a Li—Ti—Al—P—O based glass material by exerting ion impact, high voltage application (e.g., about 400 V) and the like on the surface to react it. The resultant battery comprises the solid electrolyte and an electrode active material composed of a decomposition product of the solid electrolyte and provided on at least one side of the solid electrolyte. One obtainable by accumulating a plurality of the batteries serves as a group of batteries.

In order to perform cache processing for the received packets, a network apparatus is provided with a network-processor accelerator for caching the process result of a network processor. Accordingly, the network apparatus of the present invention ensuring higher packet-processing throughput can be realized by improving the packet-processing throughput without increase in the chip area, increase in the power consumption, and shortage in an external connected memory bandwidth.

Disclosed are a thin film transistor substrate and a method of fabricating the same in which the number of processes is reduced. The method includes forming a first conductive pattern including gate electrodes and gate lines on a substrate through a first mask process, depositing a gate insulating film and forming a second conductive pattern including a semiconductor pattern, source and drain electrodes and data lines through a second mask process, depositing first and second passivation films and forming pixel contact holes passing through the first and second passivation films and exposing the drain electrodes through a third mask process, and forming a third conductive pattern including a common electrode and a common line and forming a third passivation film formed in an undercut structure with the common electrode through a fourth mask process, simultaneously, and forming a fourth conductive pattern including pixel electrodes through a lift-off process.

The present invention provides a method of manufacturing a thin film magnetic head, capable of forming a magnetic pole layer as easily as possible. By etching a lower insulating layer and the upper insulating layer by RIE using a fluorine-based gas (CF₄ or CHF₃) or chlorine-based gas (Cl₂ or BCl₃), a magnetic pole formation space R1 is formed so as to have a uniform width in an upper insulating layer by and a magnetic pole formation space R2 is formed in the lower insulating layer so as to have a width gradually narrowed from width W1 to width W4 with distance from the magnetic pole formation space R1. After that, a plating film is grown in the magnetic pole formation spaces R1 and R2, thereby forming a main magnetic pole layer. Since the main magnetic pole layer is formed in one process by using the structural characteristics of the magnetic pole formation spaces R1 and R2, the process of forming the main magnetic pole layer is simplified and the number of processes required to form the main magnetic pole layer is reduced.