P -type delafossite base oxide ozone gas sensory semiconductor material and method for making same

An iron ore-based, oxide-based technology, applied in semiconductor/solid-state device manufacturing, material resistance, electrical components, etc., can solve the problems of inconvenient use and outdoor carrying measurement, short life, high power consumption, etc., and achieve good sensitivity, Good selectivity, low cost effect

Inactive Publication Date: 2008-11-19
ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Previous semiconductor ozone sensors were generally based on SnO 2 , ZnO, WO 3 and In 2 o 3 Such as oxide semiconductor materials, but such materials must be able to respond at high temperatures above 200 ° C, so a heater is required, with high power consumption and short life, which is inconvenient for use in home appliances and biomedical fields and for outdoor measurement
In 2002, the ZnO film provided by Thin Solid Films, volume 418, pages 45-50, can realize room temperature ozone sensing, but it must be activated by ultraviolet light when used, so its use is limited
This literature only studies CuAlO 2 The gas-sensing performance of the material at 1000ppm ozone concentration does not explain the selectivity of the gas-sensing material to other interfering gases, does not study the influence of doping on the ozone gas-sensing performance of the material, and does not explain the range of detection concentration, and these indicators are for gas The application of sensitive components is very important

Method used

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  • P -type delafossite base oxide ozone gas sensory semiconductor material and method for making same
  • P -type delafossite base oxide ozone gas sensory semiconductor material and method for making same
  • P -type delafossite base oxide ozone gas sensory semiconductor material and method for making same

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Embodiment 1

[0019] The oxides of Cu and Al are mixed according to the molar ratio of Cu:Al=1:1, and ground evenly, and the mixture is calcined at 1100°C-1200°C for 20 hours or more to form a gas-sensitive material. Add the gas-sensitive material to the binder and grind it fully to make a slurry coated on Al with gold electrodes and rhodium-platinum leads 2 o 3 on a ceramic substrate. Insulate at an appropriate temperature (at 300°C to 600°C for 2 hours or more) and fire to form a thick-film ozone sensor. The element is very sensitive to ozone at room temperature while exhibiting good selectivity and stability.

Embodiment 2

[0021] The oxides of Cu and Cr are mixed according to the molar ratio of Cu:Cr=1:1, and the ozone gas sensor is made according to the operation procedure of Example 1. The room temperature conductivity of the element is obviously lower than that of the element in Example 1, but the room temperature ozone sensitivity is obviously improved.

Embodiment 3

[0023] The oxides of Cu, Cr and Mg are mixed according to the molar ratio of Cu: Cr=1:0.97:0.03, and the ozone gas sensor is made according to the operation procedure of Example 1. The room temperature ozone sensitivity of the element is equivalent to that of the element in Example 2, but the room temperature conductivity is significantly improved.

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Abstract

The invention discloses a p-type delafossite base oxide ozone gas sensing semiconductor material and a method for the production thereof, the ozone gas sensing semiconductor material is a mixture of p-type delafossite base oxide CuM(1-x)AxO2, 0<=x<=0. 30, or the oxide and other materials by arbitrary proportion, and M is a trivalent metal ion of B, Al, Ga, In, Fe, Cr, Sc, Y or La; and A is bivalent metal ions of Mg, Ca, Ni, Sr and Zn. The gas sensing material of the invention has advantages of good selectivity, reversibility and stability to the response of ozone at the room temperature, a gas-sensitive element made by the gas sensing material of the invention need not carry a heater, and the ozone gas has good sensitivity characteristics in the concentration range of 1ppm to 1000ppm at the room temperature. The semiconductor material and the method can provide the room temperature ozone gas-sensitive element with low power consumption, long service life and low cost of manufacture.

Description

technical field [0001] The invention relates to an ozone gas-sensitive semiconductor material and a preparation method thereof. Background technique [0002] Previous semiconductor ozone sensors were generally based on SnO 2 , ZnO, WO 3 and In 2 o 3 Such as oxide semiconductor materials, but such materials must be able to respond at high temperatures above 200°C, so they need to carry a heater, consume a lot of power, and have a short lifespan. In 2002, the ZnO thin film provided on page 45-50 of volume 418 of Thin Solid Films can realize ozone sensing at room temperature, but it must be activated by ultraviolet light when used, so its use is limited. In addition, some SmFeO 3 , CuPc and other p-type materials, Zn 2 In 2 o 5 -MgIn 2 o 4 Multi-component thin film materials also have the above-mentioned disadvantages. In order to solve these problems, a lot of research work has been carried out, such as doping other additives or catalysts, using gas-permeable membra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12H01L21/00
Inventor 邓赞红方晓东陶汝华董伟伟
Owner ANHUI INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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