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A planar structure perovskite solar cell based on p-type delafossite semiconductor material and its preparation

A solar cell and planar structure technology, applied in the field of solar cells, can solve problems such as efficiency record growth

Active Publication Date: 2018-02-16
HANGZHOU ZHONGNENG PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Perovskite solar cell technology emerges, albeit short in development, with an explosion in efficiency records

Method used

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  • A planar structure perovskite solar cell based on p-type delafossite semiconductor material and its preparation
  • A planar structure perovskite solar cell based on p-type delafossite semiconductor material and its preparation
  • A planar structure perovskite solar cell based on p-type delafossite semiconductor material and its preparation

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preparation example Construction

[0051] In one embodiment of the present invention, a kind of preparation method of planar structure perovskite solar cell is provided, such as figure 1 As shown in (a), the solar cell includes a transparent conductive glass substrate or a flexible transparent conductive film substrate, the above-mentioned hole transport layer, the above-mentioned light harvesting layer, an organic electron transport layer, and an interface modification layer from bottom to top And metal electrode, its specific steps are as follows:

[0052] 1) Ultrasonic cleaning of FTO transparent conductive glass or ITO transparent conductive glass or PET flexible transparent conductive film or PI flexible transparent conductive film with deionized water, ethanol and acetone in sequence, and then treated with ultraviolet ozone to obtain a clean substrate;

[0053] 2) in step 1) spin coating or spraying or scraping described ADO on the clean substrate surface 2 The precursor solution of type semiconductor ma...

Embodiment 1a

[0077] Such as figure 1 Shown in (a), the first kind of planar structure perovskite solar cell involved in the present invention consists of substrate (FTO conductive glass or ITO conductive glass or PET flexible transparent conductive film or PI flexible transparent conductive film), CuGaO 2 It is composed of a hole transport layer, a light harvesting layer, an organic electron transport layer, an interface modification layer and a metal electrode. The specific preparation steps are as follows:

[0078] Step 1) Substrate preparation: ultrasonically clean FTO conductive glass or ITO conductive glass or PET flexible transparent conductive film or PI flexible transparent conductive film with deionized water, ethanol and acetone in sequence, and then treat with ultraviolet and ozone for 15 to 30 minutes to obtain Substrate, spare.

[0079] Step 2) CuGaO 2 Hole-transporting thin films (i.e. CuGaO 2 Hole transport layer) preparation: with CuGaO 2 Nanosheets and ethanol or glyco...

Embodiment 1b

[0085] Such as figure 1 Shown in (b), the second planar structure perovskite solar cell involved in the present invention consists of substrate (FTO conductive glass or ITO conductive glass or PET flexible transparent conductive film or PI flexible transparent conductive film), CuGaO 2 It consists of a hole transport layer, a light harvesting layer, an inorganic electron transport layer and a metal electrode, and the specific preparation steps are as follows:

[0086] Step 1) Substrate preparation: ultrasonically clean FTO conductive glass or ITO conductive glass or PET flexible transparent conductive film or PI flexible transparent conductive film with deionized water, ethanol and acetone in sequence, and then treat with ultraviolet and ozone for 15 to 30 minutes to obtain Substrate, spare.

[0087] Step 2) CuGaO 2 Hole-transporting thin films (i.e. CuGaO 2 Hole transport layer) preparation: with CuGaO 2 Nanosheets and ethanol or glycol ether are used as sources, and the ...

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Abstract

The invention relates to a planar structure perovskite solar cell and a preparation method thereof. The cell includes a hole transport layer and a light-harvesting layer; the light-harvesting layer is formed of an MXZ3 type perovskite material, wherein M is selected from Cs+, CH3NH3+, CH3CH2NH3+, CH(NH2)2+ or a mixture thereof, X is selected from Pb2+, Sn2+, Ge2+ or a mixture thereof, Z is selected from Cl-, Br-, I- or a mixture thereof; the hole transport layer is composed of p-type Doped or undoped ADO2 type semiconductor material of delafossite structure, wherein, A is selected from Cu or Ag, D is selected from one or more of Cr, Ga, Sc, In, Y or Fe, doped The heteroelement is selected from one or two of Mg, Ca, Sr or Ga. The thin film of the hole transport layer of the present invention has good electrical conductivity, suitable energy level position, high light transmittance and low cost, can obtain solar cell devices with excellent performance and stability, and is beneficial to the advancement of the industrialization of perovskite solar cells.

Description

technical field [0001] The invention belongs to the technical field of solar cells, relates to a solar cell structure and a preparation method thereof, in particular to ADO with a p-type delafossite structure 2 A planar structure perovskite solar cell with a type semiconductor material as a hole transport layer and a preparation method thereof. Background technique [0002] Solar energy is an inexhaustible renewable clean energy with unique advantages and huge development potential. The large-scale development and utilization of solar energy is of great significance for establishing a reasonable green energy structure and achieving the goal of maximum energy conservation and emission reduction. Currently, the relatively mature photovoltaic technologies in the market include the first-generation silicon-based semiconductor solar cells and the second-generation CIGS, CdTe and other multi-component thin-film solar cells. Although the annual growth rate is 30%, the total instal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/141H10K30/10Y02E10/549Y02P70/50H10K85/50H10K30/86
Inventor 石磊徐志立
Owner HANGZHOU ZHONGNENG PHOTOELECTRIC TECH CO LTD
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