P-type oxide semiconductor thin-film transistor and preparing method thereof

A technology for oxide semiconductors and thin film transistors, applied in the fields of semiconductor/solid-state device manufacturing, transistors, semiconductor devices, etc., can solve the problems of less reports of P-type oxide thin film transistors, and achieve suitable for large-scale industrial production, good electrical properties, Easy-to-use effects

Inactive Publication Date: 2016-04-13
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, most oxide semiconductors have intrinsic N-type conductivity, so the oxide thin film transistors cur

Method used

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  • P-type oxide semiconductor thin-film transistor and preparing method thereof
  • P-type oxide semiconductor thin-film transistor and preparing method thereof
  • P-type oxide semiconductor thin-film transistor and preparing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] The P-type oxide semiconductor thin film transistor of this embodiment, such as figure 1 shown, including:

[0034] A substrate 1, the substrate 1 is a heavily doped silicon substrate (heavily doped N-type silicon wafer), and the heavily doped silicon substrate is used as a gate electrode at the same time;

[0035] an insulating layer 2, which is a silicon dioxide film, located on the gate electrode;

[0036] The active layer 3 is a P-type delafossite structure oxide film, located on the insulating layer 2;

[0037] The source electrode 4 and the drain electrode 5 are all Cu films, respectively located on the active layer 3;

[0038] Wherein, the material of the P-type delafossite structure oxide film is CuAlO 2 .

[0039] The thickness of the insulating layer is 300nm, the thickness of the active layer is 80nm, and the thickness of the source electrode and the drain electrode is 200nm.

[0040] The preparation method of the P-type oxide semiconductor thin film tra...

Embodiment 2

[0048] The structure diagram of the P-type oxide semiconductor thin film transistor of this embodiment is the same as that of Embodiment 1, specifically including:

[0049] A substrate, the substrate is a heavily doped silicon substrate (heavily doped N-type silicon wafer), and the heavily doped silicon substrate is used as a gate electrode at the same time;

[0050] an insulating layer, which is a transparent zirconium dioxide film, located on the gate electrode;

[0051] The active layer is a P-type delafossite structure oxide film and is located on the insulating layer;

[0052] The source electrode and the drain electrode are all Cu films, respectively located on the active layer;

[0053] Wherein, the material of the P-type delafossite structure oxide film is CuInO 2 .

[0054] The thickness of the insulating layer is 300nm, the thickness of the active layer is 120nm, and the thickness of the source electrode and the drain electrode is 200nm.

[0055] The preparation ...

Embodiment 3

[0062] The structure diagram of the P-type oxide semiconductor thin film transistor of this embodiment is the same as that of Embodiment 1, specifically including:

[0063] A substrate, the substrate is a heavily doped silicon substrate (heavily doped N-type silicon wafer), and the heavily doped silicon substrate is used as a gate electrode at the same time;

[0064] an insulating layer, which is a transparent aluminum oxide film, located on the gate electrode;

[0065] The active layer is a P-type delafossite structure oxide film and is located on the insulating layer;

[0066] The source electrode and the drain electrode are all Cu films, respectively located on the active layer;

[0067] Wherein, the material of the P-type delafossite structure oxide film is CuGaO 2 .

[0068] Wherein, the thickness of the insulating layer is 300nm, the thickness of the active layer is 120nm, and the thickness of the source electrode and the drain electrode is 200nm.

[0069] The prepar...

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Abstract

The invention discloses a P-type oxide semiconductor thin-film transistor and a preparing method thereof. The thin-film transistor comprises the components of a heavily doped silicon substrate which is used as a gate electrode; an insulating layer which is an insulating oxide film and is arranged on the gate electrode; an active layer which is a P-type delafossite-structured oxide film and is arranged on the insulating layer; a source electrode and a drain electrode which are Cu films and are arranged on the active layer. The P-type delafossite-structured oxide film is made of CuAlO2, CuInO2 or CuGaO2. The P-type delafossite-structured oxide film which is used as the active layer represents a stable P-type semiconductor characteristic, thereby realizing large valence band maximum frequency bandwidth and high hole mobility. The p-type oxide semiconductor thin-film transistor has a simple structure and furthermore the preparing process of the p-type oxide semiconductor thin-film transistor is compatible with microelectronic technology. Furthermore the p-type oxide semiconductor thin-film transistor has advantages of high chemical stability and excellent electrical property. The p-type oxide semiconductor thin-film transistor has a wide application prospect in organic light-emitting diode displaying, complementary oxide semiconductor electronic circuits and transparent electronic circuits.

Description

technical field [0001] The invention belongs to the technical field of thin film transistors, and in particular relates to a P-type oxide semiconductor thin film transistor, and also relates to a preparation method of the P-type oxide semiconductor thin film transistor. Background technique [0002] Thin film transistor is a unipolar semiconductor device that transmits current by majority carriers, and the semiconductor active layer has a crucial impact on device performance and manufacturing cost. With the continuous emergence of new processes, new materials, and new structures, new thin-film transistors are not only used in active matrix display devices, but also in fields such as thin-film integrated circuits, photoelectric image sensors, thin-film memories, and gas sensors. In recent years, thin-film transistors with oxide semiconductors as the active layer have attracted widespread attention. This type of device has the advantages of high mobility, low preparation tempe...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/24H01L21/34
CPCH01L29/7869H01L29/24H01L29/66969
Inventor 张新安赵俊威李爽张伟风
Owner HENAN UNIVERSITY
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