31results about How to "Raise the superconducting transition temperature" patented technology

High-temperature superconductivity confined to nanometer-scale interfaces has been a long standing goal because of potential applications in electronic devices. The spontaneous formation of a superconducting interface in bilayers consisting of an insulator (La₂CuO₄) and a metal (La_1−xSr_xCuO₄), neither of which is superconducting per se, is described. Depending upon the layering sequence of the bilayers, T_c may be either ˜15 K or ˜30 K. This highly robust phenomenon is confined to within 2-3 nm around the interface. After exposing the bilayer to ozone, T_c exceeds 50 K and this enhanced superconductivity is also shown to originate from a 1 to 2 unit cell thick interfacial layer. The results demonstrate that engineering artificial heterostructures provides a novel, unconventional way to fabricate stable, quasi two-dimensional high T_c phases and to significantly enhance superconducting properties in other superconductors. The superconducting interface may be implemented, for example, in SIS tunnel junctions or a SuFET.

The invention provides a preparation method of an epitaxial iron-based superconducting thin film, comprising the following steps: a) preparing a target material needed by the epitaxial iron-based superconducting thin film, placing the target material into a vacuum cavity of a pulse laser deposition system, wherein the target material is FeSex or FeSe(1-y)Tey target material, x is more than or equal to 0.80 and is less than or equal to 1.0, y is more than 0 and is less than or equal to 1.0; b) preparing a substrate, fixing the substrate on a substrate platform, and placing the substrate platform into the vacuum cavity of the pulse laser deposition system; c) heating the substrate platform and further heating the substrate; and d) utilizing a pulse laser deposition method to grow the thin film on the substrate. The invention also provides a single-alpha-phase and c-oriented epitaxial iron-based superconducting thin film prepared according to the method.

The invention relates to a process for preparing MgB2 superconducting material which comprises the steps of, grinding B2O3 and Mg powder under the protection of oinert gas, loading the grinded raw material into ceramic crucible, sintering the crucible in vacuum pit furnace, naturally cooling down to room temperature in vacuum or under the inert gas protection status.

The invention relates to a novel method for increasing superconducting transition temperature Tc, in particular to a method for increasing the superconducting transition temperature Tc by using vertex angel oxygen in sequence. In the invention, a precursor method and a high temperature and high pressure method are used for synthesizing a high temperature superconductor of Sr2CuO3+Delta (Delta is more than zero and less than 1) with a single phase; the material refers to a p-typed high temperature superconductor with a single layer of CuO2 plane and a simple structure and the vertex angle oxygen partly occupied; the high temperature superconductor after synthesized under high temperature is treated thermally with the temperature of the thermal treatment of 50 DEG C to 500 DEG C and the time of the thermal treatment is 0.5 hour to 30 hours. The vertex angle is ordered, the Tc of Sr2CuO3+Delta after synthesized under high pressure increases from 30 to 75 K to 90 to 100 K after thermal treatment in low temperature. The method can be applicable to other systems and can be taken as a new path for developing a higher Tc superconducting material.

The invention relates to a MgB2-based superconductor doped with heterogeneous phases of topological illuminants and a preparation method of the superconductor. The topological illuminants are used fordoping to change the superconducting transition temperature of the MgB2-based superconductor. A hydrothermal method is adopted for preparing the three topological illuminants including the micrometersheet m-Y2O3:Eu3+/Ag, the nanosheet n-Y2O3:Eu3+/Ag and the nanosheet n-Y2O3:Eu3+/AgCl. A heterotopic doping method is used for preparing the MgB2-based superconductor doped with the heterogeneous phases of the topological illuminants. The change of the superconducting transition temperature of a doped sample is studied by changing the size of dopants, the content of Ag, the mass fraction of the dopants and the like. It is found in experiments that when n-Y2O3:Eu3+/AgCl is used as the dopant and the doping concentration is 1%, the transition temperature of the doped MgB2-based superconductor is higher than that of a corresponding pure MgB2 sample.

The invention relates to a Fe (Se, Te) superconducting thick film and a preparation method and application thereof, and the preparation method of the Fe (Se, Te) superconducting thick film comprises the following steps: depositing a Fe (Se, Te) seed layer on a metal base band plated with a buffer layer by adopting a multi-channel pulse laser deposition method, and then depositing a plurality of Fe (Se, Te) superconducting layers on the Fe (Se, Te) seed layer. Compared with the prior art, the Fe (Se, Te) superconducting thick film prepared by the method has pure C-axis orientation, high superconducting transition temperature, high critical current and high critical current density, and under 4.2 K and self field, the critical current is greater than 300A, and the critical current density is as high as 2.3 MA/cm < 2 >; the Fe (Se, Te) superconducting thick film provided by the invention has high critical current and critical current density in a self field and a magnetic field, can meet high-intensity magnetic field application, and is suitable for industrial production.

The invention relates to a novel quasi-two-dimensional selenium-doped tellurium-containing superconducting material and a preparation method thereof, and belongs to the technical field of functional material manufacturing, wherein the chemical general formula of the novel quasi-two-dimensional selenium doped tellurium-containing superconducting material is CuIr2Te4-xSex (x is greater than or equal to 0.0 and less than or equal to 0.5). According to the invention, a traditional high-temperature solid phase method is used, high-purity Cu, Ir, Te and Se powder (the purity is larger than or equal to 99.9%) with corresponding stoichiometric ratios are fully ground and then placed in a quartz tube, then vacuumizing and sealing are conducted, the sealed quartz tube containing raw materials is placed in a furnace, sintering is conducted for 120 h at a temperature of 850 DEG C to obtain CuIr2Te4-xSex (x is larger than or equal to 0.0 and smaller than or equal to 0.5) polycrystalline powder, the polycrystalline powder is tabletted after complete grinding, a flaky sample is placed into a vacuum sealed quartz tube, and sintering is performed at 850 DEG C for 240 hours to obtain a flaky CuIr2Te4-xSex (x is greater than or equal to 0.0 and less than or equal to 0.5) sample; and a comprehensive physical performance test system (PPMS) is used, and low-temperature performance of physical properties such as conductivity, magnetic property, specific heat capacity and the like of a sample is measured to finally determine that the target product has superconductivity.

The invention relates to a topological illuminator heterogeneous phase doped Bi(Pb)-Sr-Ca-Cu-O intelligent metasuperconductor and a preparation method thereof. The superconducting transition temperature of a Bi(Pb)-Sr-Ca-Cu-O superconductor is improved by utilizing topological illuminator doping. A Y2O3:Eu<3+>/Ag topological illuminator having 1 percent by mass of Ag is prepared by adopting a hydrothermal method, and the topological illuminator heterogeneous phase doped Bi(Pb)-Sr-Ca-Cu-O superconductor is prepared by adopting a solid-phase sintering method. Under the effect of an external electric field, the superconducting transition temperature of a Y2O3:Eu<3+>/Ag topological illuminator heterogeneous phase is excited to perform electroluminescence, and the superconducting transition temperature of a Bi(Pb)-Sr-Ca-Cu-O superconductor is influenced through electroluminescence. Changes of the superconducting transition temperature of a doped sample is studied by changing the mass percentage of a doping agent. Experiments discover that the superconducting transition temperature of a doped sample is higher than that of a pure sample.

The invention relates to a novel indium-containing transition metal telluride superconducting material and a preparation method thereof, and belongs to the technical field of quantum function material manufacturing. The preparation method is a traditional high-temperature solid-phase method and comprises the following steps: fully grinding Cu, Ir, In and Te according to corresponding stoichiometric ratios, vacuumizing, sealing in a quartz tube, putting the sealed quartz tube filled with raw materials into a furnace, and sintering at 800 DEG C for 120 hours to obtain CuIr2-xInxTe4 (x is greater than or equal to 0 and less than or equal to 0.1) polycrystalline powder. According to the invention, the physical properties of the material are tested through a comprehensive physical property test system (PPMS), and the superconducting physical properties of a target material are deeply investigated by measuring the physical properties such as conductivity, magnetic properties, upper and lower critical magnetic fields and the like of the material; the novel quasi-two-dimensional indium-doped transition metal tellurium compound superconducting material is reported for the first time; and by synthesizing the compound superconducting material, a new member is added for the family of transition metal sulfide superconducting materials, and people are helped to understand the physical properties of high-temperature copper-based or iron-based superconducting.

The invention discloses a novel iron-based superconducting material and a preparation method thereof, and belongs to the field of iron-based superconducting materials. The preparation method comprisesthe following steps: preparing FeSe powder from iron powder and selenium powder, putting the FeSe powder, cesium chloride and a sodium citrate solution into a container, then, adding 4-tert-butyl pyridine into a container, fully mixing all the components, sealing, performing ultrasonic treatment, pouring the mixed reaction solution into a reaction kettle, sealing, putting the obtained product into a drying oven, heating, cooling the product to room temperature, grinding the product to obtain Cs0.77Na0.23(C9H13N)0.18Fe2Se2 powder, then putting the powder into the drying oven, performing annealing treatment, and taking out the powder to obtain the Cs0.77Na0.23(C9H13N)0.18 Fe2Se2 iron-based superconducting new material. The iron-based superconducting new material has a relatively high superconducting transition temperature.

The invention discloses a polystyrene colloidal sphere and niobium film composite heterogeneous structure superconducting material, which comprises a substrate, a niobium film and a polystyrene colloidal hexagonal array film, wherein the niobium film is located on the substrate, and the polystyrene colloidal hexagonal array film coats the niobium film; the polystyrene colloidal hexagonal array film comprises multiple polystyrene colloidal microspheres; and single layers of the polystyrene colloidal microspheres are tightly arranged to form the hexagonal array. The invention also discloses a method of preparing the superconducting material. The polystyrene colloidal microspheres and the niobium superconducting film material are constructed into a heterogeneous structure nanostructure material; through changing the contact area between the colloidal spheres and the niobium substrate, the critical temperature for superconducting transition is regulated, the superconducting transition temperature Tc<onset> for the niobium film is thus improved; and the material preparation process is simple, needed devices are few, the superconducting material preparation cost is greatly reduced, and popularization and application are facilitated.

The invention relates to the technical field of material synthesis, in particular to a preparation method of a titanium oxide superconducting thin film. The method comprises the steps that S1, a polycrystalline target material of titanium oxide is prepared through a solid phase method; S2, a substrate of the titanium oxide superconducting thin film to be produced is prepared; and S3, the target material in the step S1 is subjected to ablation through a pulse laser deposition system, the target material obtained after ablation extends on the substrate in the step S2, and the titanium oxide superconducting thin film is prepared. According to the method, the titanium oxide superconducting thin film material can be prepared without controlling oxygen partial pressure in the growth process, the growth process of the titanium oxide superconducting thin film material is simplified, and the superconducting transition temperature is increased.