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Method of preparing electron type high-temperature superconductor lanthanum cerium cuprum oxygen film

An electronic and superconductor technology, applied in the usage of superconductor elements, the manufacture/processing of superconductor devices, and the manufacture of cables/conductors, etc., can solve the problems of expensive equipment, slow film deposition rate, etc. low cost effect

Inactive Publication Date: 2010-05-19
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the existence of equipment in molecular beam epitaxy (MBE) method is very expensive, and the defect that film deposition rate is slow, and existing pulsed laser deposition (PLD) method exists and needs to adopt BaTiO 3 buffer layer, thus requiring an additional target material, and is also a disadvantageous defect for the direct integration of LCCO layers and other materials to form heterostructures; thereby providing a method that does not require BaTiO 3 buffer layer to prepare La 2-x Ce x CuO 4 thin film method

Method used

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  • Method of preparing electron type high-temperature superconductor lanthanum cerium cuprum oxygen film
  • Method of preparing electron type high-temperature superconductor lanthanum cerium cuprum oxygen film
  • Method of preparing electron type high-temperature superconductor lanthanum cerium cuprum oxygen film

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Embodiment 1

[0039] Concrete preparation steps are as follows:

[0040] 1. According to La 2-x Ce x CuO 4 , where the doping ratio of x=0.11 is adopted, the LCCO ceramic target is made by the solid-state reaction method, and installed on the target base of the reaction chamber;

[0041] In this example, the specific steps for preparing LCCO ceramic targets by solid-state reaction method are as follows:

[0042] a. Ingredients: Calculate the chemical ratio of the target according to x=0.10, weigh a certain amount of high-purity (>99.9%) La2O3, CeO2 and CuO powders, fill them in an agate mortar and grind them evenly;

[0043] b. Pre-calcination: first pre-calcine the mixture at 800-900°C for 12-24 hours, so that various raw materials can undergo preliminary synthesis reactions. Then cool down and take out to grind evenly. Sinter the pre-fired powder at a high temperature of 950°C for more than 48 hours to make it undergo a sufficient chemical phase formation reaction. This is accompani...

Embodiment 2

[0057] In this embodiment, the substrate is MgO; the target material is under-doped, and its ratio is x=0.08; the growth temperature is 600°C, and the pressure ratio of the mixed gas in the reaction chamber is oxygen:argon=1 / 4, The pressure in the reaction chamber is 40Pa, the sputtering current during growth is 300mA, the sputtering time is 30, the annealing temperature is 500°C, and the annealing time is 60 minutes. Other steps and parameters are the same as in Example 1. The LCCO thin film sample prepared in this example has The superconducting transition temperature is 5.0K, and the surface morphology of the sample is as follows figure 2 As shown, it can be seen from the figure that the surface of the LCCO film grown by the method of the present invention is very smooth, and the average surface roughness is about 2 nanometers.

Embodiment 3

[0059] In this embodiment, the substrate is selected from LaAlO 3 , the target material is over-doped, the proportion is x=0.16, the growth temperature is 800°C, the pressure ratio of the mixed gas in the reaction chamber is oxygen:argon=1 / 4, the reaction chamber pressure is 50Pa, the growth The sputtering current is 300mA, the sputtering time is 80 minutes, the annealing temperature is 650°C, and the annealing time is 40 minutes. Other steps and parameters are the same as in Example 1. The superconducting transition temperature of the LCCO film sample prepared in this example is 12.0K

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Abstract

The invention provides a method for preparing an electron-doped high-temperature superconductor La2-xCexCuO4 film. Direct current magnetron sputtering equipment is used, and the invention comprises the following steps: firstly, according to La2-xCexCuO4 and the compounding ratio that 0.08 is less than or equal to x and x is less than or equal to 0.16, a solid phase reaction method is adopted to prepare a La2-xCexCuO4 ceramic target, and then the ceramic target is arranged on the target seat of a reaction chamber; secondly, substrate choice: SrTiO3, MgO or LaAlO3 is chosen, washed to be clean and then put on a heating stage in the reaction chamber, and the reaction chamber is closed; thirdly, the reaction chamber is vacuumized till the vacuum of a back side is superior to 2.0*10<-4>Pa; fourthly, the substrate is heated to 600-800 DEG C; fifthly, a reacting gas is charged in the reaction chamber; sixthly, the surface of the La2-xCexCuO4 ceramic target is pre-sputtered; seventhly, the heating stage is moved to the target position, and the La2-xCexCuO4 film begins to be prepared on the substrate; eighthly, after the reaction is ended, the reacting gas is stopped to be charged, the vacuum is pumped till the vacuum degree is superior to 2*10<-4> Pa, then the temperature of the substrate with La2-xCexCuO4 film prepared is dropped to the annealing temperature, and the annealing is performed; ninthly, the substrate with La2-xCexCuO4 film prepared is naturally cooled to the room temperature.

Description

technical field [0001] The invention relates to a method for preparing an electronic high-temperature superconductor thin film, in particular to an electronic high-temperature superconductor lanthanum cerium copper oxide La 2-x Ce x CuO 4 (hereinafter referred to as LCCO) film preparation method. Background technique [0002] In recent years, people have gradually realized that electronic superconductors play an important role in exploring the superconducting mechanism of cuprate superconductors, and recently it has become a research hotspot in the world. Electronic superconductor materials have a relatively simple structure, with only a single-layer or infinite-layer repeating structure. The copper-oxygen surface has four-corner symmetry and is very flat. Different levels of doping can be easily performed by controlling the cation composition. At the same time, the critical magnetic field of electronic superconductors is much lower than that of hole-type superconductors....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B12/06H01B13/00H01L39/24C23C14/35C23C14/08H10N60/01
CPCY02E40/642Y02E40/60
Inventor 赵柏儒赵力金魁吴昊袁洁许波
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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