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Method for preparing electronic high temperature superconductor lanthanum-cerium-copper oxide films

A superconductor and electronic technology, applied in the manufacture/processing of superconductor devices, ion implantation plating, coating, etc., can solve the problems of slow film deposition rate and expensive equipment, achieve a large practical range and value, and grow at a low temperature , the effect of expanding the scope of application

Inactive Publication Date: 2010-03-10
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the existence of equipment in molecular beam epitaxy (MBE) method is very expensive, and the defect that film deposition rate is slow, and pulsed laser deposition (PLD) method exists and needs to adopt BaTiO 3 buffer layer, thus requiring an additional target material, and is also a disadvantageous defect for the direct integration of LCCO layers and other materials to form heterostructures; thereby providing a method that does not require BaTiO 3 Buffer layer to prepare the method of LCCO thin film

Method used

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  • Method for preparing electronic high temperature superconductor lanthanum-cerium-copper oxide films
  • Method for preparing electronic high temperature superconductor lanthanum-cerium-copper oxide films
  • Method for preparing electronic high temperature superconductor lanthanum-cerium-copper oxide films

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Experimental program
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Embodiment 1

[0038] The specific preparation steps of this embodiment are as follows:

[0039] 1. According to La 2-x Ce x CuO 4 Proportional weighing, wherein x=0.10, the LCCO ceramic target is made by the solid phase reaction method, and installed on the target base of the reaction chamber; this embodiment adopts the solid phase reaction method

[0040] The specific steps of preparing LCCO ceramic targets by traditional solid state reaction sintering method are as follows:

[0041] a. Ingredients: Calculate the chemical ratio of the target material according to x=0.10, weigh a certain amount of high-purity (>99.9%) La2O3, CeO2 and CuO powders, put them in an agate mortar and grind them evenly;

[0042] b. Pre-calcination: first pre-calcine the mixture at 800-900°C for 12-24 hours, so that various raw materials can undergo preliminary synthesis reactions. Then cool down and take out to grind evenly. Sinter the pre-fired powder at a high temperature of 950°C for more than 48 hours to ...

Embodiment 2

[0055] In this embodiment, the substrate is selected from MgO, and over-doped La 2-x Ce x CuO 4 The target, where x=0.08, the growth temperature is 675°C, the gas in the reaction chamber is oxygen, the pressure in the reaction chamber is 10Pa, the distance between the target and the base is adjusted to 3cm, the laser pulse frequency is 3Hz during growth, the pulse energy is 180mJ, and the deposition time is 10 minutes, the annealing temperature is 450° C. and the annealing time is 10 minutes. Other steps and parameters are the same as in Example 1. The superconducting transition temperature of the LCCO film sample prepared in this example is 5.0K.

Embodiment 3

[0057] In this embodiment, the substrate is selected from LaAlO 3 , and select overdoped La 2-x Ce x CuO 4 The target, where x=0.11, the growth temperature is 720°C, the gas in the reaction chamber is oxygen, the pressure in the reaction chamber is 20Pa, the distance between the target and the base is adjusted to 4cm, the laser pulse frequency is 4Hz during growth, the pulse energy is 220mJ, and the deposition time is 15 Minutes, the annealing temperature is 550 ℃ of annealing time 15 minutes, other steps and parameters are identical with embodiment 1, measure the resistance-temperature curve of the LCCO thin film sample that present embodiment prepares, as image 3 As shown, the initial superconducting transition temperature of the sample is 28K, when the temperature drops to the zero resistance transition temperature T C0 At 26K, it is completely superconducting.

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Abstract

The present invention provides a method of preparing electron type high-temperature superconductor LCCO film, using pulse laser sedimentary equipment. The present invention comprises the following steps that: firstly, according to the ratio of La2-xCexCuO4, wherein, x is more than or equal to 0.08, and less than or equal to 0.16, a LCCO ceramic target material is prepared by adopting the solid state reaction method and arranged on a target seat of a reaction chamber; secondly, a substrate is selected; SrTiO3, MgO or LaAlO3 is selected, cleaned and put onto a heating table inside the reaction chamber, and then the reaction chamber is closed; thirdly, the reaction chamber is vacuumized till the back bottom vacuum is superior to 2.0x10-4Pa; fourthly, the substrate is heated to 675-800 DEG C by a heater; fifthly, reaction gas is pumped into the reaction chamber; sixthly, the surface of the LCCO ceramic target material is cleaned; seventhly, the LCCO ceramic target material is heated to besublimated, and then a LCCO film is initially prepared on the substrate; eighthly, after reaction is over, the reaction gas is stopped from being pumped into the reaction chamber, and the reaction chamber is vacuumized till the vacuum is superior to 2x10-4Pa; then the substrate with the prepared LCCO film is cooled to be at annealing temperature for annealing; finally the substrate with the prepared LCCO film is naturally cooled to be at room temperature.

Description

technical field [0001] The invention relates to a method for preparing an electronic high-temperature superconductor thin film, in particular to an electronic high-temperature superconductor lanthanum cerium copper oxide La 2-x Ce x CuO 4 (hereinafter referred to as LCCO) film preparation method. Background technique [0002] In recent years, people have gradually realized that electronic superconductors play an important role in exploring the superconducting mechanism of cuprate superconductors, and recently it has become a research hotspot in the world. Electronic superconductor materials have a relatively simple structure, with only a single-layer or infinite-layer repeating structure. The copper-oxygen surface has four-corner symmetry and is very flat. Different levels of doping can be easily performed by controlling the cation composition. At the same time, the critical magnetic field of electronic superconductors is much lower than that of hole-type superconductors....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/54C23C14/08H01L39/24H10N60/01
Inventor 赵柏儒袁洁吴昊金魁赵力曹立新许波
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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