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Preparation method of epitaxial iron-based superconducting thin film and prepared epitaxial iron-based superconducting thin film

A technology of iron-based superconductivity and thin film, applied in the field of superconductivity, can solve the problem of insufficient physical properties

Active Publication Date: 2010-10-20
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Moreover, the current research on α-FeSe iron-based superconducting materials is mainly based on polycrystalline materials, and the research on its physical properties is not deep enough.

Method used

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  • Preparation method of epitaxial iron-based superconducting thin film and prepared epitaxial iron-based superconducting thin film
  • Preparation method of epitaxial iron-based superconducting thin film and prepared epitaxial iron-based superconducting thin film
  • Preparation method of epitaxial iron-based superconducting thin film and prepared epitaxial iron-based superconducting thin film

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Embodiment 1

[0038] 1) First prepare FeSe 0.88 For the target (polycrystalline), mix Fe and Se powders with a molar ratio of 1:0.88 evenly, and vacuum-pack it with a quartz tube after pressing, and sinter at 600°C for 24 hours; after cooling down, take out the sintered target and crush it. After pressing the tablet again, vacuum seal it with a quartz tube. After sintering again at 700°C for 24 hours, lower the temperature to 380°C and anneal for 24 hours; put the sintered target into the vacuum chamber of the pulsed laser deposition system.

[0039] 2) SrTiO with (001) orientation 3 The single crystal substrate is ultrasonically cleaned with acetone for 10 minutes, then ultrasonically cleaned with alcohol for 10 minutes, dried with compressed air, fixed on the substrate table, and then put the substrate table into the vacuum chamber, the target and the substrate The distance is controlled at about 4cm.

[0040] 3) The vacuum degree in the vacuum chamber is better than 3×10 -4 Under the ...

Embodiment 2

[0046] 1) First prepare FeSe 0.4 Te 0.6 For the polycrystalline target material, Fe, Se and Te powders with a molar ratio of 1:0.4:0.6 are mixed evenly, and after being pressed into tablets, they are vacuum-packed with a quartz tube and sintered at 600°C for 24 hours. The sintered target is crushed, pressed into pellets and vacuum-packed with a quartz tube. After re-sintering at 700°C for 24 hours, the temperature is lowered to 380°C for 24 hours for annealing. Put the sintered target into the vacuum cavity of the pulsed laser deposition system.

[0047] 2) (001) orientation SrTiO for substrate 3 The single crystal substrate is ultrasonically cleaned with acetone for 10 minutes, then ultrasonically cleaned with alcohol for 10 minutes, dried with compressed air, fixed on the substrate table, and then put the substrate table into the vacuum chamber, the target and the substrate The distance is controlled at about 4cm.

[0048] 3) The vacuum degree in the vacuum chamber is be...

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Abstract

The invention provides a preparation method of an epitaxial iron-based superconducting thin film, comprising the following steps: a) preparing a target material needed by the epitaxial iron-based superconducting thin film, placing the target material into a vacuum cavity of a pulse laser deposition system, wherein the target material is FeSex or FeSe(1-y)Tey target material, x is more than or equal to 0.80 and is less than or equal to 1.0, y is more than 0 and is less than or equal to 1.0; b) preparing a substrate, fixing the substrate on a substrate platform, and placing the substrate platform into the vacuum cavity of the pulse laser deposition system; c) heating the substrate platform and further heating the substrate; and d) utilizing a pulse laser deposition method to grow the thin film on the substrate. The invention also provides a single-alpha-phase and c-oriented epitaxial iron-based superconducting thin film prepared according to the method.

Description

technical field [0001] The invention relates to the field of superconductivity, in particular to a method for preparing an epitaxial iron-based superconducting film and the epitaxial iron-based superconducting film prepared by the method. Background technique [0002] In early 2008, Japanese scientists discovered that LaFeAsO with a superconducting transition temperature of 26K 1-x f x Superconductors have opened up a new space for superconducting research. In the following three months, the superconducting transition temperature of the iron-based superconductor was raised to 55K, and four systems were developed. α-FeSe x It is the fourth iron-based superconducting system discovered, referred to as the "11" system, which was first reported by Wu Maokun's research group at the Taiwan Institute of Physics in mid-August 2008. Its structure is relatively simple, does not contain arsenic, and is the least toxic of the four major systems, so it has attracted widespread attenti...

Claims

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Application Information

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IPC IPC(8): H01L39/24C23C14/22C23C14/06H01L39/02
Inventor 曹立新李位勇韩烨张帅许波赵柏儒
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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