83 results about "Superconducting thin films" patented technology

The present invention discloses a terahertz dynamic inductive thermal radiometer, comprising a superconducting thin film layer, a terahertz antenna, a cutoff layer, and a Si substrate. The superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, which is deposited on the Si substrate. The superconducting thin film layer includes a superconducting feeder, an interdigital capacitor, and an inductor coil. The interdigital capacitor and the inductor coil are connected in parallel to form an oscillating circuit. The terahertz antenna is adjacent to the inductor coil and is used to convert received terahertz signals into heat, causing the inductor coil to produce an inductance change. This inductance change causes the resonant frequency within the interdigital capacitor to change. The superconducting feeder receives the changed resonant frequency, and the changed resonant frequency can be used to obtain the light intensity of the terahertz signal, thereby completing terahertz signal detection. The terahertz dynamic inductive thermal radiometer can accurately detect terahertz signals and is less affected by temperature. The present invention also provides a method for preparing the terahertz dynamic inductive thermal radiometer and a terahertz detection system.

The invention discloses a grid-control superconducting nanowire low-temperature thermometer and a preparation method thereof, and relates to the technical field of superconducting electronics and low-temperature detection. Comprising a substrate and a superconducting layer, and the superconducting layer comprises a grid electrode, a superconducting nanowire and an inductor; the grid electrode is vertical to the superconductive nanowire, has a distance from the superconductive nanowire and is used for electric field regulation and control; the superconducting nanowire is connected with the inductor and is used for responding to particles injected into the grid electrode and outputting a pulse signal; the inductor is connected with the superconducting nanowire and is used for inhibiting a latch-up effect under high bias current; the superconducting layer material is a superconducting thin film material with a superconducting transition temperature Tc exceeding a measurement temperature zone; according to the invention, (quasi) particle injection in the critical current process of the superconducting nanowire is regulated and controlled through the grid electric field, high-precision measurement of the low temperature is realized in combination with nonlinear response of the pulse counting rate and the temperature, and the device and the method have the advantages of wide temperature zone measurement, low noise, high sensitivity, low power consumption, small self-heating, simple measurement system and low cost.

The invention provides a superconducting quantum bit structure and a preparation method thereof. The superconducting quantum bit structure comprises a superconducting thin film layer, and the surface and the side wall of the superconducting thin film layer are covered with protective layers. The preparation method comprises the following steps: sequentially depositing a superconducting layer and a coating photoresist layer on the surface of a substrate; patterning the photoresist layer, etching the exposed superconducting layer, and removing the residual photoresist on the surface of the superconducting layer to obtain a superconducting thin film layer; and removing the oxide layer on the surface of the superconducting thin film layer under a vacuum condition, and depositing a protective layer on the surface and the side wall of the superconducting thin film layer to obtain the superconducting quantum bit structure. The surface and the side wall of the superconducting quantum bit structure are all covered with a protective layer, the isotropic oxidation process is effectively inhibited, and especially the key problem of side wall oxidation is solved. The preparation method is highly compatible with an existing superconducting quantum bit preparation process, and can be conveniently integrated into an existing production line.

The invention relates to the technical field of detection, and discloses an MCP image enhancement high-sensitivity detection system, which comprises a photoelectric cathode, which adopts a multi-quantum well structure and a surface plasma enhancement technology, is used for converting incident photons into primary electrons, and comprises a quantum well formed by gallium arsenide and gallium aluminum arsenide; a microchannel plate for amplifying primary electrons generated from the photocathode; the microchannel plate is coated with a superconducting thin film so as to reduce noise and improve electronic gain; various types of sensors include optical sensors, thermal imaging sensors, acoustic sensors, and chemical sensors. By adopting a multi-quantum well structure and a surface plasma enhanced photoelectric cathode, the spectral response and photoelectric conversion efficiency are remarkably improved, and the sensitivity and response speed of the system to non-specific wavelengths are enhanced. Meanwhile, the microchannel plate coated with the superconducting thin film effectively reduces the noise level, improves the signal definition and the image quality, and solves the high-gain limitation of a traditional system.

The invention discloses a high-temperature superconducting filter and a multi-layer stacked three-dimensional integrated design method thereof, and belongs to the technical field of microwave communication, the high-temperature superconducting filter comprises multiple layers of superconducting medium substrates and a high-temperature superconducting thin film layer, air with a certain thickness is arranged between the two layers of superconducting medium substrates, and the high-temperature superconducting thin film layer is arranged between the two layers of superconducting medium substrates. The lower surface of the bottom superconducting medium substrate is grounded; the high-temperature superconducting thin film layer is located on the upper surface of the superconducting medium substrate, a filter circuit is constructed on the high-temperature superconducting thin film layer, and the filter circuit comprises one or more resonator structures, one or more microstrip branch structures and one or more feeder line structures. The resonator structure is connected with the input feeder line and the output feeder line, and the novel double-layer high-temperature superconducting filter with the multiple transmission zero points has the advantages of being low in loss, wide in stop band, high in integration level, multiple in zero point, flexible in design and the like.

This invention discloses a method for fabricating a highly sensitive long-wavelength infrared superconducting single-photon detector. It fully utilizes and amplifies the acoustic mismatch effect between the superconducting thin film and the substrate to achieve phonon localization enhancement on the superconducting nanowires. The effect of this innovative design is to increase the energy utilization rate of long-wavelength infrared photons on the superconducting nanowires, thereby improving the response sensitivity of the superconducting nanowires to long-wavelength infrared photon signals. Compared to existing designs that reduce the cross-sectional size of the superconducting nanowires, create holes beneath the nanowires, or increase the buffer layer, this invention is easier to implement and has higher scalability.

The invention discloses a high-integration superconducting quantum device flip chip based on an NbN film and a preparation method of the high-integration superconducting quantum device flip chip based on the NbN film, and the chip is sequentially provided with a lower-layer chip and an upper-layer chip from bottom to top, the lower-layer chip comprises a lower-layer substrate, a first superconducting thin film and a first metal column, and the upper-layer chip comprises an upper-layer substrate, a second superconducting thin film and a second metal column. Wherein a coplanar waveguide transmission line and a first overlay alignment mark are manufactured on the first superconducting film, and a resonator and a second overlay alignment mark are manufactured on the second superconducting film; a flip-chip technology is adopted between the upper-layer chip and the lower-layer chip, and the first metal columns and the second metal columns are connected together by aligning the first overlay alignment marks of the lower-layer chip with the second overlay alignment marks of the upper-layer chip one by one, so that the upper-layer chip and the lower-layer chip are electrically connected. According to the invention, the occupied area of the device is reduced and the integration level is improved.

The application provides a magnetic levitation structure based on double-sided superconducting film, a control method, a system and an application, relates to the technical field of magnetic levitation, and comprises the magnetic levitation structure based on double-sided superconducting film provided by the application, which comprises a suspension force regulation and control unit, a permanent magnet array and a refrigeration unit. The suspension force regulation and control unit comprises double-sided high-temperature superconducting film, a conductive pattern, a printed circuit board and terminal wires. The double-sided high-temperature superconducting film is etched with the conductive pattern on both sides. At least one pair of terminal wires is connected to each side of the double-sided high-temperature superconducting film. The lead of the terminal wire is connected to the conductive pattern, and the lead terminal of the terminal wire is connected to the printed circuit board. The suspension force regulation and control unit is arranged in the magnetic field of the permanent magnet array. The refrigeration unit comprises a container and a cooling medium contained in the container, and the suspension force regulation and control unit is immersed in the cooling medium. The application realizes effective regulation and control of the suspension force of the magnetic levitation structure.

Provided is a superconducting wire. The superconducting wire comprises a substrate, a superconducting film on the substrate and a pinning center in the superconducting film. The superconducting film includes Y1-xRExBCO and the pinning center has an additive of Ba2YNbO6.

A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.

The invention relates to a method for regulating and controlling superconducting transition temperature. The method comprises the following steps: providing a substrate; magnetron sputtering is carried out on the substrate to form a superconducting thin film, and the superconducting thin film comprises the substrate and a superconducting thin film layer located on the substrate; and the target superconducting thin film is placed in an anodic oxidation tank to be oxidized with target constant voltage or target constant current, electrolyte is stored in the anodic oxidation tank, a superconducting thin film layer of the superconducting thin film faces a cathode, and a substrate of the superconducting thin film is fixed to an anode. At least the superconducting thin film can be placed in an anodic oxidation tank to be oxidized at target constant voltage or target constant current, the generation thickness of an oxidation layer and the proportion between the oxidation layer and an unoxidized layer are controlled, and then the temperature of the superconducting thin film is regulated and controlled.

The application discloses a method for preparing large-size rare earth barium copper oxygen superconducting target material and relates to the technical field of superconducting target material preparation. The method realizes the compatibility of a single set of molds with various specifications of target materials by optimizing the design of cold isostatic pressing molds, adopting a composite mold structure comprising upper and lower cover plates, a cylinder, isolation pads, a replaceable elastic lining and a clamp, and can press multiple target materials at a time by setting multiple isolation pads, and is suitable for the preparation of target materials with a diameter of 8-12 inches and a thickness of 10-20 mm. The preparation process comprises the following steps of mold assembly, superconducting powder filling and vibration treatment, segmented pressure cold isostatic pressing treatment, blank shaping, oxygen atmosphere sintering and grinding machine processing. The mold generality design and batch pressing technology of the application significantly improve the production efficiency, reduce the mold cost and powder loss, and at the same time, ensure the density (relative density 80%-85%) and surface flatness (less than or equal to 0.5 mm) of the target material, and meet the strict requirements of large-size target materials for high-end superconducting thin film preparation such as pulsed laser deposition.

Embodiments of the present invention related to a neuromimetic circuit including a transmitter circuit to receive the threshold signal from a superconducting optoelectronic neuron and convert the small current pulse to a voltage pulse sufficient to produce light from a semiconductor diode. This light is the signal used to communicate between neurons in the network. The transmitter circuit in accordance with the present invention includes an amplifier chain that comprises two Josephson junctions, a superconducting thin-film current-gated current amplifier, and a superconducting thin-film current-gated voltage amplifier. The transmitter circuit in accordance with the present invention enable an amplification sequence that allows neuronal firing of about 20 MHz with power density sufficiently low to be cooled with standard 4He cryogenic systems operating at 4.2 K.

The invention provides a multifunctional superconducting heterogeneous thin film composite structure, a device and a preparation method thereof. The multifunctional superconducting heterogeneous thin film composite structure is formed by sequentially growing and preparing a first layer of superconducting thin film, a dielectric layer thin film, a second layer of superconducting thin film, a barrier layer thin film and a third layer of superconducting thin film on a substrate in situ. Wherein the first-layer superconducting film-dielectric layer film-second-layer superconducting film structure can be applied to preparation of a parallel-plate capacitor, and the second-layer superconducting film-barrier layer film-third-layer superconducting film structure can be applied to preparation of a Josephson junction. On the basis, the superconducting electronic device with multiple functions can be realized. The preparation of the multifunctional superconducting heterogeneous film composite structure is realized through the magnetron sputtering method and the chemical vapor deposition method, the equipment cost is reduced, the process stability is high, the film uniformity is high, the machinability is strong, and the application scene is wide.

In quantum devices with Josephson junctions, the generation of TLS defects and the variation in their characteristics are suppressed. [Solution] A first superconductor film, a second superconductor film, a first insulator film, and a third superconductor film, each having a cubic crystal structure, are sequentially formed by epitaxial growth on the (100) or (111) plane of a substrate having a cubic crystal structure. The second superconductor film, the first insulator film, and the third superconductor film are patterned to form a stack including the second superconductor film, the first insulator film, and the third superconductor film. The first superconductor film is patterned using the stack as a mask. After patterning the first superconductor film, the side surfaces of the stack are wet-etched. A second insulator film is formed to cover the wet-etched side surfaces of the stack. After forming the second insulator film, a fourth superconductor film is formed in contact with the third superconductor film. The stack forms a Josephson junction, and the first superconductor film has a lattice constant between that of the substrate and that of the second superconductor film.

The invention provides a superconducting thin film and preparation process equipment thereof. In the process equipment, a sputtering system and a substrate system are opposite up and down in a reaction chamber; the working gas inlet channel is located at the position, close to the target, of the shell of the reaction chamber, the reaction gas inlet channel is located at the position, close to the substrate system, of the shell of the reaction chamber, and the exhaust port is located in the shell of the side wall of the reaction chamber. The reaction gas inlet channel is arranged to be far away from the target material, the target poisoning phenomenon is avoided, and the magnetron sputtering efficiency and the superconducting thin film deposition rate are improved; meanwhile, the working gas inlet channel is arranged close to the target material, so that plasmas generated by the target material are more stable, and the critical temperature and the critical current density of the superconducting thin film material are enhanced; in addition, the reaction gas inlet channel is higher than the substrate, reaction products are prevented from depositing on the surface of the gas inlet channel, and the deposition rate of the superconducting film is improved. And finally, a working gas inlet channel is arranged to be lower than the target material, so that target material atoms are prevented from being sputtered by bombardment on the surface of the gas inlet channel to pollute the reaction chamber and the superconducting film.

A first superconductor film, a second superconductor film, a first insulator film, and a third superconductor film each having a cubic crystal structure are sequentially formed on a (100) plane or a (111) plane of a substrate having a cubic crystal structure by an epitaxial growth method. The second superconductor film, the first insulator film, and the third superconductor film are patterned to form a stack including the second superconductor film, the first insulator film, and the third superconductor film. The first superconductor film is patterned using the stacked body as a mask. After the first superconductor film is patterned, a side surface of the stack is wet etched. A second insulator film covering the side surface of the wet etched stack is formed. After the second insulator film is formed, a fourth superconductor film in contact with the third superconductor film is formed.

Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detection of the terahertz signal. The terahertz kinetic inductance bolometer can detect the terahertz signal accurately and is less affected by the temperature. The present invention also provides a preparation method of the terahertz kinetic inductance bolometer and a terahertz detection system.

The invention provides a Tl-series superconducting thin film and a preparation method thereof, and belongs to the field of superconducting thin film materials. The preparation method of the Tl-series superconducting thin film provided by the invention comprises the following steps: mixing nitrate or acetate of metal, ethylenediaminetetraacetic acid, a water-soluble high-molecular polymer and water to obtain precursor sol; the metals are thallium, barium, calcium and copper; the molar ratio of thallium to barium to calcium to copper to ethylenediamine tetraacetic acid is (2-3): 2: 1: 2: (7-8); coating a substrate with the precursor sol to obtain a precursor film; and carrying out heat treatment on the precursor thin film in an oxygen atmosphere under a closed condition to obtain the Tl-series superconducting thin film. The Tl-series superconducting thin film obtained by the preparation method provided by the invention presents a Tl-2212 phase, no impurity phase is generated, and the critical transition temperature can reach 100K and is close to the Tl-2212 theoretical superconducting transition temperature.

The invention relates to the technical field of superconducting materials, and discloses a multi-element rare earth barium copper oxide high-temperature superconducting thin film and a preparation method thereof. In order to solve the technical problems that the pinning effect of an artificial magnetic flux pinning center of a high-temperature superconducting material is poor and the critical current density under a high magnetic field is low, the rare earth barium copper oxide is prepared by co-doping at least three rare earth elements at a rare earth site; an artificial magnetic flux pinning center of a perovskite oxide BaZrO3 and a double perovskite oxide Ba2YNbO6 is introduced into the rare earth barium copper oxide, and a multi-scale pinning system from the atomic scale to the nanoscale is formed in the superconducting thin film through atomic scale mismatch and introduction of the artificial magnetic flux pinning center; effective pinning of magnetic flux vortexes of different states and different sizes is achieved, and therefore the critical current density of the high-temperature superconducting material under the low-temperature high magnetic field is effectively improved finally.

The invention relates to a Josephson probe, a preparation method and a superconductive Josephson probe microscope. The preparation method comprises the following steps: providing a quartz nano needle tip of which the outer circumference is sequentially provided with a first groove, a second groove, a third groove and a fourth groove at equal intervals; the first groove of the quartz nanometer needle tip is right opposite to the superconducting sputtering target material, the included angle between the axis of the quartz nanometer needle tip and the horizontal direction is theta, and a first superconducting thin film is deposited through magnetron sputtering; and the quartz nanometer needle tip is turned over symmetrically, so that the third groove is right opposite to the superconducting sputtering target material, a second superconducting thin film is deposited through magnetron sputtering, and the first superconducting thin film and the second superconducting thin film form a Josephson junction at the tip of the quartz nanometer needle tip. The high-quality ultra-wideband Josephson probe is prepared through the two-step self-calibration thin film deposition process, effective regulation and control of the detection frequency from the microwave frequency band to the millimeter wave frequency band is achieved, and the application potential of a Josephson probe microscope in the aspect of high-frequency integrated circuit characterization is greatly expanded.

The invention provides a non-vacuum preparation method of an infinite-layer nickel-based superconducting thin film. The main conception of the method is as follows: dissolving a metal cation soluble precursor in a solvent according to a stoichiometric ratio, and spin-coating the metal cation soluble precursor on the surface of a single crystal nickel-based perovskite oxide substrate to form a thin film precursor; annealing in a high oxygen pressure atmosphere to obtain a thermodynamic metastable-phase perovskite structure intermediate; and finally, converting the thin film into the infinite-layer nickel-based superconducting thin film by using a reduction condition. The method has the advantages that the dependence on vacuum equipment is completely avoided, the operation is simple and convenient, the cost is low, and flexible regulation and high-repeatability preparation of film components can be realized. The prepared infinite-layer nickel-based superconducting thin film has an abnormal superconducting characteristic, the superconducting temperature of the thin film can break through the McMilan limit, and the thin film shows a high upper critical field and critical current density. The material has application value in the fields of superconducting quantum interference devices (SQUID), strong field magnet coils, high-frequency low-loss power transmission cables and magnetic confinement nuclear fusion device magnet systems.

The invention discloses a wide-temperature-range high-performance anti-laser reflecting film and a preparation method thereof.The wide-temperature-range high-performance anti-laser reflecting film comprises a substrate, a first superconducting functional layer, a high-low-refractive-index multi-layer medium reflecting stack and a second superconducting functional layer, the first superconducting functional layer is arranged above the substrate, the high-low-refractive-index multi-layer medium reflecting stack is arranged above the first superconducting functional layer, and the second superconducting functional layer is arranged above the second superconducting functional layer; the second superconductive functional layer is arranged above the high-low refractive index multilayer dielectric reflection stack, the first superconductive functional layer and the second superconductive functional layer simultaneously adopt low-temperature superconductive films or high-temperature superconductive films, the metal transition layer is deposited on the substrate, the first superconductive functional layer is deposited on the metal transition layer, and the second superconductive functional layer is deposited on the high-low refractive index multilayer dielectric reflection stack. The high-low refractive index multi-layer dielectric reflection stack is deposited on the first superconductive functional layer, the second superconductive functional layer is prepared on the high-low refractive index multi-layer dielectric reflection stack, and annealing post-treatment is performed, so that the prepared reflection film has the characteristics of wide temperature range and high reflectivity, and the performance of resisting laser damage is improved.

The present invention relates to an encapsulated superconducting quantum flip chip and a fabrication method. The encapsulated superconducting quantum flip chip comprises, arranged to be stacked, a first substrate, a first superconducting thin film, metal fences, a second superconducting thin film and a second substrate. The first superconducting thin film comprises a first circuit layer; the second superconducting thin film comprises a second circuit layer and a Josephson junction; the metal fences surround the peripheries of the first circuit layer, the second circuit layer and the Josephson junction. The structural design of the metal fences helps to first make the metal fences and then fabricate a circuit structure and the Josephson junction. Further provided is a fabrication method for the encapsulated superconducting quantum flip chip, which helps to improve the performance of quantum bit devices.

A radiant heater susceptor assembly used in a deposition reactor provides heat input and controls the temperature of a substrate tape as well as minimizes the build-up of errant deposition material. The radiant heater heats a substrate tape within the reactor upon which one or more thin films are deposited, particularly high temperature superconductor (HTS) thin films produced in a MOCVD reactor.

The invention discloses a local testing device and method for microwave surface resistance of a high-temperature superconducting film, and relates to the technical field of electronics, the testing device comprises an Rs testing seat, a calibration assembly, a supporting plate and a sealing cavity, the Rs testing seat comprises an Rs testing cavity, a dielectric cylinder assembly and an annular metal film, the dielectric cylinder assembly is composed of a dielectric cylinder and a dielectric disc which are integrally formed and coaxially arranged, and the annular metal film is arranged on the dielectric cylinder assembly. The dielectric disc is located at the bottom of the dielectric cylinder, and the outer side of the lower surface of the dielectric disc is plated with an annular metal film. By plating the annular metal film on the lower surface of the dielectric disc of the dielectric cylinder assembly, the problem that a metal ring in an existing testing device is not coaxial and is prone to deformation is solved, continuous and stable testing conditions are provided for local testing of the microwave surface resistance of the high-temperature superconducting thin film, and high sensitivity and accuracy of testing are guaranteed.

The invention relates to the technical field of superconduction, in particular to a preparation method, device and equipment of a coating conductor of a substrate and a storage medium. The method comprises the following steps: S1, acquiring related parameters of a target film, wherein the related parameters of the target film comprise at least one of material chemical compatibility, material expansion coefficient and lattice constant of the target film; s2, screening a buffer layer material meeting the conditions of the material chemical compatibility, the material expansion coefficient and / or the lattice constant of the target film from a material library; s3, acquiring the preset growth temperature and thickness of the target film; s4, determining target growth temperature and thickness corresponding to the target buffer layer material; and S5, preparing the coating conductor according to the target growth temperature and thickness. According to the method, the most suitable buffer layer can be selected, and the superconducting performance can be improved when the superconducting thin film is prepared on the metal base band with poor texture quality.

The invention relates to a preparation method of a low-temperature superconducting film, and belongs to the technical field of superconducting materials. According to the superconducting thin film, the transition buffer layer and the main functional layer are sequentially formed on the surface of the substrate by optimizing the preparation process, the layers are compactly combined, and the residual stress between the layers is remarkably reduced. The result of the embodiment shows that compared with a contrast, the interlayer residual stress of the prepared superconducting thin film is reduced to 78.3 MPa, the generation of interlayer microcracks is reduced, the cross section has no obvious crack defect, and excellent mechanical stability and compactness are shown. Meanwhile, the superconducting thin film shows a higher critical transition temperature Tc of 25.2 K and a higher critical current density Jc of 1.21 * 10 < 6 > A / cm < 2 >, the proportion is remarkably improved compared with a contrast, and the overall performance is more stable and reliable. According to the technical scheme, the problems of cracks and performance reduction caused by stress concentration and interlayer discontinuity of an existing oxide superconducting thin film are effectively solved, and the oxide superconducting thin film has good industrial application prospects.

The invention provides an ion irradiation-based superconducting thin film and a thermal property regulation and control method of a device thereof, which comprises the following steps of: S1, providing a substrate, and growing a superconducting thin film on the substrate; s2, preparing a superconducting device with a micron-scale or nano-scale line width structure; s3, performing ion implantation analog simulation on the superconducting thin film and the superconducting device by adopting SRIM software, and determining an ion type, incident energy, an incident angle and an ion implantation dose; s4, according to the data determined in the previous step, performing ion irradiation treatment on the superconducting thin film and the superconducting device by adopting ion injection equipment; and S5, testing the thermal properties of the superconducting thin film and the superconducting device after the ion radiation treatment. The thermal properties of the superconducting thin film and the device thereof can be accurately regulated and controlled without changing the chemical components of the material, the post-processing optimization can be realized, the sensitivity, the response speed and the working stability of the superconducting device can be accurately regulated and controlled, and the method has important scientific significance and application value.