60 results about "Superconducting thin films" patented technology

The invention discloses a grid-control superconducting nanowire low-temperature thermometer and a preparation method thereof, and relates to the technical field of superconducting electronics and low-temperature detection. Comprising a substrate and a superconducting layer, and the superconducting layer comprises a grid electrode, a superconducting nanowire and an inductor; the grid electrode is vertical to the superconductive nanowire, has a distance from the superconductive nanowire and is used for electric field regulation and control; the superconducting nanowire is connected with the inductor and is used for responding to particles injected into the grid electrode and outputting a pulse signal; the inductor is connected with the superconducting nanowire and is used for inhibiting a latch-up effect under high bias current; the superconducting layer material is a superconducting thin film material with a superconducting transition temperature Tc exceeding a measurement temperature zone; according to the invention, (quasi) particle injection in the critical current process of the superconducting nanowire is regulated and controlled through the grid electric field, high-precision measurement of the low temperature is realized in combination with nonlinear response of the pulse counting rate and the temperature, and the device and the method have the advantages of wide temperature zone measurement, low noise, high sensitivity, low power consumption, small self-heating, simple measurement system and low cost.

The invention provides a superconducting quantum bit structure and a preparation method thereof. The superconducting quantum bit structure comprises a superconducting thin film layer, and the surface and the side wall of the superconducting thin film layer are covered with protective layers. The preparation method comprises the following steps: sequentially depositing a superconducting layer and a coating photoresist layer on the surface of a substrate; patterning the photoresist layer, etching the exposed superconducting layer, and removing the residual photoresist on the surface of the superconducting layer to obtain a superconducting thin film layer; and removing the oxide layer on the surface of the superconducting thin film layer under a vacuum condition, and depositing a protective layer on the surface and the side wall of the superconducting thin film layer to obtain the superconducting quantum bit structure. The surface and the side wall of the superconducting quantum bit structure are all covered with a protective layer, the isotropic oxidation process is effectively inhibited, and especially the key problem of side wall oxidation is solved. The preparation method is highly compatible with an existing superconducting quantum bit preparation process, and can be conveniently integrated into an existing production line.

This invention discloses a method for fabricating a highly sensitive long-wavelength infrared superconducting single-photon detector. It fully utilizes and amplifies the acoustic mismatch effect between the superconducting thin film and the substrate to achieve phonon localization enhancement on the superconducting nanowires. The effect of this innovative design is to increase the energy utilization rate of long-wavelength infrared photons on the superconducting nanowires, thereby improving the response sensitivity of the superconducting nanowires to long-wavelength infrared photon signals. Compared to existing designs that reduce the cross-sectional size of the superconducting nanowires, create holes beneath the nanowires, or increase the buffer layer, this invention is easier to implement and has higher scalability.

The application provides a magnetic levitation structure based on double-sided superconducting film, a control method, a system and an application, relates to the technical field of magnetic levitation, and comprises the magnetic levitation structure based on double-sided superconducting film provided by the application, which comprises a suspension force regulation and control unit, a permanent magnet array and a refrigeration unit. The suspension force regulation and control unit comprises double-sided high-temperature superconducting film, a conductive pattern, a printed circuit board and terminal wires. The double-sided high-temperature superconducting film is etched with the conductive pattern on both sides. At least one pair of terminal wires is connected to each side of the double-sided high-temperature superconducting film. The lead of the terminal wire is connected to the conductive pattern, and the lead terminal of the terminal wire is connected to the printed circuit board. The suspension force regulation and control unit is arranged in the magnetic field of the permanent magnet array. The refrigeration unit comprises a container and a cooling medium contained in the container, and the suspension force regulation and control unit is immersed in the cooling medium. The application realizes effective regulation and control of the suspension force of the magnetic levitation structure.

A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.

The application discloses a method for preparing large-size rare earth barium copper oxygen superconducting target material and relates to the technical field of superconducting target material preparation. The method realizes the compatibility of a single set of molds with various specifications of target materials by optimizing the design of cold isostatic pressing molds, adopting a composite mold structure comprising upper and lower cover plates, a cylinder, isolation pads, a replaceable elastic lining and a clamp, and can press multiple target materials at a time by setting multiple isolation pads, and is suitable for the preparation of target materials with a diameter of 8-12 inches and a thickness of 10-20 mm. The preparation process comprises the following steps of mold assembly, superconducting powder filling and vibration treatment, segmented pressure cold isostatic pressing treatment, blank shaping, oxygen atmosphere sintering and grinding machine processing. The mold generality design and batch pressing technology of the application significantly improve the production efficiency, reduce the mold cost and powder loss, and at the same time, ensure the density (relative density 80%-85%) and surface flatness (less than or equal to 0.5 mm) of the target material, and meet the strict requirements of large-size target materials for high-end superconducting thin film preparation such as pulsed laser deposition.

Embodiments of the present invention related to a neuromimetic circuit including a transmitter circuit to receive the threshold signal from a superconducting optoelectronic neuron and convert the small current pulse to a voltage pulse sufficient to produce light from a semiconductor diode. This light is the signal used to communicate between neurons in the network. The transmitter circuit in accordance with the present invention includes an amplifier chain that comprises two Josephson junctions, a superconducting thin-film current-gated current amplifier, and a superconducting thin-film current-gated voltage amplifier. The transmitter circuit in accordance with the present invention enable an amplification sequence that allows neuronal firing of about 20 MHz with power density sufficiently low to be cooled with standard 4He cryogenic systems operating at 4.2 K.

The invention provides a multifunctional superconducting heterogeneous thin film composite structure, a device and a preparation method thereof. The multifunctional superconducting heterogeneous thin film composite structure is formed by sequentially growing and preparing a first layer of superconducting thin film, a dielectric layer thin film, a second layer of superconducting thin film, a barrier layer thin film and a third layer of superconducting thin film on a substrate in situ. Wherein the first-layer superconducting film-dielectric layer film-second-layer superconducting film structure can be applied to preparation of a parallel-plate capacitor, and the second-layer superconducting film-barrier layer film-third-layer superconducting film structure can be applied to preparation of a Josephson junction. On the basis, the superconducting electronic device with multiple functions can be realized. The preparation of the multifunctional superconducting heterogeneous film composite structure is realized through the magnetron sputtering method and the chemical vapor deposition method, the equipment cost is reduced, the process stability is high, the film uniformity is high, the machinability is strong, and the application scene is wide.

In quantum devices with Josephson junctions, the generation of TLS defects and the variation in their characteristics are suppressed. [Solution] A first superconductor film, a second superconductor film, a first insulator film, and a third superconductor film, each having a cubic crystal structure, are sequentially formed by epitaxial growth on the (100) or (111) plane of a substrate having a cubic crystal structure. The second superconductor film, the first insulator film, and the third superconductor film are patterned to form a stack including the second superconductor film, the first insulator film, and the third superconductor film. The first superconductor film is patterned using the stack as a mask. After patterning the first superconductor film, the side surfaces of the stack are wet-etched. A second insulator film is formed to cover the wet-etched side surfaces of the stack. After forming the second insulator film, a fourth superconductor film is formed in contact with the third superconductor film. The stack forms a Josephson junction, and the first superconductor film has a lattice constant between that of the substrate and that of the second superconductor film.

The invention provides a superconducting thin film and preparation process equipment thereof. In the process equipment, a sputtering system and a substrate system are opposite up and down in a reaction chamber; the working gas inlet channel is located at the position, close to the target, of the shell of the reaction chamber, the reaction gas inlet channel is located at the position, close to the substrate system, of the shell of the reaction chamber, and the exhaust port is located in the shell of the side wall of the reaction chamber. The reaction gas inlet channel is arranged to be far away from the target material, the target poisoning phenomenon is avoided, and the magnetron sputtering efficiency and the superconducting thin film deposition rate are improved; meanwhile, the working gas inlet channel is arranged close to the target material, so that plasmas generated by the target material are more stable, and the critical temperature and the critical current density of the superconducting thin film material are enhanced; in addition, the reaction gas inlet channel is higher than the substrate, reaction products are prevented from depositing on the surface of the gas inlet channel, and the deposition rate of the superconducting film is improved. And finally, a working gas inlet channel is arranged to be lower than the target material, so that target material atoms are prevented from being sputtered by bombardment on the surface of the gas inlet channel to pollute the reaction chamber and the superconducting film.

A first superconductor film, a second superconductor film, a first insulator film, and a third superconductor film each having a cubic crystal structure are sequentially formed on a (100) plane or a (111) plane of a substrate having a cubic crystal structure by an epitaxial growth method. The second superconductor film, the first insulator film, and the third superconductor film are patterned to form a stack including the second superconductor film, the first insulator film, and the third superconductor film. The first superconductor film is patterned using the stacked body as a mask. After the first superconductor film is patterned, a side surface of the stack is wet etched. A second insulator film covering the side surface of the wet etched stack is formed. After the second insulator film is formed, a fourth superconductor film in contact with the third superconductor film is formed.

Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detection of the terahertz signal. The terahertz kinetic inductance bolometer can detect the terahertz signal accurately and is less affected by the temperature. The present invention also provides a preparation method of the terahertz kinetic inductance bolometer and a terahertz detection system.

The invention provides a Tl-series superconducting thin film and a preparation method thereof, and belongs to the field of superconducting thin film materials. The preparation method of the Tl-series superconducting thin film provided by the invention comprises the following steps: mixing nitrate or acetate of metal, ethylenediaminetetraacetic acid, a water-soluble high-molecular polymer and water to obtain precursor sol; the metals are thallium, barium, calcium and copper; the molar ratio of thallium to barium to calcium to copper to ethylenediamine tetraacetic acid is (2-3): 2: 1: 2: (7-8); coating a substrate with the precursor sol to obtain a precursor film; and carrying out heat treatment on the precursor thin film in an oxygen atmosphere under a closed condition to obtain the Tl-series superconducting thin film. The Tl-series superconducting thin film obtained by the preparation method provided by the invention presents a Tl-2212 phase, no impurity phase is generated, and the critical transition temperature can reach 100K and is close to the Tl-2212 theoretical superconducting transition temperature.

The invention relates to the technical field of superconducting materials, and discloses a multi-element rare earth barium copper oxide high-temperature superconducting thin film and a preparation method thereof. In order to solve the technical problems that the pinning effect of an artificial magnetic flux pinning center of a high-temperature superconducting material is poor and the critical current density under a high magnetic field is low, the rare earth barium copper oxide is prepared by co-doping at least three rare earth elements at a rare earth site; an artificial magnetic flux pinning center of a perovskite oxide BaZrO3 and a double perovskite oxide Ba2YNbO6 is introduced into the rare earth barium copper oxide, and a multi-scale pinning system from the atomic scale to the nanoscale is formed in the superconducting thin film through atomic scale mismatch and introduction of the artificial magnetic flux pinning center; effective pinning of magnetic flux vortexes of different states and different sizes is achieved, and therefore the critical current density of the high-temperature superconducting material under the low-temperature high magnetic field is effectively improved finally.

The invention relates to a Josephson probe, a preparation method and a superconductive Josephson probe microscope. The preparation method comprises the following steps: providing a quartz nano needle tip of which the outer circumference is sequentially provided with a first groove, a second groove, a third groove and a fourth groove at equal intervals; the first groove of the quartz nanometer needle tip is right opposite to the superconducting sputtering target material, the included angle between the axis of the quartz nanometer needle tip and the horizontal direction is theta, and a first superconducting thin film is deposited through magnetron sputtering; and the quartz nanometer needle tip is turned over symmetrically, so that the third groove is right opposite to the superconducting sputtering target material, a second superconducting thin film is deposited through magnetron sputtering, and the first superconducting thin film and the second superconducting thin film form a Josephson junction at the tip of the quartz nanometer needle tip. The high-quality ultra-wideband Josephson probe is prepared through the two-step self-calibration thin film deposition process, effective regulation and control of the detection frequency from the microwave frequency band to the millimeter wave frequency band is achieved, and the application potential of a Josephson probe microscope in the aspect of high-frequency integrated circuit characterization is greatly expanded.

The invention provides a non-vacuum preparation method of an infinite-layer nickel-based superconducting thin film. The main conception of the method is as follows: dissolving a metal cation soluble precursor in a solvent according to a stoichiometric ratio, and spin-coating the metal cation soluble precursor on the surface of a single crystal nickel-based perovskite oxide substrate to form a thin film precursor; annealing in a high oxygen pressure atmosphere to obtain a thermodynamic metastable-phase perovskite structure intermediate; and finally, converting the thin film into the infinite-layer nickel-based superconducting thin film by using a reduction condition. The method has the advantages that the dependence on vacuum equipment is completely avoided, the operation is simple and convenient, the cost is low, and flexible regulation and high-repeatability preparation of film components can be realized. The prepared infinite-layer nickel-based superconducting thin film has an abnormal superconducting characteristic, the superconducting temperature of the thin film can break through the McMilan limit, and the thin film shows a high upper critical field and critical current density. The material has application value in the fields of superconducting quantum interference devices (SQUID), strong field magnet coils, high-frequency low-loss power transmission cables and magnetic confinement nuclear fusion device magnet systems.

The present invention relates to an encapsulated superconducting quantum flip chip and a fabrication method. The encapsulated superconducting quantum flip chip comprises, arranged to be stacked, a first substrate, a first superconducting thin film, metal fences, a second superconducting thin film and a second substrate. The first superconducting thin film comprises a first circuit layer; the second superconducting thin film comprises a second circuit layer and a Josephson junction; the metal fences surround the peripheries of the first circuit layer, the second circuit layer and the Josephson junction. The structural design of the metal fences helps to first make the metal fences and then fabricate a circuit structure and the Josephson junction. Further provided is a fabrication method for the encapsulated superconducting quantum flip chip, which helps to improve the performance of quantum bit devices.

The invention relates to a preparation method of a low-temperature superconducting film, and belongs to the technical field of superconducting materials. According to the superconducting thin film, the transition buffer layer and the main functional layer are sequentially formed on the surface of the substrate by optimizing the preparation process, the layers are compactly combined, and the residual stress between the layers is remarkably reduced. The result of the embodiment shows that compared with a contrast, the interlayer residual stress of the prepared superconducting thin film is reduced to 78.3 MPa, the generation of interlayer microcracks is reduced, the cross section has no obvious crack defect, and excellent mechanical stability and compactness are shown. Meanwhile, the superconducting thin film shows a higher critical transition temperature Tc of 25.2 K and a higher critical current density Jc of 1.21 * 10 < 6 > A / cm < 2 >, the proportion is remarkably improved compared with a contrast, and the overall performance is more stable and reliable. According to the technical scheme, the problems of cracks and performance reduction caused by stress concentration and interlayer discontinuity of an existing oxide superconducting thin film are effectively solved, and the oxide superconducting thin film has good industrial application prospects.

The invention relates to a two-stage SQUID on-chip filter and a preparation method thereof. The two-stage SQUID on-chip filter comprises a first superconducting thin film layer, an insulating layer, a second superconducting thin film layer and a resistance layer which are sequentially stacked in the direction perpendicular to a substrate. Wherein the first superconducting thin film layer, the insulating layer, the second superconducting thin film layer and the resistive layer are used for forming a capacitor, a plurality of resistors and a plurality of inductors, and the capacitor, the plurality of resistors and the plurality of inductors form an on-chip filter; wherein the on-chip filter is provided with a first control interface, a second control interface, a third control interface, a fourth control interface, a first connecting interface, a second connecting interface and a third connecting interface, the first connecting interface is connected with the input stage SQUID, the second connecting interface is connected with the amplification stage SQUID, and the third connecting interface is connected with the SQUID input coil. And at least high-frequency noise can be suppressed, so that the intrinsic noise of the secondary SQUID device is reduced.

The application discloses a superconducting wire single-photon detector, a preparation method and a superconducting wire temperature detection method, and relates to the technical field of superconductivity, wherein the superconducting wire single-photon detector comprises a substrate, a superconducting thin film material and a metal electrode, the superconducting thin film material and the metal electrode are arranged on the substrate, the superconducting thin film material forms a nanowire after electron beam lithography treatment, the metal electrode is located at two ends of the superconducting thin film material, and the substrate, the nanowire and the metal electrode are all encapsulated in an encapsulating material.The detector of the application can not only adapt to the low-temperature environment of liquid helium, but also stably generate and send voltage pulses, thereby realizing rapid response and early warning of the superconducting wire quenching.

The application provides a superconducting digital circuit inductance characterization structure and method, which comprises the following steps: a first superconducting film is connected between a first electrode layer of a first Josephson junction and a second superconducting film; a third superconducting film is connected between the second superconducting film and a first electrode layer of a second Josephson junction; a second electrode layer of the first Josephson junction and the second Josephson junction is grounded; a first electrode is connected to the first electrode layer of the first Josephson junction; a second electrode is connected to the first electrode layer of the second Josephson junction; a third electrode is connected between a first end and a second end of the first superconducting film; a first end of a fourth electrode is connected between a first end and a second end of the second superconducting film; and a fifth electrode is connected between a first end and a second end of the third superconducting film. The application obtains the values of different superconducting film inductances in one inductance characterization structure, simplifies the structure, and improves the efficiency and precision of inductance measurement in a superconducting digital circuit.

This invention provides a method for preparing infinite-layer nickel-based high-temperature superconducting thin films using metal-organic chemical vapor deposition (MOCVD). The main concept involves dissolving a soluble metal cation precursor in a solvent at a stoichiometric ratio, forming a thin film precursor on a single-crystal perovskite oxide substrate via MOCVD; subsequently, annealing under a high-oxygen-pressure atmosphere yields a thermodynamically metastable perovskite intermediate; finally, reduction conditions are used to transform it into an infinite-layer nickel-based high-temperature superconducting thin film. The advantages of this method include low cost, suitability for large-scale, large-area preparation of superconducting thin films, flexible control of film composition, and high reproducibility. The superconducting thin film prepared using this method exhibits zero resistance below 40 K and at ambient pressure, promising to promote the large-scale application of nickel-based superconducting materials in superconducting wires and tapes and in electronics, including high-field magnet coils, high-frequency low-loss cables, superconducting computers, superconducting antennas, and superconducting microwave devices.

The invention discloses a preparation method of a Bi-2212 superconducting film based on a polymer-assisted deposition method, relates to the technical field of semiconductor manufacturing, and solves the problems of poor precursor stability, complex process, long period, high cost, limited component control precision and non-uniform coating in the traditional technology. The preparation method comprises the following steps: preparing a precursor sol by taking bismuth nitrate pentahydrate, strontium nitrate, calcium nitrate tetrahydrate and copper nitrate trihydrate as ion sources, taking ethylenediamine tetraacetic acid as a complexing agent and taking polyethyleneimine as a high-molecular polymer, spin-coating the precursor sol on a LaAlO3 (001) substrate to prepare a sol film, and carrying out multi-stage heat preservation heat treatment and drying to obtain the Bi-2212 superconducting thin film. The Bi-2212 superconducting thin film prepared by the invention has relatively high phase purity and good superconductivity, the stoichiometric ratio of the raw materials can be accurately controlled, the preparation process is simple, the production equipment is less, the efficiency is high, the production cost is low, and the Bi-2212 superconducting thin film has great industrialization potential.

This invention relates to a method and system for suppressing etching residue on superconducting thin film wafers using a combined wet and dry etching process. The specific steps include: S1, acquiring wafer lithography rework information: reading the wafer's lithography rework record to obtain identification information indicating whether the wafer has undergone lithography rework and the number of rework cycles; S2, rotating wet source blocking treatment; S3, optical inspection and drying treatment before dry etching; S4, dry adaptive etching and cyclic cleaning; S5, wet purification treatment: after etching, the wafer is immersed in a buffer oxide etching tank unit for cleaning, and finally enters a drying tank unit for drying. This invention has the following advantages: while ensuring etching effect, it minimizes sputtering damage to the superconducting thin film by ions, avoids the generation of oxygen vacancy defects and lattice distortion, and effectively preserves the intrinsic superconducting properties of the superconducting thin film wafer.

This invention discloses a method for preparing superconducting tapes. The method includes: inkjet printing a barium copper propionate precursor solution onto a metal substrate, followed by low-temperature thermal decomposition to obtain a barium copper oxide pyrolysis intermediate film; inkjet printing a rare earth oxide precursor solution onto the barium copper oxide pyrolysis intermediate film, followed by another low-temperature thermal decomposition to obtain a rare earth-barium copper oxide composite film; and subjecting the rare earth-barium copper oxide composite film to high-temperature heat treatment to obtain the superconducting tape. This method allows for continuous variation in the thickness of the superconducting film in the superconducting tape, facilitating the study of the effects of different stoichiometric ratios of Ba and Cu, and different diffusion distances, on the orientation growth of the superconducting tape.

The invention discloses a high-temperature superconducting tape coating device capable of dynamically regulating and controlling the uniformity of a flow field and a temperature field, and relates to the technical field of superconducting material preparation equipment. Through the synergistic effect of the multi-area annular spraying head and the vertical spraying assembly and through a dynamic adjusting system, gradient temperature regulation and control are supported, the temperature uniformity of the surface of the substrate is improved, and the thermal response time is shortened; and meanwhile, a doping process is adapted, and the gas flow ratio is dynamically adjusted, so that the uniformity of a flow field on the surface of the substrate is maintained within a certain range. The device is suitable for large-scale preparation of rare earth doped YBCO and other high-temperature superconducting materials, the performance consistency of the superconducting thin film can be remarkably improved, and key equipment support is provided for industrial application of high-field magnets, superconducting power transmission and the like. Through the innovative spraying structure design and the intelligent control strategy, the bottleneck problem of temperature and flow field regulation and control in the MOCVD technology is solved, and stability, expandability and cost benefits required by industrial application are achieved.

The invention belongs to the technical field of high-temperature superconducting materials, and particularly relates to a target material for growing a CuC-1223 superconducting thin film through PLD and a preparation method and application of the target material. Wherein the molar ratio of the three metal elements of Ba, Ca and Cu is 2: (2-3): (3.5-4.5); and the three metal elements of Ba, Ca and Cu are uniformly distributed under the nanoscale. When the target material provided by the invention is used for PLD deposition, plasma plume with stable components and accurate stoichiometric ratio can be provided, so that an epitaxial film with few impure phases and high crystal quality is grown. According to the thin film, the intrinsic superconducting characteristic of the CuC-1223 phase can be more fully reflected, the higher superconducting critical temperature (Tc) and the more excellent current-carrying performance are obtained, the preparation process is good in reproducibility, the target batch consistency is high, and a solid foundation is provided for reliable and repeated preparation of the high-performance superconducting thin film.

The invention provides a Josephson junction. The Josephson junction comprises a barrier layer arranged between a first superconducting thin film layer and a second superconducting thin film layer, the barrier layer comprises any one of an oxide layer, a nitride layer and an amorphous metal or amorphous alloy layer. According to the Josephson junction, the barrier layer with high compactness, high flatness and excellent physical and chemical properties is arranged through an auxiliary method, the surfaces of the first superconducting thin film layer and the second superconducting thin film layer are improved, defects of a parasitic two-level system (TLS) are reduced, and quantum bit performance such as coherence time is improved.

The application discloses a kind of high-efficiency measurement high-temperature superconducting film microwave surface impedance device and method, belong to electronics technical field, device includes test probe, calibration probe, metal plate and sealed cavity, the open type bottom end surface of test probe is test plane, calibration probe and the structure of test probe are completely same, and the mirror image symmetry of two about test plane;The microwave surface resistance of metal plate is known;By with the calibration probe, metal plate or the detachable measured HTS film being placed in test plane, and being covered with sealed cavity, the working temperature of the measured HTS film is placed respectively under no-load quality factor and resonance frequency test, and the R S And X S Of the measured HTS film is obtained by calculation.The application can simultaneously measure the microwave surface impedance of the front and back of the measured HTS film, greatly improve the testing efficiency while ensuring the accuracy of the test results, suitable for mass industrial testing of HTS film, and suitable for widely used 2-inch and above size HTS film.