3results about How to "Resolve Sensitivity" patented technology

This invention provides a field-effect transistor (FET) gas sensor and its fabrication method, comprising: providing a clean substrate; forming a dielectric layer on the substrate; forming a source and a drain on the dielectric layer; forming a two-dimensional material layer between the source and drain; and forming an organic layer on the source, drain, and two-dimensional material layer. The heterojunction channel formed by the two-dimensional material layer and the organic layer enables the gas sensor to achieve stable and sensitive gas sensing. Simultaneously, by using the substrate as the bottom gate, in conjunction with the source and drain, a gate-controlled gas response function can be achieved. Thus, the gas sensor possesses excellent electrical performance and operational stability while exhibiting superior gas response sensitivity, solving the problem of how to improve the sensitivity and operational stability of gas sensors.