Positive dry film photoresist and composition for preparing the same
A technology of photoresist and photoresist layer, which is applied in the direction of photomechanical equipment, optics, photoplate making process of pattern surface, etc., and can solve the problems of reduced resolution and sensitivity, poor pattern design, etc.
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Embodiment 1
[0124] Prepare a solution comprising the following: cresol novolac resin as an alkali-soluble resin; all based on 100 parts by weight of the above-mentioned alkali-soluble resin, 34 parts by weight of 1,2-naphthoquinone-2-diazide-5 as a photosensitive compound -sulfonyl chloride; 3.6 parts by weight of 2,3,4-trihydroxybenzophenone as a sensitivity improving agent; 165 parts by weight of methyl ethyl ketone as a low boiling point solvent; 55 parts by weight of diethylene glycol monoethyl ether acetate; and 0.5 parts by weight of fluorosilicone resin as a release agent. The prepared solution was filtered through a 0.2 μm Millipore Teflon filter to remove insoluble material. The resulting solution was applied to a polyethylene terephthalate (PET) support film (19 μm thick) in a thickness of 5 μm to form a photoresist resin layer. A polyethylene film protective layer was applied to the photoresist resin layer, which had a thickness of 23 μm, whereby a positive type photoresist re...
Embodiment 2
[0126] A positive type photoresist resin film was prepared in the same manner as in Example 1, except that the sensitivity improving agent was 2,2',4,4'-tetrahydroxybenzophenone.
Embodiment 3
[0128] A positive photoresist resin film was prepared in the same manner as in Example 1, except that the photosensitive compound was 1,2-naphthoquinonediazide-4-sulfonyl chloride, and the sensitivity improving agent was 1-[ 1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis(4-hydroxyphenyl)ethyl]benzene).
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