Positive dry film photoresist and composition for preparing the same

A technology of photoresist and photoresist layer, which is applied in the direction of photomechanical equipment, optics, photoplate making process of pattern surface, etc., and can solve the problems of reduced resolution and sensitivity, poor pattern design, etc.

Inactive Publication Date: 2008-01-23
KOLON IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, these liquid photoresist compositions often generate insoluble material (i.e., undergo sedimentation) during storage, resulting in reduced resolution and sensitivity
For example, as disclosed in Japanese Patent Laid-Open No. 3-249654, an alkali-soluble novolak resin and a 1,2-naphthoquinonediazido-4-sulfonate-containing and acid-decomposable Composition of free radical materials; and as disclosed in Japanese Patent Laid-Open No. 6-202320, comprising alkali-soluble novolak resin, 1,2-naphthoquinonediazido-4-sulfonic acid polyhydroxybenzophenone Both ester and acid-decomposable radical compositions have problems such as loss of resolution and sensitivity due to settling during storage, poor pattern design due to residues on the coated surface, etc.

Method used

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  • Positive dry film photoresist and composition for preparing the same
  • Positive dry film photoresist and composition for preparing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0124] Prepare a solution comprising the following: cresol novolac resin as an alkali-soluble resin; all based on 100 parts by weight of the above-mentioned alkali-soluble resin, 34 parts by weight of 1,2-naphthoquinone-2-diazide-5 as a photosensitive compound -sulfonyl chloride; 3.6 parts by weight of 2,3,4-trihydroxybenzophenone as a sensitivity improving agent; 165 parts by weight of methyl ethyl ketone as a low boiling point solvent; 55 parts by weight of diethylene glycol monoethyl ether acetate; and 0.5 parts by weight of fluorosilicone resin as a release agent. The prepared solution was filtered through a 0.2 μm Millipore Teflon filter to remove insoluble material. The resulting solution was applied to a polyethylene terephthalate (PET) support film (19 μm thick) in a thickness of 5 μm to form a photoresist resin layer. A polyethylene film protective layer was applied to the photoresist resin layer, which had a thickness of 23 μm, whereby a positive type photoresist re...

Embodiment 2

[0126] A positive type photoresist resin film was prepared in the same manner as in Example 1, except that the sensitivity improving agent was 2,2',4,4'-tetrahydroxybenzophenone.

Embodiment 3

[0128] A positive photoresist resin film was prepared in the same manner as in Example 1, except that the photosensitive compound was 1,2-naphthoquinonediazide-4-sulfonyl chloride, and the sensitivity improving agent was 1-[ 1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis(4-hydroxyphenyl)ethyl]benzene).

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Abstract

A positive type photoresist resin film contains a support film and a positive photoresist resin layer laminated over the support film. The photoresist layer may be formed from a composition containing a resin, a photosensitive compound, and a first solvent having a boiling point sufficiently high such that a second solvent can be removed from the composition by heating while the first solvent is substantially retained in the composition.

Description

technical field [0001] Positive dry film photoresist (photoresist) contains at least two solvents and has excellent physical properties, such as high film speed (or photosensitive speed), development contrast, sensitivity, resolution and / or adhesion to substrate attached. Background technique [0002] Photoresists and photoresist films are used to prepare highly integrated semiconductors such as integrated circuits (ICs); printed circuit boards (PCBs) and electronic display devices such as cathode ray tubes (CRTs), color liquid crystal displays (LCDs) and organic electroluminescent displays (EL or ELD). These devices are fabricated using photolithography and photofabrication techniques. The photoresist film requires a resolution sufficient to form a pattern with very thin lines and small spatial regions of not more than 7 μm. [0003] By chemically modifying the photoresist resin or the molecular structure of the photoresist, the physical properties of the photoresist can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/022
CPCG03F7/0226G03F7/0048G03F7/0236G03F7/0045
Inventor 金炳基朴世炯卞达锡宋锡政朴钟旼
Owner KOLON IND INC
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