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Electron backscattered diffraction (EBSD) test method of crystal orientation matching relationship of nanometer zirconic acid lanthanum epitaxial layer and Ni-W substrate

A technology of electron backscattering and crystal orientation, which is applied in the direction of material analysis, measuring devices, and instruments using wave/particle radiation, and can solve problems such as easy decomposition, lower calibration rate of LZO Kikuchi pattern, and large difference in lattice constants.

Inactive Publication Date: 2010-08-25
BEIJING UNIV OF TECH
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Problems solved by technology

2. The lattice constants of LZO and Ni are quite different: aLZO=bLZO=cLZO=10.786nm; aNi=bNi=cNi=3.52nm
The internal stress introduced by lattice mismatch will significantly reduce the calibration rate of LZO Kikuchi pattern, or zero calibration will appear
3. LZO is not a good conductor, it is easy to decompose under electron beam irradiation, which will cause the surface charge of the sample to accumulate and the image to drift
4. LZO epitaxial layer sample preparation is difficult
Since the principle and method of measuring film texture by XRD are different from those of EBSD, in a pole figure of X-ray, the two-phase texture of Ni-W substrate and LZO epitaxial layer cannot be displayed at the same time, so it cannot be displayed in the pole figure. In-plane misorientation of the two phases
In addition, there is no report showing the two-phase texture of the LZO epitaxial layer and the Ni-W substrate in the EBSD pole figure.

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  • Electron backscattered diffraction (EBSD) test method of crystal orientation matching relationship of nanometer zirconic acid lanthanum epitaxial layer and Ni-W substrate

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Abstract

The invention discloses a test method of crystal orientation matching relationship of nanometer zirconic acid lanthanum epitaxial layer and Ni-W substrate, belonging to the technical field of superconducting thin film performance tests. The test method is characterized in that secondary electronic amplification factor is adjusted and stepping distance is scanned in a system of thermal field emission scanning electron microscope SEM-electron backscattered diffractometer (EBSD), so that 5nA incidence election current can realize that the zirconic acid lanthanum epitaxial layer and Ni-W substrate texture are simultaneously displayed in one polar diagram under the condition that the lowest accelerating voltage is 6kV; one Kikuchi pattern comprises a zirconic acid lanthanum epitaxial layer and Ni-W substrate double phases; on the basis, commercial EBSD analysis software is adopted to measure the crystal orientation matching relationship of the zirconic acid lanthanum epitaxial layer and the Ni-W substrate in the growth directions of in-plane and epitaxial (c-axis). The method is visual and simple, does not need to perform surface pretreatment on the zirconic acid lanthanum and is suitable for other epitaxial material systems.

Description

Electron Backscatter Diffraction (EBSD) Testing Method of Crystal Orientation Matching Relationship between Nanometer Lanthanum Zirconate Epitaxial Layer and Ni-W Substrate technical field The present invention uses electron backscatter diffraction (EBSD) technology to test the texture and crystal matching relationship between lanthanum zirconate (La2Zr2O7, LZO) nano-epitaxial layer and Ni-W substrate, and realizes a pole figure or a Kikuchi in EBSD In the pattern, the orientation matching relationship between the LZO epitaxial layer and the Ni-W substrate is directly displayed and determined. Background technique Lanthanum zirconate (La2Zr2O7, LZO) is a fluorite or pyrochlore-type composite oxide material, which is widely used in the fields of catalysts, optical materials and superconducting materials. As the transition layer of yttrium barium copper oxide (YBCO) superconducting thin film, LZO can be prepared by various physical and chemical methods. It has the following...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/207G01N23/225
Inventor 吉元王丽张隐奇卫斌
Owner BEIJING UNIV OF TECH
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