The invention relates to recombination
doping zirconic acid
lanthanum proton conductor material and its preparation method. Its
chemical formula and matching is: La2-yNyZr2-xMxO7-
delta;M is that Yb3+,Er3+,Gd3+,Sc3+ are
doping in Zr bit, x is 0.01-1;N is Sr2+,Ca2+ are
doping in La bit, y is 0.002-0.4;
delta is
oxygen vacant site, it depends on x and y. Dosage as proportion, water or
alcohol is the medium, it is ball grinded and mixed for 4-10 hours and then dried, then synthesized in 1400DEG C, heat preserved for 2-20 hours. The synthesized material is then ball grinded, dried, screened, and loaded into die. The pressure is 50-120MPa, it is isostatic pressing, the pressure is 120-300MPa;it is adglutinated in 1400-1650DEG C, the warming-up rate is 2-10DEG C / minute, heat preserved for 2-50 hours, then cooled to
room temperature, the doping zirconic acid
lanthanum material is produced. The invention adopts the recombination doping which is not reported to produce
proton conductor material which possesses perfect
conductivity; it lays the foundation of developing
hydrogen gas and steam sensor,
hydrogen pump,
accelerant and
concentration cell electrolyte material.