The invention relates to recombination doping zirconic acid lanthanum proton conductor material and its preparation method. Its chemical formula and matching is: La2-yNyZr2-xMxO7-delta;M is that Yb3+,Er3+,Gd3+,Sc3+ are doping in Zr bit, x is 0.01-1;N is Sr2+,Ca2+ are doping in La bit, y is 0.002-0.4;delta is oxygen vacant site, it depends on x and y. Dosage as proportion, water or alcohol is the medium, it is ball grinded and mixed for 4-10 hours and then dried, then synthesized in 1400DEG C, heat preserved for 2-20 hours. The synthesized material is then ball grinded, dried, screened, and loaded into die. The pressure is 50-120MPa, it is isostatic pressing, the pressure is 120-300MPa;it is adglutinated in 1400-1650DEG C, the warming-up rate is 2-10DEG C/ minute, heat preserved for 2-50 hours, then cooled to room temperature, the doping zirconic acid lanthanum material is produced. The invention adopts the recombination doping which is not reported to produce proton conductor material which possesses perfect conductivity; it lays the foundation of developing hydrogen gas and steam sensor, hydrogen pump, accelerant and concentration cell electrolyte material.