Ferroelectric photovoltaic device and preparation method of ferroelectric photovoltaic device

Abstract

The invention discloses a ferroelectric photovoltaic device which comprises an upper electrode, a lower metal electrode and a ferroelectric material between the two electrodes. The ferroelectric material is lead lanthanum zirconate titanate (PLZT), lead zirconate titanate (PZT), barium titanate (BTO) or bismuth ferrite oxide (BFO), etc., the upper electrode is made of a transparent electrode material such as indium tin oxide (ITO) or aluminum doped zinc oxide (AZO), and the lower metal electrode is made of the metal with a low work unction such as Ag, Al or Mg. The invention also discloses a preparation method of the ferroelectric photovoltaic device. According to the invention, the photovoltaic characteristic of this kind of ferroelectric photovoltaic device can be improved through material design and energy band engineering based on the photoelectric effect of the metal with the low work function and the photovoltaic effect of the ferroelectric material; the light response wavelength of the traditional broad-band gap ferroelectric photovoltaic device can be extended from the range of ultraviolet light to the range of visible light; and the application field of the ferroelectric photovoltaic device can be enlarged.

Description

technical field [0001] The invention belongs to the field of photoelectric conversion and photovoltaic technology, and in particular relates to a ferroelectric photovoltaic device and a preparation method thereof. Background technique [0002] The photovoltaic effect of ferroelectric materials has been discovered in the 1960s and 1970s, and this type of device is widely used in the fields of photoelectric detection and photoelectric energy conversion. Studies have shown that ferroelectric materials will produce a bulk photovoltaic effect (Bulk photovoltaic effect) under light, that is, the photovoltaic effect exists in the entire material, and the open circuit voltage of the device (V oc ) has a certain proportional relationship with the thickness, and can reach a higher value. In contrast, semiconductor pn junction devices usually used in photoelectric conversion and photodetection, the photovoltaic effect is mainly generated in the junction region with a thickness of seve...

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Problems solved by technology

However, noble metals such as Pt and Au usually have a higher work function, which will form a higher Schottky barrier at the metal/PLZT interface, thereby hindering the injection of excited electrons in the metal into the PLZT. Although the device has a very high photogenerated voltage, the photocurrent is extremely low

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