Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as preparation method and application thereof

A strontium zirconium titanate lead lanthanum titanate and antiferroelectric technology, which is applied in the field of strontium zirconium zirconium titanate lead lanthanum lead titanate relaxant antiferroelectric thick film ceramics and their preparation, can solve problems such as low energy density and achieve high The effect of energy storage density, good energy storage efficiency and high energy storage efficiency

Inactive Publication Date: 2020-07-31
GUANGDONG UNIV OF TECH
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ferroelectric materials generally have high dielectric constants, but large remnant polarization limits the energy density of ferroelectric materials to low values

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as preparation method and application thereof
  • Strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as preparation method and application thereof
  • Strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035]1. PbO (excessive 3wt%), La 2 o 3 , ZrO 2 , SnO 2 , SrCO 3 、TiO 2 Put it in a nylon ball mill jar (250mL), the ball milling medium is zirconia balls (ball diameters are 3mm and 5mm, mass ratio is about 1:1); add 20mL of ethanol, use ordinary planetary ball mill for ball milling, set the speed at 240rmp / min, ball mill The time is 24h, and the mixed powder is obtained.

[0036] 2. Dry the mixed powder in an oven at 60°C for 10 hours, and pass through 40-mesh and 80-mesh sieves to obtain ceramic powder;

[0037] 3. Pre-fire the ceramic powder in a muffle furnace at 950°C for 2 hours. The obtained product is ball-milled with an ordinary planetary ball mill, the speed is set at 240rmp / min, the ball milling time is 24h, and it is dried in an oven at 60°C for 10h. Sieve through 40 mesh and 80 mesh to obtain ceramic powder.

[0038] 4. Preparation of casting slurry: put the obtained ceramic powder (about 50g) in a tumbler, add 0.9g of dispersant (octylphenol polyoxyethyle...

Embodiment 2

[0042] The difference from Example 1 is that strontium-doped zirconium-titanium-lanthanum-lead thick-film ceramics are prepared. The chemical composition is Pb 0.85 Sr 0.09 La 0.06 (Zr 0.45 sn 0.50 Ti 0.05 )O 3 , (PLZST marked as A 2 ).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Grain sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of dielectric materials, and discloses a strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick-film ceramic as well as a preparation method and application thereof. The molecular formula of the thick-film ceramic is PbxSryLaz(ZrnSnmTiv)O3, and x is equal to 0.85 to 0.88, y is equal to 0.06 to 0.09, z is equal to 0.06, n is equal to 0.45 to 0.8, m is equal to 0.15 to 0.5, and v is equal to 0.05. The thickness of a strontium-doped lead lanthanum zirconate stannate titanate relaxed anti-ferroelectric thick film prepared by a tape casting process is controllable, the thickness of a single layer is 40-50 microns, and the number of overlapped layers reach 500-1000. The thick-film ceramic is good and uniform in compactness and has a good energy storage performance and energy storage efficiency, the energy storage density of the thick-film ceramic can reach 3.7-3.9 J / cm<3>, the energy storage efficiency of the thick-film ceramic is higher than 89.5%, and the thick-film ceramic has good application prospects in capacitors with zirconium energy storage density.

Description

technical field [0001] The invention belongs to the technical field of dielectric materials, and in particular relates to a relaxant antiferroelectric thick film ceramic doped with strontium zirconium titanium lanthanum stannate and its preparation method and application. Background technique [0002] With the increasing demand for sustainable high-power energy storage systems, the development of advanced energy storage materials and related technologies is the research focus of high-performance energy storage devices. Batteries and capacitors are two types of devices currently used primarily for energy storage and conversion. Batteries convert electrical energy into chemical energy and usually have a higher energy density (about 100Wh kg -1 ). However, due to the slow movement of the carriers involved, the output power of the battery is usually limited. For many practical applications, such as pulsed power system hybrids, powered vehicles, medical equipment, etc., not on...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/493C04B35/622H01G4/12H01G4/33
CPCC04B35/493C04B35/62218H01G4/1245H01G4/33C04B2235/3293C04B2235/3227C04B2235/3213C04B2235/656
Inventor 鲁圣国赵鹏飞王世斌姚丽丽
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com