Lanthanum zirconic acid/yttrium titanate film material and method for making same

Abstract

The invention discloses a Lanthanum zirconate / titanate Y film material and the preparation method of the Lanthanum zirconate / titanate Y film material. The material is the metal nickel of (100) axial orientation or the nickel alloy base covered in sequence with a Lanthanum zirconate seed layer of the (100) axial orientation, a Lanthanum zirconate layer of the (100) axis orientation, a titanate Y seed layer of (100) axial orientation and a titanate Y film of (100) axial orientation. In the preparation, according to the mol ratios of la: zieconim 1:1 and Y:Ti 1:1, the precursor colloid of the Lanthanum zirconate seed layer and the precursor colloid of the follow up layer of the Lanthanum zirconate seed layer are firstly respectively prepared. And then the metal nickel of (100) axial orientation or the nickel alloy base is coated in sequence with the above precursor colloid, which is also respectively and successively under the heat of 300 to 450 DEG C. for 15 to 30 minutes and in annealing under 850 to 1150 DEG C.for more than 15 minutes in a reduction atmosphere. Thus the Lanthanum zirconate / titanate Y film materal is produced. The material has high (100) axial orientation, which can be widely applied in catalysts, optical materials, superconducting materials and other fields.

Description

technical field [0001] The invention relates to a film material and a preparation method, in particular to a lanthanum zirconate / yttrium titanate film material and a preparation method thereof. Background technique [0002] Dielectric materials such as lanthanum zirconate and yttrium titanate have broad application prospects in catalysts, optical materials and superconducting materials. People have made various attempts and efforts to obtain them, as disclosed on May 25, 2006 A "Topological Anion Exchange Oxide Thin Film and Its Preparation Method" disclosed in US 2006 / 0107891A1 of the United States Invention Patent Application Publication. It intends to provide an oxide film product and its preparation method. Oxide film products are coated with multi-layer oxides on the silicon substrate, and the oxide contains lanthanum zirconate; the preparation method adopts the ion exchange method, and the process steps are to grow a nitride film on the silicon substrate first, and th...

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Problems solved by technology

However, this oxide film product and its preparation method all have shortcomings. First, the oxide film product is not a lanthanum zirconate / yttrium titanate film material, especially not a highly (100) axis-oriented lanthanum zirconate / titanium Yttrium acid thin film material, more does not possess the excellent performance of highly (100) axis-oriented lanthanum zirconate / yttrium titanate thin film material; Secondly, the preparation method can not prepare highly (100) axis-oriented lanthanum zirconate / yttrium titanate Thin film materials, because metal non-oxide salts such as nitrides are used as precursor materials, and these metal non-oxide precursor materials need to be prepared in a vacuum, and high-temperature denitrification treatment is required, so that the process is too complicated. Defects that are complicated and difficult to reduce manufacturing costs

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