Inorganic perovskite light-absorbing material and preparation method thereof

A light-absorbing material, inorganic calcium technology, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as difficult to prepare high-quality thin films

Inactive Publication Date: 2017-07-14
INNER MONGOLIA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[KNbO 3 ] 1-x [BaNi 0.5 Nb 0.5 o 3-d ] x The complex compo

Method used

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  • Inorganic perovskite light-absorbing material and preparation method thereof
  • Inorganic perovskite light-absorbing material and preparation method thereof
  • Inorganic perovskite light-absorbing material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039](1) With the nitrate of the raw material, La(NO 3 ) 3 , a ratio of Y(NO 3 ) 3 , b proportion of Dy(NO 3 ) 3 , d proportion of Er(NO 3 ) 3 , 0.5 ratio of Co(NO 3 ) 2 and 0.5 ratio of Mn(NO 3 ) 3 respectively dissolved in water, c / 2 ratio of Bi 2 o 3 Dissolve in nitric acid, stir well, prepare (La 1-a-b-c-d Y a Dy b Bi c Er d )Co 0.5 mn 0.5 o 3 The precursor solution;

[0040] (2) In the solution, add citric acid in a ratio of 1:1.5 of the mass ratio of nitrate raw material and citric acid in (1), and stir with a magnetic stirrer for 30 minutes;

[0041] (3) In (2) sol, add ethylene glycol with the volume ratio of solution and ethylene glycol 1: 0.8 ratio, make sol-gel, stir with magnetic stirrer for 30 minutes;

[0042] (4) Spin-coating on an In-doped ZnO substrate;

[0043] (5) drying the nitrate spin-coated film of (4) deposited on an In-doped ZnO substrate in an oven at 100° C. for 24 hours;

[0044] (6) heat-treat the dried (5) in a box furnace ...

Embodiment 2

[0052] (1) With the nitrate of the raw material, La(NO 3 ) 3 , a ratio of Y(NO 3 ) 3 , b proportion of Dy(NO 3 ) 3 , d proportion of Er(NO 3 ) 3 , 0.5 ratio of Ni(NO 3 ) 2 and 0.5 ratio of Mn(NO 3 ) 3 respectively dissolved in water, c / 2 ratio of Bi 2 o 3 Dissolve in nitric acid, stir well, prepare (La 1-a-b-c-d Y a Dy b Bi c Er d ) Ni 0.5 mn 0.5 o 3 The precursor solution;

[0053] (2) In the solution, add citric acid in a ratio of 1:1.5 of the mass ratio of nitrate raw material and citric acid in (1), and stir with a magnetic stirrer for 30 minutes;

[0054] (3) In (2) sol, add ethylene glycol with the volume ratio of solution and ethylene glycol 1: 0.8 ratio, make sol-gel, stir with magnetic stirrer for 30 minutes;

[0055] (4) Spin-coating on an In-doped ZnO substrate;

[0056] (5) drying the nitrate spin-coated film of (4) deposited on an In-doped ZnO substrate in an oven at 100° C. for 24 hours;

[0057] (6) heat-treat the dried (5) in a box furnac...

Embodiment 3

[0064] (1) With the nitrate of the raw material, La(NO 3 ) 3 , a ratio of Y(NO 3 ) 3 , b proportion of Dy(NO 3 ) 3 , d proportion of Er(NO 3 ) 3 , 0.5 ratio of Cr(NO 3 ) 2 and 0.5 ratio of Mn(NO 3 ) 3 respectively dissolved in water, c / 2 ratio of Bi 2 o 3 Dissolve in nitric acid, stir well, prepare (La 1-a-b-c-d Y a Dy b Bi c Er d )Cr 0.5 mn 0.5 o 3 The precursor solution;

[0065] (2) In the solution, add citric acid in a ratio of 1:1.5 of the mass ratio of nitrate raw material and citric acid in (1), and stir with a magnetic stirrer for 30 minutes;

[0066] (3) In (2) sol, add ethylene glycol with the volume ratio of solution and ethylene glycol 1: 0.8 ratio, make sol-gel, stir with magnetic stirrer for 30 minutes;

[0067] (4) Spin-coating on an In-doped ZnO substrate;

[0068] (5) drying the nitrate spin-coated film of (4) deposited on an In-doped ZnO substrate in an oven at 100° C. for 24 hours;

[0069] (6) heat-treat the dried (5) in a box furnace...

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Abstract

The invention discloses an inorganic perovskite light-absorbing material (La<1-a-b-c-d>YDyBi<c>Er<d>)M<0.5>Mn<0.5>O<3> and a preparation method thereof. The preparation method comprises the following steps: preparing a precursor solution; (2) preparing sol-gel; (3) coating a bottom electrode with the sol-gel, placing the bottom electrode into a drying oven at the temperature of 90 to 110 DEG C for drying, and keeping the temperature at 600 to 1,000 DEG C for thermal treatment; and (4) preparing an indium-doped zinc oxide electrode on an upper surface of deposited sol-gel. Through adoption of the preparation method, the (La<1-a-b-c-d>YDyBi<c>Er<d>)M<0.5>Mn<0.5>O<3> is prepared by a sol-gel method, and a highly-stable lead-free perovskite solar light-absorbing material layer of which a band gap width is adjustable between 1.3eV and 2.2eV is prepared on a Nb-doped SrTiO<3> substrate. Short-circuit current is between 5 and 7.55mA/cm<2>, and an open-circuit voltage is between 0.24 to 0.55V. The material has the characteristics of simple preparation process, high chemical stability, freeness from environmental pollution elements, and band gap width being adjustable in a relatively large range; the power conversion efficiency can be approximate to 8 percent; and other photovoltaic absorbing layer materials are effectively supplemented and adjusted.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to an inorganic perovskite light-absorbing material and a preparation method thereof. Background technique [0002] In solar cells, solar light-absorbing materials play a key role in absorbing sunlight and separating electron-hole pairs. Since 2009, perovskite light-absorbing materials have been applied to solar cells. Among them, the development of Pb-based perovskite solar cells is relatively rapid. The perovskite solar cells certified by the National Renewable Energy Laboratory (NREL) The conversion efficiency has reached 20.1%, that is, Cu(In, Ga)Se 2 The level of thin film solar cells, and far beyond the monocrystalline silicon / polycrystalline silicon cells and dye-sensitized cells. The light-absorbing layer of a typical perovskite cell is an organic lead halide perovskite material, and its organic components at the A crystal site have the disadvantage of bein...

Claims

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Application Information

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IPC IPC(8): H01L31/0264H01L31/0296H01L31/042H01L31/18
CPCH01L31/0264H01L31/02963H01L31/042H01L31/18Y02E10/50Y02P70/50
Inventor 常虹刘芳高玉董晓玲刘奕帆
Owner INNER MONGOLIA UNIVERSITY
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