178results about "Group 5/15 organic compounds without C-metal linkages" patented technology

A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

Polyoxometalate topical compositions for removing contaminants from an environment and methods of use thereof are disclosed. An embodiment of the polyoxometalate topical composition includes a topical carrier and at least one polyoxometalate, with the proviso that the polyoxometalate is not H₅PV₂Mo₁₀O₄₀; K₅Si(H₂O)Mn^IIIW₁₁O₃₉; K₄Si(H₂O)Mn^IVW₁₁O₃₉; or K₅Co^IIIW₁₂O₄₀. Another embodiment relates to a method for removing a contaminant from an environment, including contacting the polyoxometalate topical composition with the environment containing the contaminant for a sufficient time to remove the contaminant from the environment. An additional embodiment relates to a modified material for removing a contaminant from an environment, wherein the modified material includes (1) a material comprising a topical carrier, a powder, a coating, or a fabric, and (2) a metal compound including a transition metal compound, an actinide compound, a lanthanide compound, or a combination thereof, wherein the metal compound is not a polyoxometalate.

Metalorganic precursors of the formula:

(R₁R₂N)_a-bMX_b

wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a-1); R₁ and R₂ can be the same as or different from one another, and are each independently selected from the group of H, C₁-C₄ alkyl, C₃-C₆ cycloalkyl, and R^O₃Si, where each R⁰ can be the same or different and each R⁰ is independently selected from H and C₁-C₄ alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si₃N₄ on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).

Tantalum compositions of Formulae I-V hereof are disclosed, having utility as precursors for forming tantalum-containing films. The tantalum compositions are amenable to usage involving chemical vapor deposition and atomic layer deposition processes, to form semiconductor device structures, including a dielectric layer, a barrier layer overlying the dielectric layer, and copper metallization overlying the barrier layer, wherein the barrier layer includes a Ta-containing layer including sufficient carbon so that the Ta-containing layer is amorphous. In one preferred implementation, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including a Ta alkylidene compound, at a temperature below 400° C., in a reducing or inert atmosphere.

Methods of forming metal alkoxides and methods of forming precursor solutions of metal alkoxides suitable for the coating of glass in the manufacture of electrochromic devices are disclosed. The method of forming metal alkoxides involves dissolving the metal halide in an anhydrous solvent and reacting it with an alcohol and (together with the addition of the alcohol or subsequently) adding an epoxide, and then evaporating-off the volatile components of the reaction product to leave a solid metal alkoxide that is substantially free of halide. The alkoxide may then be dissolved in a solvent including an alcohol (preferably ethanol) containing a small proportion of water to produce a precursor solution suitable for coating glass, the coating then being hydrolyzed to form a sol-gel and then baked to remove volatile components and to yield a thin layer of metal oxide.

The disclosure provides for catalytic multivariate metal organic frameworks and methods of use thereof.

A naphthalocyanine dye of formula (I) is provided:

wherein M is a metal group or is absent;

• R¹ and R² are independently selected from hydrogen or C_1-12 alkoxy; X is selected from O, S or —NH—;
• Ar¹, Ar², Ar³, Ar⁴, Ar⁵, Ar⁶, Ar⁷ and Ar⁸ are selected from phenyl, naphthyl, pyridyl, furanyl, pyrollyl, thiophenyl, each of Ar¹, Ar², Ar³, Ar⁴, Ar⁵, Ar⁶, Ar⁷ and Ar⁸ being optionally substituted with 1, 2, 3, 4 or 5 groups, the or each group being independently selected from C_1-12 alkyl, C_1-12 alkoxy, C_1-12 arylalkyl, C_1-12 arylalkoxy, —(OCH₂CH₂)_dOR^d, cyano, halogen, amino, hydroxyl, thiol, —SR^v, —NR^uR^v, nitro, phenyl, phenoxy, —CO₂R^v, —C(O)R^v, —OCOR^v, —SO₂R^v, —OSO₂R^v, —NHC(O)R^v, —CONR^uR^v, —CONR^uR^v, sulfonic acid, sulfonic acid salt and sulfonamide; d is an integer from 2 to 5000;
• R^d is H, C_1-8 alkyl or C(O)C_1-8 alkyl; and
• R^u and R^v are independently selected from hydrogen, C_1-12 alkyl, phenyl or phenyl-C_1-8 alkyl. Dyes of this type are especially suitable for use in netpage and Hyperlabel™ systems.

Chiral ligands and transition metal complexes based on such chiral ligands useful in asymmetric catalysis are disclosed. The chiral ligands include phospholanes, P,N ligands, N,N ligands, biphenols, and chelating phosphines. The ferrocene-based irridium (R,R)-f-binaphane complex reduces imines to the corresponding amines with 95-99.6% enantioselectivity and reduces beta-substituted-alpha-arylenamides with 95% enantioselectivity. The transition metal complexes of the chiral ligands are useful in asymmetric reactions such as asymmetric hydrogenation of imines, asymmetric hydride transfer reactions, hydrosilylation, hydroboration, hydrovinylation, hydroformylation, allylic alkylation, cyclopropanation, Diels-Alder reaction, Heck reaction, isomerization, Aldol reaction, Michael addition and epoxidation reactions.

Olefins, such as ethylene, are polymerized using as a polymerization catalyst a complex of a selected transition metal with a monoanionic ligand that has at least three atoms that may coordinate to the transition metal. Also disclosed are the above selected transition metal complexes, and intermediates thereto.

This invention relates to a one pot method for large scale production of an organometallic compound comprising (i) reacting a hydrocarbon or heteroatom-containing material with a base material in the presence of a solvent and under reaction conditions sufficient to produce a first reaction mixture comprising a hydrocarbon or heteroatom-containing compound, (ii) adding a metal source compound to said first reaction mixture, (iii) reacting said hydrocarbon or heteroatom-containing compound with said metal source compound under reaction conditions sufficient to produce a second reaction mixture comprising said organometallic compound, and (iv) separating said organometallic compound from said second reaction mixture.

A mixed metal-containing precursor is disclosed whereby the precursor includes: a) a mixed metal component represented by the following formula: (M1M2)x(T1T2)y where M1 and M2 may be the same or different and are selected from one or more metals having a +2 oxidation state, T1 and T2 may be the same or different and are selected from one or more metals having oxidation states selected from the groups consisting of +3, +4, and +5, the molar ratio of x/y is from about 2.5 to about 3.75, with the proviso that if M1 and M2 are both Mg then T1 and T2 cannot both be chosen from Zr and Ti+4; and b) at least one moiety complexed with component a) selected from alkoxide groups, phenoxide groups, halides, hydroxy groups, carboxyl groups, amide groups, and mixtures thereof. A polymerization procatalyst prepared from the mixed metal containing precursor, methods of making the precursor and procatalyst, as well as polymerization methods using the procatalyst also are disclosed.

Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described:

wherein M stands for Nb or Ta,

• R¹ and R² mutually independently denote optionally substituted C₁ to C₁₂ alkyl, C₅ to C₁₂ cycloalkyl, C₆ to C₁₀ aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR₃, or amino radicals NR₂ where R═C₁ to C₄ alkyl,
• R³ denotes an optionally substituted C₁ to C₈ alkyl, C₅ to C₁₀ cycloalkyl, C₆ to C₁₄ aryl radical, or SiR₃ or NR₂,
• R⁴ denotes halogen from the group comprising Cl, Br, I, or NH—R⁵ where R⁵═optionally substituted C₁ to C₈ alkyl, C₅ to C₁₀ cycloalkyl or C₆ to C₁₀ aryl radical, or O—R⁶ where R⁶=optionally substituted C₁ to C₁₁ alkyl, C₅ to C₁₀ cycloalkyl, C₆ to C₁₀ aryl radical, or —SiR₃, or BH₄, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR′R″ (hydrazido(−1), wherein R, R′ and R″ have the aforementioned meaning of R, or CH₂SiMe₃, pseudohalide (e.g. —N₃), or silylamide —N(SiMe₃)₂,
• R⁷ and R⁸ mutually independently denote H, optionally substituted C₁ to C₁₂ alkyl, C₅ to C₁₂ cycloalkyl or C₆ to C₁₀ aryl radicals.

This invention provides a novel class of substituted macrocyclic metallic complexes. The complexes are useful as peroxynitrite decomposition catalysts. Pharmaceutical compositions, and methods of making and using the compounds, or a pharmaceutically acceptable salt, hydrate, prodrug, or mixture thereof are also described.

The invention provides olefin polymerization catalyst exhibiting excellent polymerization activities, a process for olefin polymerization using the catalyst, a novel transition metal compound useful for the catalyst, and an alpha-olefin/conjugated diene copolymer having specific properties. The olefin polymerization catalyst of the invention comprises (A) a transition metal compound of formula (I) or (II), and (B) an organometallic compound, an oranoaluminum oxy-compound or an ionizing ionic compound. The novel transition metal compound of the invention is a compound of formula (I) wherein M is a transition meal atom of Group 3 or 4 of the periodic table; m is an integer of 1 to 3; R1 is a hydrocarbon group, etc.; R2 to R5 are each H, a halogen, a hydrocarbon group, etc.; R6 is a halogen, a hydrocarbon group, etc.; n is a number satisfying a valence of M; and X is a halogen, a hydrocarbon group, etc.

The invention relates to a mixed-valence hexavanadate alkoxyl derivative and a preparation method thereof and belongs to the technical field of organic-inorganic hybrid materials. According to the structure of the alkoxyl derivative, three bridging oxygen atoms arranged to form a planar triangle on a Linqivist hexavanadate framework are substituted by three hydroxyl oxygens of a tri-hydroxymethyl compound molecule, three tri-hydroxymethyl compounds are adjacently distributed on the hexavanadate framework, and all vanadium is tetravalent vanadium or tetravalent and pentavalent vanadium distributed in a mixed mode. The tri-hydroxymethyl compounds are tri-hydroxymethyl aminomethane, pentaerythritol, trimethylolethane or trimethylolpropane. The tri-substituted hexavanadate alkoxyl derivative and a post-modification product thereof possibly have unique magnetism, catalytic activity and other properties. The properties make them have unique advantages on the aspect of the organic-inorganic hybrid materials rich in construction structure and property.