Production method for nanometer indium oxide

A nano-indium oxide and production method technology, applied in the field of materials, can solve the problems of unfavorable acquisition of high-density targets, low sintering activity, and wide particle size distribution range of indium oxide powder, achieving narrow particle size distribution range, good dispersion, and The effect of not easy to reunite

Active Publication Date: 2016-08-10
LUOYANG RUIDE MATERIAL TECH SERVICES CO LTD
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the produced indium oxide powder has a wide particle size distribution range, low sintering activity, and is not conducive to obtaining high-density targets, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production method for nanometer indium oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Take 20ml of analytically pure formic acid with a content of 85%, 30ml of distilled water, and 10ml of analytically pure hydrogen peroxide with a content of 30%, and mix them to prepare a 60ml solution; add 20 grams of indium particles with a particle size of not more than 1mm and a purity of 5N to the above solution, and heat to 40 °. After the reaction is completed and cooled, the unreacted indium is taken out to obtain an indium formate solution. Then, add analytically pure ethanol with a content of 95% to the indium formate solution, stir and mix evenly, the solution gradually produces a white precipitate, and after standing for 0.5 hours, filter and separate the precipitate, put it in an oven and dry it at 120 ° for 6 hours, Then put it into an electric furnace and roast at 700° for 2 hours to obtain 10.2 g of indium oxide powder, the particles are spherical and the particle size is 20-50 nanometers.

Embodiment 2

[0037]Take 20ml of analytically pure peracetic acid with a content of 85% and 40ml of distilled water, mix and prepare a 60ml solution; add 20 grams of indium particles with a particle size not greater than 1mm and a purity of 5N to the above solution, and heat to 30°. After the reaction is completed and cooled, the unreacted indium is taken out to obtain an indium acetate solution. Then, add analytically pure ethanol with a content of 95% to the indium acetate solution, stir and mix evenly, the solution gradually produces a white precipitate, and after standing for 0.5 hours, filter and separate the precipitate, put it in an oven and dry it at 120 ° for 6 hours, Then put it into an electric furnace and roast at 700° for 2 hours to obtain 8.6 g of indium oxide powder, the particles are spherical and the particle size is 30-70 nanometers.

[0038] The invention realizes the goals of small and round indium oxide powder particles, uniform particle size, narrow particle size distr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
purityaaaaaaaaaa
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a production method for nanometer indium oxide, and relates to the field of materials. According to the method, by a method of completely adopting an organic solvent, the problem of high water consumption and wastewater discharge caused by a method of dissolving metal indium by adopting an inorganic acid solvent is solved; a precursor indium hydroxide is obtained in a mixed solution environment of the organic solvent and water, so that indium oxide powder particles are fine, round, normal, uniform in particle size, narrow in granularity distribution range, unlikely to be agglomerate and high in dispersibility, and can be used for producing a high-density target. The method has the characteristics that a production process is high in environment friendliness and low in wastewater discharge and a product is uniform in granularity and high in dispersibility.

Description

【Technical field】 [0001] The invention relates to the field of materials, in particular to a production method of nanometer indium oxide. 【Background technique】 [0002] It is known that transparent conductive films have been widely used in electronic display screens, touch screens, solar cells and other fields, and the main raw material used for the sputtering target is indium oxide powder. Nano, spherical, and well-dispersed powders are conducive to the manufacture of desired high-density targets. [0003] The neutralization precipitation method is a kind of indium oxide powder manufacturing method widely used by those skilled in the art at present, that is, the inorganic acid salt solution of indium, such as indium chloride aqueous solution, indium nitrate aqueous solution, indium sulfate aqueous solution, etc., is mixed with alkaline solution such as ammonia water The aqueous solution is neutralized to form indium hydroxide precipitate, and then dried and calcined to ob...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00B82Y40/00
CPCC01G15/00C01P2004/03C01P2004/32C01P2004/64
Inventor 陈志强
Owner LUOYANG RUIDE MATERIAL TECH SERVICES CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap